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1. 发明申请

WO2011056550A1 CHEMICAL VAPOR DEPOSITION COATING, ARTICLE, AND METHOD 审中-公开
标题翻译：化学蒸气沉积涂料，文章和方法
公开(公告)号：WO2011056550A1
公开(公告)日：2011-05-12
申请号：PCT/US2010/054058
申请日：2010-10-26
申请人： SILCOTEK CORP. , SMITH, David A. , MATTZELA, James B. , SILVIS, Paul H. , BARONE, Gary A.
发明人： SMITH, David A. , MATTZELA, James B. , SILVIS, Paul H. , BARONE, Gary A.
IPC分类号： C23C16/32 , C23C16/56 , B05D7/24
CPC分类号： C23C16/325 , B05D1/60 , B05D2202/15 , C23C8/10 , C23C16/56 , Y10T428/24802
摘要： The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.
摘要翻译：本发明涉及化学气相沉积涂层，化学气相沉积制品和化学气相沉积方法。涂层，制品和方法涉及二甲基硅烷的热分解以达到所需的表面性能。

2. 发明申请

WO2012047945A3 WEAR RESISTANT COATING, ARTICLE, AND METHOD 审中-公开
公开(公告)号：WO2012047945A3
公开(公告)日：2012-04-12
申请号：PCT/US2011/054835
申请日：2011-10-05
申请人： SILCOTEK CORP. , SMITH, David A. , MATTZELA, James B. , SILVIS, Paul H. , BARONE, Gary A. , HIGGINS, Martin E.
发明人： SMITH, David A. , MATTZELA, James B. , SILVIS, Paul H. , BARONE, Gary A. , HIGGINS, Martin E.
IPC分类号： C23C16/02 , C23C16/18 , C23C16/40 , C23C16/56 , C23C30/00 , C23C16/30
摘要： A wear coating is disclosed that includes a layer treated by a trifunctional organosilane. An article is also disclosed, the article having a surface to which the wear coating is applied. A method of applying the wear coating is also disclosed. In some embodiments, the organosilane is trimethylsilane and the wear coating is applied by chemical vapor deposition, followed by heat treating the wear coating in the presence of the trimethylsilane.

3. 发明申请

WO2017040623A1 THERMAL CHEMICAL VAPOR DEPOSITION COATING 审中-公开
标题翻译：热化学蒸气沉积涂料
公开(公告)号：WO2017040623A1
公开(公告)日：2017-03-09
申请号：PCT/US2016/049647
申请日：2016-08-31
申请人： SILCOTEK CORP.
发明人： VEZZA, Thomas F. , MATTZELA, James B. , BARONE, Gary A. , GROVE, William David , SILVIS, Paul H.
IPC分类号： C23C16/24 , C23C16/455
CPC分类号： C23C16/24 , C23C16/45523
摘要： Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The thermal chemical vapor deposition coated article includes a substrate and a coating on the substrate, the coating having multiple layers and being positioned on regions of the thermal chemical vapor deposition coated article that are unable to be concurrently coated through line-of-sight techniques. The coating has a concentration of particulate from gas phase nucleation, per 100 square micrometers, of fewer than 6 particles having a dimension of greater than 0.5 micrometers. The thermal chemical vapor deposition process includes introducing a multiple aliquot of a silicon-containing precursor to the enclosed vessel with intermediate gaseous soaking to produce the coated article.
摘要翻译：公开了热化学气相沉积涂覆制品和热化学气相沉积工艺。热化学气相沉积涂覆制品包括基材和基材上的涂层，涂层具有多层并且位于不能通过视线技术同时涂覆的热化学气相沉积涂覆制品的区域上。该涂层具有每100平方微米气相成核的少于6个尺寸大于0.5微米的颗粒的颗粒浓度。热化学气相沉积工艺包括使用中间气体浸泡将含有硅的前体的多重等分试样引入封闭的容器中以产生涂覆制品。

4. 发明申请

WO2020252306A1 NANO-WIRE GROWTH 审中-公开
公开(公告)号：WO2020252306A1
公开(公告)日：2020-12-17
申请号：PCT/US2020/037489
申请日：2020-06-12
申请人： SILCOTEK CORP.
发明人： YUAN, Min , DESKEVICH, Nicholas Peter , BISCHOF, Jesse , VEZZA, Thomas F. , MATTZELA, James B. , BARONE, Gary A. , SMITH, David A. , WHITE, Geoffrey K.
IPC分类号： C30B25/18 , C30B29/10 , C30B29/60 , C30B33/00
摘要： Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

5. 发明申请

WO2021076471A1 COLD THERMAL CHEMICAL VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2021076471A1
公开(公告)日：2021-04-22
申请号：PCT/US2020/055322
申请日：2020-10-13
申请人： SILCOTEK CORP.
发明人： WHITE, Geoffrey K. , DESKEVICH, Nicholas P. , MATTZELA, James B. , BARONE, Gary A. , SMITH, David A. , LECLAIR, Pierre A. , YUAN, Min , BISCHOF, Jesse
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/52
摘要： Cold thermal chemical vapor deposition coatings, articles, and processes are disclosed. Specifically, a cold thermal chemical vapor deposition process includes positioning an article, heating a precursor gas to at least a decomposition temperature of the precursor gas to produce a deposition gas, introducing the deposition gas to a coating vessel, and depositing a coating from the deposition gas onto the article within the coating vessel. The article remains at a temperature below the decomposition temperature throughout the introducing and depositing of the deposition gas. The coating on the article has a gradient formed by the depositing of the coating having no flow for a period of time. The coated article includes a thermally-sensitive substrate (the thermally-sensitive substrate capable of being modified by a temperature of 300 degrees Celsius) and a coating the thermally-sensitive substrate.

6. 发明申请

WO2023027942A1 CHEMICAL VAPOR DEPOSITION PROCESS AND COATING 审中-公开
公开(公告)号：WO2023027942A1
公开(公告)日：2023-03-02
申请号：PCT/US2022/040763
申请日：2022-08-18
申请人： SILCOTEK CORP.
发明人： SNYDER, Nikolis Austin , SMITH, David A. , PATTERSON, Lucas D. , MATTZELA, James B.
IPC分类号： C23C16/24 , C23C16/40 , C23C16/26 , C23C16/56 , F17C3/12
摘要： Coated articles, systems incorporating the coated articles, and processes of applying the coating to form the coated articles are disclosed. The coated article a substrate and a coating on the substrate. The coating includes silicon, carbon, and hydrogen. A post-exposure water contact angle of the coating, after being exposed to ultrasonic agitation using an aqueous solution of a caustic salt, remains above 80 degrees, remains greater than 60% of a pre-exposure water contact angle, or both.

7. 发明公开

EP3165633A1 THERMAL CHEMICAL VAPOR DEPOSITION SPLIT-FUNCTIONALIZATION PROCESS, PRODUCT AND COATING 审中-公开
标题翻译：热化学气相沉积分裂功能化工艺，产品和涂层
公开(公告)号：EP3165633A1
公开(公告)日：2017-05-10
申请号：EP16196501.7
申请日：2016-10-31
申请人： Silcotek Corp.
发明人： YUAN, Min , SMITH, David A. , SILVIS, Paul H. , MATTZELA, James B.
IPC分类号： C23C16/24 , C23C16/30 , C23C16/40 , C23C16/56
CPC分类号： C23C16/45557 , C04B41/456 , C04B41/524 , C23C16/24 , C23C16/30 , C23C16/401 , C23C16/56
摘要： Thermal chemical vapor deposition split-functionalizing processes, coatings, and products are disclosed. The thermal chemical vapor deposition split-functionalizing process includes positioning an article within an enclosed chamber, functionalizing the article within a first temperature range for a first period of time, and then further functionalizing the article within a second temperature range for a second period of time. The thermal chemical vapor deposition split-functionalized product includes a functionalization formed by functionalizing within a first temperature range for a first period of time and a further functionalization formed by further functionalizing within a second temperature range for a second period of time.
摘要翻译：公开了热化学气相沉积分裂功能化工艺，涂层和产品。热化学气相沉积分裂官能化方法包括将制品放置在封闭室内，在第一温度范围内使制品功能化第一段时间，然后在第二温度范围内进一步功能化制品第二段时间。热化学气相沉积分裂官能化产品包括通过在第一温度范围内官能化第一时间段和通过在第二温度范围内进一步官能化第二时间段形成的另一官能化形成的官能化。

8. 发明公开

EP2494087A1 CHEMICAL VAPOR DEPOSITION COATING, ARTICLE, AND METHOD 有权
标题翻译： CVD涂层，制品和方法
公开(公告)号：EP2494087A1
公开(公告)日：2012-09-05
申请号：EP10771619.3
申请日：2010-10-26
申请人： Silcotek Corp.
发明人： SMITH, David A. , MATTZELA, James B. , SILVIS, Paul H. , BARONE, Gary A.
IPC分类号： C23C16/32 , C23C16/56 , B05D7/24
CPC分类号： C23C16/325 , B05D1/60 , B05D2202/15 , C23C8/10 , C23C16/56 , Y10T428/24802
摘要： The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.

9. 发明公开

EP4392593A1 CHEMICAL VAPOR DEPOSITION PROCESS AND COATING 审中-实审
公开(公告)号：EP4392593A1
公开(公告)日：2024-07-03
申请号：EP22777046.8
申请日：2022-08-18
申请人： Silcotek Corp.
发明人： SNYDER, Nikolis Austin , SMITH, David A. , PATTERSON, Lucas D. , MATTZELA, James B.
IPC分类号： C23C16/24 , C23C16/40 , C23C16/26 , C23C16/56 , F17C3/12
CPC分类号： C23C16/24 , C23C16/401 , C23C16/26 , C23C16/56

10. 发明公开

EP2988327A1 SEMICONDUCTOR FABRICATION PROCESS 审中-公开
标题翻译： HALBLEITERHERSTELLUNGSVERFAHREN
公开(公告)号：EP2988327A1
公开(公告)日：2016-02-24
申请号：EP15179688.5
申请日：2015-08-04
申请人： Silcotek Corp.
发明人： MATTZELA, James B.
IPC分类号： H01L21/67 , C23C8/10 , C23C16/32 , C23C16/56
CPC分类号： C23C8/18 , C23C16/325 , C23C16/56
摘要： Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer beign applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.
摘要翻译：描述半导体制造工艺。半导体制造工艺的一个实施方案包括通过化学气相沉积提供由二甲基硅烷分解形成的层，通过流体材料施加层，然后将该层定位在用于制备半导体产品的系统中。另外或替代地，半导体产品被生产和/或该层在基底上。

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