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    • 1. 发明申请
    • INTEGRATED POWER AMPLIFIER CIRCUIT
    • 集成功率放大器电路
    • WO2005002044B1
    • 2005-03-24
    • PCT/CA2004000879
    • 2004-06-17
    • SIGE SEMICONDUCTOR INCDOHERTY MARKGILLIS JOHNMCPARTLIN MICHAELHELMS DAVIDANTOGNETTI PHILLIP
    • DOHERTY MARKGILLIS JOHNMCPARTLIN MICHAELHELMS DAVIDANTOGNETTI PHILLIP
    • H03F1/02H03F1/30H03F3/195
    • H03F3/195H03F1/0233H03F1/0261H03F1/30H03F2200/447H03F2200/451H03F2200/504
    • Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.
    • 功率放大器的现有技术架构采用大量裸片区域,并且利用多个集成电路技术,净制造成本较高且相关联的封装面积较大。 提出了一种新的方案,其中使用多个感测和控制信号来提供对与集成半导体功率放大器相关的关键性能指标的精确和总体控制。 如何以及在何处使用这些感测和控制信号对于实现最可制造且最经济的集成放大器是至关重要的。 根据本发明的第一实施例,提供了一种用于三级功率放大器集成电路的双反馈 - 低功率调节电路。 根据本发明的第二实施例,提供了一种用于三级功率放大器集成电路的具有低RF输出信号功率调节的电流源反馈电路。 根据本发明的第三实施例,一种结合三级功率放大器集成电路的集成对数电流检测器电路形式的检测器电路。 本发明的三个实施例有利地克服了现有技术的限制。
    • 3. 发明专利
    • Integrated power amplifier circuit
    • AU2004252928A1
    • 2005-01-06
    • AU2004252928
    • 2004-06-17
    • SIGE SEMICONDUCTOR INC
    • ANTOGNETTI PHILLIPDOHERTY MARKHELMS DAVIDGILLIS JOHNMCPARTLIN MICHAEL
    • H03F1/30H03F1/02H03F3/195
    • Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.