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1. 发明授权

EP0852539B1 TINTENSTRAHLDRUCKKOPF UND VERFAHREN ZUM HERSTELLEN EINES SOLCHEN TINTENSTRAHLDRUCKKOPFES 失效
标题翻译：喷墨头和用于制备这种喷墨头
公开(公告)号：EP0852539B1
公开(公告)日：1999-07-28
申请号：EP96944566.7
申请日：1996-09-27
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： WERNER, Wolfgang , ZETTLER, Thomas
IPC分类号： B41J2/14 , B41J2/16
CPC分类号： B41J2/1646 , B41J2/14 , B41J2/14072 , B41J2/14129 , B41J2/14201 , B41J2/1603 , B41J2/1607 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2202/13 , Y10S29/016 , Y10T29/49155 , Y10T29/49165 , Y10T29/49401
摘要： The proposed ink-jet printing head has a plurality of parallel channels (K; K1; K2;...) which are etched isotropically through apertures (O) in a first layer (6) overlying the channels (K; K1; K2;...). After the etching process, the apertures (O) in the first layer (6) are closed off by the deposition on the first layer (6) of a second layer (7) which covers the apertures (O), the latter having a diameter of, for example, 1 νm. The apertures (O) produced in the first layer (6) by photolithography and subsequent dry etching are arranged in such a way that the desired channels (K; K1; K2;...) beneath the first layer (6) are exposed by the etching process. Advantages: no adjustment-related costs, formation of closed channels without bonding or adhesive techniques, possibility of integrating the trigger circuit and printing head on a single substrate.

2. 发明授权

EP0721587B1 MIKROMECHANISCHE VORRICHTUNG UND VERFAHREN ZU DEREN HERSTELLUNG 失效
标题翻译：微机械装置和方法及其
公开(公告)号：EP0721587B1
公开(公告)日：1998-12-02
申请号：EP94927478.1
申请日：1994-09-22
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： WERNER, Wolfgang
IPC分类号： G01P15/08
CPC分类号： B81C1/00293 , B81B2207/015 , B81C1/00341 , B81C2203/0136 , G01P1/023 , G01P15/0802 , G01P2015/0814

3. 发明公开

EP0974161A1 HALBLEITERBAUELEMENT MIT STRUKTUR ZUR VERMEIDUNG VON QUERSTRÖMEN 有权
标题翻译：与结构的半导体元件能够防止横向电流
公开(公告)号：EP0974161A1
公开(公告)日：2000-01-26
申请号：EP99910085.2
申请日：1999-01-27
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： WERNER, Wolfgang
IPC分类号： H01L21/761
CPC分类号： H01L27/0921 , H01L21/761
摘要： The invention relates to a semiconductor component comprising a substrate (1) having a first conductivity type, at the surface (15) of which several separate wells (10) having a second conductivity type are placed, with a barrier having the second conductivity type and a higher doping level. Said wells are separated by p-n junctions. The aim of the invention is to provide a semiconductor structure for preventing onset of cross currents in the semiconductor component. For this purpose, at least one of the wells (10) is completely surrounded by an insulating well (2, 6) having the first type of conductivity. The doping level of the insulating well (2, 6) is greater than that of the substrate (1).

4. 发明公开

EP0852539A2 TINTENSTRAHLDRUCKKOPF UND VERFAHREN ZUM HERSTELLEN EINES SOLCHEN TINTENSTRAHLDRUCKKOPFES 失效
标题翻译：喷墨头和用于制备这种喷墨头
公开(公告)号：EP0852539A2
公开(公告)日：1998-07-15
申请号：EP96944566.0
申请日：1996-09-27
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： WERNER, Wolfgang , ZETTLER, Thomas
IPC分类号： B41J2
CPC分类号： B41J2/1646 , B41J2/14 , B41J2/14072 , B41J2/14129 , B41J2/14201 , B41J2/1603 , B41J2/1607 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2202/13 , Y10S29/016 , Y10T29/49155 , Y10T29/49165 , Y10T29/49401
摘要： The proposed ink-jet printing head has a plurality of parallel channels (K; K1; K2;...) which are etched isotropically through apertures (O) in a first layer (6) overlying the channels (K; K1; K2;...). After the etching process, the apertures (O) in the first layer (6) are closed off by the deposition on the first layer (6) of a second layer (7) which covers the apertures (O), the latter having a diameter of, for example, 1 νm. The apertures (O) produced in the first layer (6) by photolithography and subsequent dry etching are arranged in such a way that the desired channels (K; K1; K2;...) beneath the first layer (6) are exposed by the etching process. Advantages: no adjustment-related costs, formation of closed channels without bonding or adhesive techniques, possibility of integrating the trigger circuit and printing head on a single substrate.

5. 发明公开

EP0966764A1 FET MIT SOURCE-SUBSTRATANSCHLUSS 审中-公开
标题翻译：场效应晶体管具有较低源极区
公开(公告)号：EP0966764A1
公开(公告)日：1999-12-29
申请号：EP98966210.0
申请日：1998-12-15
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： TIHANYI, Jenö , WERNER, Wolfgang
IPC分类号： H01L21 , H01L29
CPC分类号： H01L29/7813 , H01L21/187 , H01L29/407 , H01L29/41741 , H01L29/42376 , H01L29/781 , H01L29/7811
摘要： The invention relates to a source-down FET and a grooved gate (8), wherein a first conductive type drain zone (5) is arranged on the surface of a first conductive type semiconductor layer (3) of a first conductive type semiconductor substrate (1). The grooved gate (8) substantially cross-cuts the semiconductor layer (3). A first conductive type source zone (11) is provided on the end of the groove (8) on the other surface of the semiconductor layer (3) and a second conductive type semiconductor zone (6,7) is located in the area close to the groove (8) on the other surface of the semiconductor layer (3), whereby the surface thereof forms another surface of the semiconductor layer (3), together with the surface of the source zone (11).

6. 发明公开

EP0913000A1 DURCH FELDEFFEKT STEUERBARES HALBLEITERBAUELEMENT 失效
公开(公告)号：EP0913000A1
公开(公告)日：1999-05-06
申请号：EP98906848.0
申请日：1998-01-27
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： PFIRSCH, Frank , WERNER, Wolfgang , HIRLER, Franz
IPC分类号： H01L29
CPC分类号： H01L29/0847 , H01L29/0619 , H01L29/0623 , H01L29/7395
摘要： Disclosed is a new planar technology IGBT, wherein minority charge carrier density on the cathode side of the IGBT is increased by introducing a shielding zone (13) which is arranged around a base zone (5), thereby leading to reduced conducting-state voltage (VCESat). As a result of the drift field arising from the concentration gradient between the shielding zone (13) and the base zone (6), the inner zone (2) no longer acts as a drain for the minority charge carriers. In order to prevent a reduction in the IGBT breakdown voltage by introducing the shielding zone (13), an unconnected, floating, high-conductivity area is provided in the inner zone, wherein the lower edge (16) of said area is located further inside the inner zone(2) than the upper edge (14) of the shielding zone (13). The unconnected floating area provides a different type of conduction from the shielding zone and the inner zone (2).
摘要翻译：公开了一种新的平面技术IGBT，其中通过引入布置在基极区（5）周围的屏蔽区（13）来增加IGBT的阴极侧上的少数电荷载流子密度，由此导致减小的导电状态电压（ VCESAT）。由于屏蔽区（13）和基极区（6）之间的浓度梯度引起的漂移场，内部区（2）不再作为少数电荷载流子的漏极。为了防止通过引入屏蔽区域（13）降低IGBT击穿电压，在内区域中提供未连接的浮动的高导电率区域，其中所述区域的下边缘（16）进一步位于内部区域内区（2）比屏蔽区（13）的上边缘（14）更小。未连接的浮动区域为屏蔽区和内区（2）提供了不同类型的传导。

7. 发明公开

EP0721587A1 MIKROMECHANISCHE VORRICHTUNG UND VERFAHREN ZU DEREN HERSTELLUNG 失效
标题翻译：微机械装置和方法及其
公开(公告)号：EP0721587A1
公开(公告)日：1996-07-17
申请号：EP94927478.0
申请日：1994-09-22
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： WERNER, Wolfgang
IPC分类号： G01L1 , B81B3 , B81C1 , G01P1 , G01P15 , H01L21 , H01L29 , H01L49
CPC分类号： B81C1/00293 , B81B2207/015 , B81C1/00341 , B81C2203/0136 , G01P1/023 , G01P15/0802 , G01P2015/0814
摘要： A micromechanical device has a micromechanical region on a carrier or substrate (1, 10). The micromechanical region is covered on the chip by a flat covering (D) arranged on the carrier. In a process for producing such a micromechanical device, a body is formed with a first insulating layer (2, 11) on the carrier (1, 10), with an overlying silicon layer (3, 12), the silicon layer (3, 12) is structured so that passages (L, LS) are formed down to the first insulating layer, an insulating layer region (IS, 13) and an additional flat layer (P, 14) are applied thereon, the additional layer (P, 14) is structured so that passages are formed down to the insulating layer region (IS, 13), the insulating layer region and the underlying areas of the first insulating layer are selectively etched away and a covering layer that forms a flat covering (D) is applied on the additional layer. This device may be mounted in a plastic housing without a clean room atmosphere.

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