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1. 发明申请

WO2007017401A3 METHOD FOR INTEGRATING FUNCTIONAL NANOSTRUCTURES INTO MICROELECTRIC AND NANOELECTRIC CIRCUITS 审中-公开
标题翻译：微纳米电路中功能纳米结构的集成工艺
公开(公告)号：WO2007017401A3
公开(公告)日：2007-04-19
申请号：PCT/EP2006064761
申请日：2006-07-27
申请人： SIEMENS AG , SICKERT DANIEL , ECKSTEIN GERALD , BENKE ANNEGRET , JOST OLIVER , MERTIG MICHAEL , TAEGER SEBASTIAN
发明人： SICKERT DANIEL , ECKSTEIN GERALD , BENKE ANNEGRET , JOST OLIVER , MERTIG MICHAEL , TAEGER SEBASTIAN
IPC分类号： B82B3/00 , H01L21/768 , H01L29/10
CPC分类号： H01L51/102 , B82Y10/00 , B82Y30/00 , H01L51/0048
摘要： The invention relates to a method for integrating functional nanostructures into microelectric and nanoelectric circuits and to a method for producing at least one nanostructure (9) on a substrate (17) consisting in forming at least one multi-electrode arrangement (11) on the substrate (17), wherein said electrodes comprise respective electrode areas projected with respect to the opposite electrode ends (5) which extend along a line in such a way that the adjacent ends (5) produce a respectively frequency time-variable potential difference, in producing a suspension comprising nano-object (3) such as nanotubes, nano-wires and/or carbon nanotubes, in transferring said suspension to the substrate (17) which is arranged between the adjacent ends (5), respectively, in dielectrophoreticly deposing the assembly of respective individual nano-objects (7) on the line between said adjacent ends (5) and in fusing the assembly of respective nano-objects in the area of the ends (5) in such a way that the nanostructure (9) is formed.
摘要翻译：功能纳米结构在微电路和纳电电路中的整合过程。本发明涉及用于在衬底（17）上制造至少一个纳米结构（9）的方法。该方法是通过在基板上区分（17）成功端形成至少一个多电极结构（11），其中，所述电极各自具有从电极的端部（5），其这样沿着相邻端部的线布置背向突出电极部分（ 5）各自产生具有频率的时变电位差; 产生纳米管，纳米线和/或碳纳米管的纳米物体（3），其分别悬浮并将悬浮液转移到相邻端部（5）之间的基底（17）; 沿着相邻端部（5）之间的线，独立纳米物体积聚物（7）的介电泳沉积; 为了形成纳米结构（9），纳米物体积聚物（7）分别在端部（5）的区域中一起生长。

2. 发明申请

WO2005076679A3 METHOD FOR DISPOSING A CONDUCTOR STRUCTURE ON A SUBSTRATE, AND SUBSTRATE COMPRISING SAID CONDUCTOR STRUCTURE 审中-公开
标题翻译：方法用于放置线结构上的衬底和衬底与线结构
公开(公告)号：WO2005076679A3
公开(公告)日：2005-12-22
申请号：PCT/EP2005050322
申请日：2005-01-26
申请人： SIEMENS AG , ECKSTEIN GERALD , WERSING WOLFRAM
发明人： ECKSTEIN GERALD , WERSING WOLFRAM
IPC分类号： B81B7/00 , C01B31/02 , H01L21/48 , H01L21/68 , H01L21/768 , H01L23/498 , H05K1/03 , H05K3/20
CPC分类号： H05K3/20 , B81B7/0006 , B82Y10/00 , B82Y30/00 , H01L21/4846 , H01L21/4867 , H01L21/6835 , H01L21/76838 , H01L23/49877 , H01L2221/1094 , H01L2924/0002 , Y10T428/30 , H01L2924/00
摘要： The invention relates to a method for disposing a conductor structure (2) on a substrate. Said method can be called transfer printing method, in which the following steps are carried out: a) a separable connection (4) is created between at least one transfer support (3) and the conductor structure (2); b) the transfer support (3) comprising the conductor structure (2) and the substrate (1) are joined together such that a connection (5) that is stronger than the separable connection between the transfer support (3) and the conductor structure (2) is created between the conductor structure (2) and the substrate (1); and c) the separable connection (4) between the transfer support (3) and the conductor structure (2) of the transfer support (3) is separated while the connection (5) between the conductor structure (2) and the substrate (1) remains intact. The inventive method is particularly suitable for laterally disposing conductor structures comprising nanotubes (20) at relatively low temperatures (T
摘要翻译：本发明涉及一种用于在衬底（1）上设置的导体结构（2）。该方法可以被称为转移印刷工艺。以下的方法步骤进行：a）制备一个可分离连接（4）（至少一种转移载体3）和导体结构（2）之间，b）将转印介质接触（3）与结构的性能（2）和所述基板（1），以便该线结构（2）和（1）制备的衬底，其高于转印支撑件之间的可分离连接（4）强（3）和导体结构之间的连接（5）（2）和c）分离所述可分离连接（4）转移载体（3）和导体结构（2）之间转移载体（3），其中所述线结构（2）和所述基板（1）之间的连接（5）被保持的。该方法特别适合于侧线结构与纳米管（20）在相对低的温度下（T <600 <°> C）布置。结果是具有在基板（2）安装在所述基板的基板接触面（10，11）（1）和至少一个另外的基片接触表面（10，11）的线结构的基板（1）（1）与衬底（1）连接。在基板（1）的特征在于，所述基板接触表面（10，11），用于另外的基片接触表面（10，11）的两个基片的接触表面（10，11）的纳米管（20）之间的线路结构（2）对准。纳米管（20）横向布置。通过横向布置出现的纳米线。纳米管（20）的优良的电性能和热性能都可用。

3. 发明专利

JP2007005811A Electronic part and method for producing the same 审中-公开
标题翻译：电子部件及其制造方法
公开(公告)号：JP2007005811A
公开(公告)日：2007-01-11
申请号：JP2006174031
申请日：2006-06-23
申请人： Siemens Ag , シーメンスアクチエンゲゼルシヤフトSiemens Aktiengesellschaft
发明人： ECKSTEIN GERALD , FREUDENBERG OLIVER , MUELLER GUNTER , SCHIER MICHAEL , WILD STEPHAN
IPC分类号： H01L21/3205 , H01L23/52 , H01L27/14 , H01L27/146
CPC分类号： H01L31/0203 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/13 , H01L31/18 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/0558 , H01L2224/05644 , H01L2224/13009 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/16 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01061 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/04953 , H01L2924/12043 , H01L2924/1305 , H01L2924/1306 , H01L2924/3011 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a highly reliable electronic part, and an electronic assembly which can be arranged closely each other. SOLUTION: CMOS structures (20, 20') to form a circuit in semiconductor substrates (10, 10') are formed. After the CMOS structures (20, 20') have been formed in a low-temperature process, especially, in a process at 450°C or below; at least one electrical conductor (30, 30') is formed within an opening in the semiconductor substrates (10, 10'), for connecting the circuit between a first side (S1) and a second side (S2) of the semiconductor substrates (10, 10') opposite to the first side (S1). The electronic part allows a close arrangement of electronic circuits and sensors (80, 80'), and is suitable, especially, for a medical apparatus. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造高可靠性电子部件的方法和可以彼此紧密布置的电子组件。解决方案：形成在半导体衬底（10,10'）中形成电路的CMOS结构（20,20'）。在CMOS结构（20,20'）已经在低温工艺中形成，特别是在450℃或以下的工艺中。至少一个电导体（30,30'）形成在半导体衬底（10,10'）的开口内，用于将半导体衬底的第一侧（S1）和第二侧（S2）之间的电路连接 10，10'）与第一侧（S1）相对。电子部件允许电子电路和传感器（80,80'）的紧密布置，并且特别适用于医疗装置。版权所有（C）2007，JPO＆INPIT

4. 发明专利

DE102006040726A1 未知
公开(公告)号：DE102006040726A1
公开(公告)日：2008-03-13
申请号：DE102006040726
申请日：2006-08-31
申请人： SIEMENS AG
发明人： ECKSTEIN GERALD , KUEHNE INGO
IPC分类号： H02N2/18
摘要： The embodiments describe an apparatus, in particular a microsystem, including a device for energy conversion, which device has apiezoelectric, mechanically vibrating diaphragm structure for converting mechanical energy into electrical energy. The diaphragm structure being coupled to a transformer and it being possible to displace said diaphragm structure by moving the transformer, and it being possible to effect the movement of the transformer in a contact-free fashion by interaction of the transformer with a moving part.

5. 发明专利

DE10203397B4 未知
公开(公告)号：DE10203397B4
公开(公告)日：2007-04-19
申请号：DE10203397
申请日：2002-01-29
申请人： SIEMENS AG , SIEMENS AUDIOLOGISCHE TECHNIK
发明人： ECKSTEIN GERALD , GEBERT ANTON , SAUER JOSEPH , ZAPF JOERG
IPC分类号： H01L23/50 , H01L21/60 , H01L23/31 , H01L23/522

6. 发明专利

DE102005037876A1 未知
公开(公告)号：DE102005037876A1
公开(公告)日：2007-02-22
申请号：DE102005037876
申请日：2005-08-10
申请人： SIEMENS AG
发明人： ECKSTEIN GERALD , KUEHNE INGO
IPC分类号： H02N1/00
摘要： A device for converting mechanical energy into electrical energy has first electrode formed of a first material having a first work function for a charge carrier, and a second electrode formed of a second material having a second work function for a charge carrier, the second work function being different from the first work function. The first electrode and the second electrode are interconnected by a first load circuit in an electroconductive manner. The second electrode is arranged at a variable distance from the first electrode.

7. 发明专利

DE102005018321A1 未知
公开(公告)号：DE102005018321A1
公开(公告)日：2006-11-02
申请号：DE102005018321
申请日：2005-04-20
申请人： SIEMENS AG
发明人： ECKSTEIN GERALD , KUEHNE INGO , WEINKE ROBERT
IPC分类号： H02N1/00 , B81B3/00 , B81B7/00

8. 发明专利

DE102009010639A1 Verfahren und Anordnung zur Inhibierung einer chemischen Reaktion von Substanzen in einer Flüssigkeit vor einer Messung 未知
公开(公告)号：DE102009010639A1
公开(公告)日：2010-11-11
申请号：DE102009010639
申请日：2009-02-26
申请人： SIEMENS AG
发明人： ECKSTEIN GERALD , FREY ALEXANDER , GUMBRECHT WALTER , PAULICKA PETER , SCHIENLE MEINRAD , STANZEL MANFRED
IPC分类号： G01N33/50 , G01N1/40 , G01N33/53
摘要： Beim Befüllen einer Durchflusszelle 1 mit Flüssigkeit werden durch Kühlen chemische Reaktionen von Substanzen in der Flüssigkeit mit Molekülen auf Sensoren eines Sensor-Arrays 5 in der Durchflusszelle 1 inhibiert. Wenn das Befüllen der Durchflusszelle 1 abgeschlossen ist, werden chemische Reaktionen gestartet durch Erwärmung eines festen Trägers 2, auf welchem das Sensor-Array 5 angeordnet ist. Ein Nachweis der Substanzen in der Flüssigkeit erfolgt über eine Messung der Reaktionsprodukte nach Erwärmung. Ein Verschleppen von Reaktionsprodukten beim Befüllen der Durchflusszelle 1 wird verhindert und an einem Sensor des Sensor-Arrays 5 werden nur spezifisch an diesem gebildete Reaktionsprodukte vermessen.

9. 发明专利

DE102008038356B4 未知
公开(公告)号：DE102008038356B4
公开(公告)日：2010-05-12
申请号：DE102008038356
申请日：2008-08-19
申请人： SIEMENS AG
发明人： ECKSTEIN GERALD , EVERSMANN BJOERN-OLIVER , FREY ALEXANDER , KUEHNE INGO , SCHIENLE MEINRAD
IPC分类号： H03M1/00

10. 发明专利

DE102006035640B4 未知
公开(公告)号：DE102006035640B4
公开(公告)日：2008-09-04
申请号：DE102006035640
申请日：2006-07-31
申请人： SIEMENS AG
发明人： ECKSTEIN GERALD , SICKERT DANIEL
IPC分类号： G01N30/60 , B01J20/06

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