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    • 1. 发明申请
    • ANTI-VIRAL COMPOSITION, METHOD FOR PRODUCING THE COMPOSITION, AND VIRUS INACTIVATION METHOD
    • 抗虚拟组合物,用于生产组合物的方法和病毒灭活方法
    • WO2015040989A1
    • 2015-03-26
    • PCT/JP2014/071458
    • 2014-08-08
    • SHOWA DENKO K.K.
    • MIYAISHI, SouHOSOGI, YasuhiroKURODA, Yasushi
    • A01N59/00A01N59/16A01N59/20A61L9/00A61K33/24A61K33/34
    • A61K33/34A01N59/20A61K33/245A61K2300/00A01N25/00A01N25/08A01N59/00
    • To provide an anti-viral composition, an anti-viral agent, and a photocatalyst, which exhibit excellent anti-viral property under light and in the dark; a method for producing the anti-viral composition; and a virus inactivation method. The anti-viral composition of the present invention contains BiVO 4 and a divalent copper compound. The anti-viral agent and photocatalyst of the present invention each contain the anti-viral composition of the present invention. The anti-viral composition production method includes a mixing step of mixing BiVO 4 , a divalent copper compound or a divalent copper compound raw material, water, and an alkaline substance, to thereby form a mixture; and a separation step of separating an anti-viral composition from the mixture. The virus inactivation method of the present invention inactivates a virus by use of the anti-viral composition of the present invention, the anti-viral agent of the present invention, or the photocatalyst of the present invention.
    • 提供在光和黑暗中表现出优异的抗病毒性能的抗病毒组合物,抗病毒剂和光催化剂; 制备抗病毒组合物的方法; 和病毒灭活方法。 本发明的抗病毒组合物含有BiVO4和二价铜化合物。 本发明的抗病毒剂和光催化剂各自含有本发明的抗病毒组合物。 抗病毒组合物制造方法包括混合BiVO4,二价铜化合物或二价铜化合物原料的水和碱性物质,从而形成混合物; 以及从混合物中分离抗病毒组合物的分离步骤。 本发明的病毒灭活方法通过使用本发明的抗病毒组合物,本发明的抗病毒剂或本发明的光催化剂来灭活病毒。
    • 8. 发明公开
    • TUNGSTEN OXIDE PHOTOCATALYST MODIFIED WITH COPPER ION, AND PROCESS FOR PRODUCTION THEREOF
    • MIT KUPFERIONEN MODIFIZIERTER WOLFRAMOXID-PHOTOKATALYSATOR SOWIE HERSTELLUNGSVERFAHRENDAFÜR
    • EP2537583A1
    • 2012-12-26
    • EP11744639.3
    • 2011-02-15
    • Showa Denko K.K.
    • HOSOGI, Yasuhiro
    • B01J35/02B01J37/08
    • B01J35/004B01D53/8668B01D2255/20761B01D2255/20776B01D2255/802B01J23/888B01J35/1009B01J37/06
    • The present invention relates to a copper ion-modified tungsten oxide photocatalyst subjected to chemical etching treatment with a basic aqueous solution in which a rate of change in diffuse reflectance of the photocatalyst as measured at a wavelength of 700 nm between before and after irradiated with an ultraviolet light in atmospheric air is less than 10%; and a process for producing a copper ion-modified tungsten oxide photocatalyst which includes a copper ion modifying step of modifying a tungsten oxide powder with a copper ion; a chemical etching step of subjecting the tungsten oxide powder to chemical etching treatment with a basic aqueous solution, the chemical etching treatment being carried out either before or after the copper ion modifying step; and a drying step of drying the product obtained after the above steps at a temperature of 200°C or lower.
    • 本发明涉及一种用碱性水溶液进行化学蚀刻处理的铜离子改性钨氧化物光催化剂,其中,在照射前后的700nm波长下测定的光催化剂的漫反射率的变化率 大气中的紫外线小于10%; 以及制造铜离子改性的氧化钨光催化剂的方法,其包括用铜离子改性氧化钨粉末的铜离子改性工序; 化学蚀刻步骤,用碱性水溶液对氧化钨粉末进行化学蚀刻处理,化学蚀刻处理在铜离子修饰步骤之前或之后进行; 以及在200℃以下的温度下干燥上述步骤后得到的产物的干燥工序。