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1. 发明申请

US20160289861A1 METHOD FOR MANUFACTURING SINGLE CRYSTAL 有权
标题翻译：制造单晶的方法
公开(公告)号：US20160289861A1
公开(公告)日：2016-10-06
申请号：US15036095
申请日：2014-11-12
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Yuuichi MIYAHARA , Shou TAKASHIMA , Yasuhiko SAWAZAKI , Atsushi IWASAKI
IPC分类号： C30B15/10 , C30B15/30 , C30B30/04 , C30B29/06
CPC分类号： C30B15/10 , C03C3/04 , C03C2201/30 , C03C2201/32 , C30B15/30 , C30B29/06 , C30B30/04
摘要： Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.
摘要翻译：根据CZ方法制造单晶的方法，包括：预先检查用于制造石英坩埚的石英原料粉末中的Al / Li比与坩埚的使用时间，使用时间，以及归因于失透部分的熔体泄漏的发生或不发生; 设定石英坩埚的失透比的范围，以便不产生熔体泄漏，并且根据Al / Li比确定石英坩埚的最大使用时间，使其落入该比率的设定范围内相关的基础; 并在最大使用时间范围内使用石英坩埚生长单晶。这提供了可以有效地使用石英坩埚来生长单晶同时防止熔体泄漏的发生的制造方法。

2. 发明申请

US20170260646A1 METHOD FOR PRODUCING SINGLE CRYSTAL 审中-公开
公开(公告)号：US20170260646A1
公开(公告)日：2017-09-14
申请号：US15506478
申请日：2015-08-25
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Shou TAKASHIMA , Yuuichi MIYAHARA , Atsushi IWASAKI
IPC分类号： C30B15/22 , C30B29/06
CPC分类号： C30B15/22 , C30B15/20 , C30B15/203 , C30B29/06
摘要： A method for producing a single crystal, wherein the space is adjusted to a predetermined distance by measuring a distance from a reference height position at a predetermined height above a melt surface to a lower end part of an in-furnace structure in a state wherein the in-furnace structure above the melt surface is installed in a pull chamber, obtaining a lower end part position error which is a difference between measured distance and a distance from the previously set reference height position to the lower end part of the in-furnace structure, obtaining a target distance from the melt surface to the reference height position by adding the lower end part position error and a distance from the reference height position to a melt surface position, and adjusting a distance from an initial position of the melt surface to the reference height position such that the target distance is attained.

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