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1. 发明申请

US20130252397A1 MANUFACTURING METHOD FOR HIGH CAPACITANCE CAPACITOR STRUCTURE 有权
标题翻译：高容量电容器结构的制造方法
公开(公告)号：US20130252397A1
公开(公告)日：2013-09-26
申请号：US13476251
申请日：2012-05-21
申请人： SHIN-BIN HUANG , CHENG-YEH HSU , CHUNG-LIN HUANG
发明人： SHIN-BIN HUANG , CHENG-YEH HSU , CHUNG-LIN HUANG
IPC分类号： H01L21/02
CPC分类号： H01L28/91
摘要： A manufacturing method of a capacitor structure is provided, which includes the steps of: on a substrate having a first oxide layer, (a) forming a first suspension layer on the first oxide layer; (b) forming a first shallow trench into the first oxide layer above the substrate; (c) forming a second oxide layer filling the first shallow trench; (d) forming a second suspension layer on the second oxide layer; (e) forming a second shallow trench through the second suspension layer into the second oxide layer above the first suspension layer; (f) forming at least one deep trench on the bottom surface of the second shallow trench through the second and the first oxide layers, (g) forming an electrode layer on the inner surface of the deep trench; and (h) removing the first and second oxide layers through the trench openings in the first and the second suspension layers.
摘要翻译：提供一种电容器结构的制造方法，其包括以下步骤：在具有第一氧化物层的衬底上，（a）在第一氧化物层上形成第一悬浮层; （b）在衬底上方的第一氧化物层中形成第一浅沟槽; （c）形成填充所述第一浅沟槽的第二氧化物层; （d）在第二氧化物层上形成第二悬浮层; （e）通过所述第二悬浮层形成穿过所述第一悬浮层上方的所述第二氧化物层的第二浅沟槽; （f）通过第二和第一氧化物层在第二浅沟槽的底表面上形成至少一个深沟槽，（g）在深沟槽的内表面上形成电极层; 和（h）通过第一和第二悬浮层中的沟槽开口去除第一和第二氧化物层。

2. 发明申请

US20110092044A1 METHOD FOR MANUFACTURING CAPACITOR LOWER ELECTRODES OF SEMICONDUCTOR MEMORY 有权
标题翻译：制造电容器半导体存储器下部电极的方法
公开(公告)号：US20110092044A1
公开(公告)日：2011-04-21
申请号：US12699399
申请日：2010-02-03
申请人： SHIN-BIN HUANG , TZUNG-HAN LEE , CHUNG-LIN HUANG
发明人： SHIN-BIN HUANG , TZUNG-HAN LEE , CHUNG-LIN HUANG
IPC分类号： H01L21/02
CPC分类号： H01L28/92
摘要： A method for manufacturing capacitor lower electrodes includes a dielectric layer, a first silicon nitride layer and a hard mask layer; partially etching the hard mask layer, the first silicon nitride layer and the dielectric layer to form a plurality of concave portions; depositing a second silicon nitride layer onto the hard mask layer and into the concave portions; partially etching the second silicon nitride layer, the hard mask layer and the dielectric layer to form a plurality of trenches; forming a capacitor lower electrode within each trench and partially etching the first silicon nitride layer, the second silicon nitride layer, the dielectric layer and the capacitor lower electrodes to form an etching area; and etching and removing the dielectric layer from the etching area, thereby a periphery of each capacitor lower electrode is surrounded and attached to by the second silicon nitride layer.
摘要翻译：制造电容器下电极的方法包括电介质层，第一氮化硅层和硬掩模层; 部分地蚀刻硬掩模层，第一氮化硅层和电介质层以形成多个凹部; 在所述硬掩模层上沉积第二氮化硅层并进入所述凹部; 部分蚀刻第二氮化硅层，硬掩模层和电介质层以形成多个沟槽; 在每个沟槽内形成电容器下电极，并部分地蚀刻第一氮化硅层，第二氮化硅层，电介质层和电容器下电极以形成蚀刻区域; 并且从蚀刻区域蚀刻除去电介质层，由此每个电容器下电极的周围被第二氮化硅层包围并附着。

3. 发明申请

US20110065253A1 MANUFACTURING METHOD FOR DOUBLE-SIDE CAPACITOR OF STACK DRAM 有权
标题翻译：堆叠DRAM双面电容器的制造方法
公开(公告)号：US20110065253A1
公开(公告)日：2011-03-17
申请号：US12698322
申请日：2010-02-02
申请人： SHIN-BIN HUANG , TSUNG-HAN LEE , CHUNG-LIN HUANG
发明人： SHIN-BIN HUANG , TSUNG-HAN LEE , CHUNG-LIN HUANG
IPC分类号： H01L21/02
CPC分类号： H01L27/10852 , H01L28/90
摘要： A manufacturing method for double-side capacitor of stack DRAM has steps of: forming a sacrificial structure in the isolating trench and the capacitor trenches; forming a first covering layer and a second covering layer on the sacrificial structure; modifying a part of the second covering layer; removing the un-modified second covering layer and the first covering layer to expose the sacrificial structure; removing the exposed part of the sacrificial structure to expose the electrode layer; removing the exposed electrode layer to expose the oxide layer; and removing the oxide layer and sacrificial structure to form the double-side capacitors.
摘要翻译：堆叠DRAM的双面电容器的制造方法具有以下步骤：在隔离沟槽和电容器沟槽中形成牺牲结构; 在所述牺牲结构上形成第一覆盖层和第二覆盖层; 修改第二覆盖层的一部分; 去除未改性的第二覆盖层和第一覆盖层以暴露牺牲结构; 去除所述牺牲结构的暴露部分以暴露所述电极层; 去除暴露的电极层以暴露氧化物层; 并去除氧化物层和牺牲结构以形成双面电容器。

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