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1. 发明申请

US20080216956A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080216956A1
公开(公告)日：2008-09-11
申请号：US11850722
申请日：2007-09-06
申请人： SHIGERU NAKAMOTO , Tatehito Usui , Kazuhiro Joo , Takashi Fujii , Hiroshige Uchida
发明人： SHIGERU NAKAMOTO , Tatehito Usui , Kazuhiro Joo , Takashi Fujii , Hiroshige Uchida
IPC分类号： C23F1/00
CPC分类号： G01B11/0625 , G01B11/0683 , H01J37/32935 , H01J37/32972 , H01J2237/334
摘要： To provide a plasma processing apparatus using a measuring method of a film thickness of a material to be processed, which method is capable of accurately measuring an actual residual film amount and an etching depth of the layer to be processed. The plasma processing apparatus includes: a detector 11 adapted to detect interference light of a plurality of wavelengths from the surface of a sample in a vacuum container; pattern comparing means 15 adapted to compare actual deviation pattern data relating to the interference light obtained at an arbitrary time point during the processing of the sample, with a plurality of standard deviation patterns which are data of interference light of a plurality of wavelengths relating to processing of another sample obtained before the processing of the sample, and which correspond to a plurality of thicknesses of the film, and adapted to calculate a deviation between the actual deviation pattern data and the standard deviation patterns; deviation comparing means 115 adapted to compare the deviation between the actual deviation pattern data and the standard deviation patterns, with a deviation set beforehand, and to output data relating to the film thickness of the sample at the time; residual film thickness time series data recording means 18 adapted to record the data relating to the film thickness as time series data; and an end point determining device 230 adapted to determine that etching of a predetermined amount is ended, by using the data of the film thickness.
摘要翻译：为了提供使用待处理材料的膜厚测量方法的等离子体处理装置，该方法能够精确地测量待处理层的实际残留膜量和蚀刻深度。等离子体处理装置包括：检测器11，其适于从真空容器中的样品的表面检测多个波长的干涉光; 模式比较装置15，其适于将与在样本处理期间的任意时间点获得的干涉光相关的实际偏差图案数据与作为与处理有关的多个波长的干涉光的数据的多个标准偏差图案进行比较在样品处理之前获得并且对应于膜的多个厚度的另一个样品，并且适于计算实际偏差图案数据和标准偏差图案之间的偏差; 偏差比较装置115，用于比较实际偏差图案数据和标准偏差图案之间的偏差，预先设定的偏差，并输出与当时样品的膜厚有关的数据; 残膜厚度时间序列数据记录装置18，适于将与薄膜厚度相关的数据记录为时间序列数据; 以及适于通过使用膜厚度的数据来确定预定量的蚀刻结束的端点确定装置230。

2. 发明申请

US20070178610A1 Semiconductor Production Apparatus 审中-公开
标题翻译：半导体生产设备
公开(公告)号：US20070178610A1
公开(公告)日：2007-08-02
申请号：US11696878
申请日：2007-04-05
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
IPC分类号： H01L21/00 , H01L21/306 , C23F1/00 , H01L21/302
CPC分类号： H01J37/32972 , H01L21/32137
摘要： A semiconductor production apparatus and method for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by use of a plasma generated in the container. A temporal change of a quantity of an interference light is detected for at least two wavelengths obtained from the surface of the wafer for a predetermined time period of an etching process of the wafer, an etching quantity of the wafer is determined, which varies as long as the etching process proceeds, based upon a particular change arising in the interference light of plural pairs of wavelengths, the plural pairs of the wavelengths corresponding to the etching quantities, respectively.
摘要翻译：一种用于通过使用在容器中产生的等离子体来蚀刻布置在容器中并在其表面上具有膜的半导体晶片的半导体制造装置和方法。在晶片的蚀刻处理的预定时间段内，从晶片表面获得的至少两个波长检测干涉光量的时间变化，确定晶片的蚀刻量，其长度变化随着蚀刻工艺的进行，基于在多对波长的干涉光中产生的特定变化，分别对应于蚀刻量的多对波长。

3. 发明申请

US20050194095A1 Semiconductor production apparatus 审中-公开
标题翻译：半导体生产设备
公开(公告)号：US20050194095A1
公开(公告)日：2005-09-08
申请号：US10790185
申请日：2004-03-02
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
IPC分类号： C23F1/00
CPC分类号： H01J37/32972 , H01L21/32137
摘要： A semiconductor production apparatus for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by a plasma generated in the container is disclosed. The temporal change of the amount of light is detected for at least two wavelengths obtained from the wafer surface for a predetermined period of the processing time. The etching condition is determined by comparing a predetermined time with the time length between a time point at which the temporal change amount of the light of one of the two wavelengths assumes a maximum value and a time point at which the amount of light of the other wavelength assumes a minimum value.
摘要翻译：公开了一种半导体制造装置，用于通过容器中产生的等离子体来蚀刻布置在容器中并且在其表面上具有膜的半导体晶片。在处理时间的预定时间段内，从晶片表面获得的至少两个波长检测光量的时间变化。通过将预定时间与两个波长中的一个的光的时间变化量取为最大值的时间点与另一个的一个的光的时间点之间的时间长度进行比较来确定蚀刻条件波长假定为最小值。

4. 发明申请

US20070202613A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070202613A1
公开(公告)日：2007-08-30
申请号：US11371921
申请日：2006-03-10
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
IPC分类号： H01L21/66
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus is provided using a method of measuring the thickness of a processed material, by which the actual remaining thickness or etching depth of a processed layer can be correctly measured online. The plasma processing apparatus includes a detector 11 for detecting interference light of multiple wavelengths from a surface of a sample during processing, pattern comparing means 15 for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, deviation comparing means 115 for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, remaining-thickness time-series data recording means 18 for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit 230 for deciding completion of a predetermined amount of etching by using the data on the thickness of the film.
摘要翻译：使用测量加工材料的厚度的方法来提供等离子体处理装置，通过该方法可以在线正确地测量处理层的实际剩余厚度或蚀刻深度。等离子体处理装置包括：检测器11，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较装置15，用于比较在处理期间获得的干涉光获得的实际偏差图案数据与多个标准对应于膜的两个或更多个厚度的偏差图案，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，用于比较的偏差比较装置115 数据之间的偏差和预定的偏差，并输出当时的样品的胶片的厚度，用于记录的剩余厚度时间序列数据记录装置18作为时间序列数据的数据，电影以及用于决定预定量的完成的端点决定单元230 通过使用关于膜的厚度的数据进行蚀刻。

5. 发明授权

US08088247B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08088247B2
公开(公告)日：2012-01-03
申请号：US11371921
申请日：2006-03-10
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus is provided using a method of measuring the thickness of a processed material, by which the actual remaining thickness or etching depth of a processed layer can be correctly measured online. The plasma processing apparatus includes a detector 11 for detecting interference light of multiple wavelengths from a surface of a sample during processing, pattern comparing means 15 for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, deviation comparing means 115 for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, remaining-thickness time-series data recording means 18 for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit 230 for deciding completion of a predetermined amount of etching by using the data on the thickness of the film.
摘要翻译：使用测量加工材料的厚度的方法来提供等离子体处理装置，通过该方法可以在线正确地测量处理层的实际剩余厚度或蚀刻深度。等离子体处理装置包括：检测器11，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较装置15，用于比较在处理期间获得的干涉光获得的实际偏差图案数据与多个标准对应于膜的两个或更多个厚度的偏差图案，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，用于比较的偏差比较装置115 数据之间的偏差和预定的偏差，并输出当时的样品的胶片的厚度，用于记录的剩余厚度时间序列数据记录装置18作为时间序列数据的数据，电影以及用于决定预定量的完成的端点决定单元230 通过使用关于膜的厚度的数据进行蚀刻。

6. 发明授权

US08747608B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08747608B2
公开(公告)日：2014-06-10
申请号：US13338722
申请日：2011-12-28
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
IPC分类号： C23C16/52 , C23C16/50 , C23C16/06 , C23C16/22
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.
摘要翻译：等离子体处理装置包括：检测器，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较器，用于比较在处理期间获得的干涉光上的实际偏差图案数据与多个标准偏差图案对应于膜的两个或更多个厚度，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，偏差比较器，用于比较数据和预定的偏差，并输出当时的样品的胶片的厚度，作为时间序列数据记录的胶片的厚度数据和端点判定单元的数据。

7. 发明授权

US06596551B1 Etching end point judging method, etching end point judging device, and insulating film etching method using these methods 有权
标题翻译：蚀刻终点判定方法，蚀刻终点判定装置以及使用这些方法的绝缘膜蚀刻方法
公开(公告)号：US06596551B1
公开(公告)日：2003-07-22
申请号：US09452174
申请日：1999-12-01
申请人： Tatehito Usui , Ken Yoshioka , Shoji Ikuhara , Kouji Nishihata , Kazue Takahashi , Tetsunori Kaji , Shigeru Nakamoto
发明人： Tatehito Usui , Ken Yoshioka , Shoji Ikuhara , Kouji Nishihata , Kazue Takahashi , Tetsunori Kaji , Shigeru Nakamoto
IPC分类号： H01L2166
CPC分类号： H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/7681 , H01L21/76897 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Etching end point judging method that includes the following steps in a dry etching end point judging method having a step of reducing noise of input signal waveforms using first digital filter, a step of obtaining a differential coefficient (primary or secondary) of a signal waveform from differential processing by operation circuit, a step of obtaining a smoothed differential coefficient value by reducing the noise components of the time series differential coefficient waveform that was obtained in the previous step, using the second digital filter, and a step of judging an etching end point by comparing the smoothed differential coefficient value and a preset value using discrimination method.
摘要翻译：一种蚀刻终点判定方法，其特征在于，在具有使用第一数字滤波器降低输入信号波形的噪声的步骤的干式蚀刻终点判定方法中，具有以下步骤：获得信号波形的微分系数（初级或次级）通过运算电路的差分处理，通过使用第二数字滤波器减少上一步骤中获得的时间序列差分系数波形的噪声分量来获得平滑的微分系数值的步骤，以及判断蚀刻终点通过使用判别方法比较平滑的微分系数值和预设值。

8. 发明授权

US07411684B2 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
标题翻译：使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法
公开(公告)号：US07411684B2
公开(公告)日：2008-08-12
申请号：US11759536
申请日：2007-06-07
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B11/02 , G01B9/02 , G01J3/45
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.
摘要翻译：一种系统，包括：用于测量待处理部件的膜厚度的膜厚度测量装置，包括：差分波形图案数据库，用于保持由多个波长中的每一个的干涉光的时间差分值组成的标准图案，相对于要处理的第一构件的膜厚度; 用于测量待处理的第二构件的多个波长中的每一个的干涉光的强度的单元; 用于获得由测量的干涉光强度的时间差值组成的实际图案的单元; 以及通过使用多个波长的接收干涉光中的第二波长的接收干涉光的强度的差分值的零交叉点的图案来确定胶片的处理量的单元。

9. 发明申请

US20070229845A1 FILM THICKNESS MEASURING METHOD OF MEMBER TO BE PROCESSED USING EMISSION SPECTROSCOPY AND PROCESSING METHOD OF THE MEMBER USING THE MEASURING METHOD 有权
标题翻译：使用发射光谱处理的成员的薄膜厚度测量方法和使用测量方法的成员的处理方法
公开(公告)号：US20070229845A1
公开(公告)日：2007-10-04
申请号：US11759536
申请日：2007-06-07
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B9/02
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.
摘要翻译：一种系统，包括：用于测量待处理部件的膜厚度的膜厚度测量装置，包括：差分波形图案数据库，用于保持由多个波长中的每一个的干涉光的时间差分值组成的标准图案，相对于要处理的第一构件的膜厚度; 用于测量待处理的第二构件的多个波长中的每一个的干涉光的强度的单元; 用于获得由测量的干涉光强度的时间差值组成的实际图案的单元; 以及通过使用多个波长的接收干涉光中的第二波长的接收干涉光的强度的差分值的零交叉点的图案来确定胶片的处理量的单元。

10. 发明授权

US06961131B2 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
公开(公告)号：US06961131B2
公开(公告)日：2005-11-01
申请号：US10918367
申请日：2004-08-16
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B11/06 , H01L21/00 , H01L21/66 , G01B9/02 , G01R31/26
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

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