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1. 发明专利

GB2454655A Nitride structures with AlInN current confinement layers 未知
公开(公告)号：GB2454655A
公开(公告)日：2009-05-20
申请号：GB0722016
申请日：2007-11-09
申请人： SHARP KK
发明人： BOUSQUET VALERIE , KAUER MATTHIAS , TAN WEI-SIN , HEFFERNAN JONATHAN , TAKAHASHI KOJI
IPC分类号： H01L33/00
摘要： A III-nitride compound device structures, such as for laser diodes or LEDs, have one or more current confinement layers 7 of AIInN and formed with an aperture. The confinement layer 7 may be positioned in the n or p cladding layers. The layer of AlInN may be grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 1x10^2 ohm.cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having relatively lower resistivity.

2. 发明公开

EP2529421A4 LIGHT EMITTING DIODE DEVICE HAVING A WIDE ANGULAR DISTRIBUTION 有权
标题翻译： LED器件具有扩频了在广角
公开(公告)号：EP2529421A4
公开(公告)日：2013-12-04
申请号：EP11737221
申请日：2011-01-26
申请人： SHARP KK
发明人： TAN WEI-SIN , BERRYMAN-BOUSQUET VALERIE , ZHANG TONG , HEFFERNAN JONATHAN
IPC分类号： H01L33/58 , F21K99/00 , F21S2/00 , F21V5/00 , F21V8/00 , F21Y101/02 , F21Y113/00
CPC分类号： F21V3/00 , F21K9/23 , F21K9/232 , F21K9/61 , F21K9/64 , F21K9/65 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , G02B6/0008
摘要： A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide.

3. 发明专利

GB2483689A A method of reducing the density of threading dislocations in light emitting devices, by the selective creation of cavities 未知
公开(公告)号：GB2483689A
公开(公告)日：2012-03-21
申请号：GB201015518
申请日：2010-09-16
申请人： SHARP KK
发明人： SMEETON TIM MICHAEL , SENES MATHIEU XAVIER , TAN WEI-SIN , BERRYMAN-BOUSQUET VALERIE
IPC分类号： H01L33/02 , H01L33/00
摘要： A semiconductor light-emitting device comprises a substrate 101 and a semiconductor layer structure disposed over the substrate. The device particularly relates to Nitride based LEDâ s or lasers, in particular (Al,In,Ga)N deposited on sapphire, silicon, silicon carbide or GaN substrates. The layer structure includes a first layer 102 disposed over the substrate, a second layer 105, and an active region 104 for light emission disposed between the first layer 102 and the second layer 105. One or more cavities 108 are present in the layer structure, each cavity coincident with a respective threading dislocation 103 of at least a first type that extends generally through the layer structure, and a cavity extending from an upper surface of the layer structure through at least the second layer 105 and the active region 104. By removing material at the location of a dislocation, the invention provides effective suppression of the tendency of the threading dislocations to act as non-radiative centers, which improves the light output efficiency. The device may be manufactured by a two-stage method that has a first etching step of selectively etching the layer structure at one or more locations at which a respective threading dislocation is present thereby to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of the or each pilot cavity to produce a respective cavity 108 that extends at least through the second layer 105 and the active region 104.

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