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1. 发明申请

WO2008081998A1 MULTIPLE STACKED NANOSTRUCTURE ARRAYS AND METHODS FOR MAKING THE SAME 审中-公开
标题翻译：多层堆叠的纳米结构阵列及其制备方法
公开(公告)号：WO2008081998A1
公开(公告)日：2008-07-10
申请号：PCT/JP2007/075414
申请日：2007-12-27
申请人： SHARP KABUSHIKI KAISHA , ZHANG, Fengyan , HSU, Sheng Teng
发明人： ZHANG, Fengyan , HSU, Sheng Teng
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： H01L29/0665 , B82Y10/00 , G01N27/127 , H01L29/0673 , H01L29/0676 , H01L31/03529 , Y02E10/50
摘要： A method of fabricating a stacked nanostructure array includes preparing a substrate; forming a bottom electrode directly on the substrate; growing a first nanostructure array directly on the bottom electrode; forming an insulating layer on the first nanostructure array; exposing the upper surface of the first nanostructure array; depositing a second, and subsequent, nanostructure array on a nanostructure array immediately below the second and subsequent nanostructure array; repeating said forming, said exposing and said depositing a subsequent steps to form a stacked nanostructure array; removing an uppermost insulating layer; and forming a top electrode on an uppermost nanostructure array. A sensor incorporating the nanostructure array includes top and bottom electrodes with plural layers of nanostructure array therebetween.
摘要翻译：制造叠层纳米结构阵列的方法包括制备基底; 直接在基板上形成底部电极; 直接在底部电极上生长第一个纳米结构阵列; 在第一纳米结构阵列上形成绝缘层; 暴露第一纳米结构阵列的上表面; 在第二和随后的纳米结构阵列正下方的纳米结构阵列上沉积第二和随后的纳米结构阵列; 重复所述形成，所述曝光和沉积随后的步骤以形成堆叠的纳米结构阵列; 去除最上层绝缘层; 并在最上面的纳米结构阵列上形成顶部电极。结合纳米结构阵列的传感器包括其间具有多层纳米结构阵列的顶部和底部电极。

2. 发明申请

WO2003065438A1 PGO SOLUTIONS FOR THE PREPARATION OF PGO THIN FILMS VIA SPIN COATING 审中-公开
标题翻译：用于通过旋涂来制备PGO薄膜的PGO解决方案
公开(公告)号：WO2003065438A1
公开(公告)日：2003-08-07
申请号：PCT/JP2002/000807
申请日：2002-01-31
申请人： SHARP KABUSHIKI KAISHA
发明人： ZHUANG, Wei-Wei , MAA, Jer-shen , ZHANG, Fengyan , HSU, Sheng Teng
IPC分类号： H01L21/316
CPC分类号： H01L21/31691
摘要： A method of preparing a PGO solution for spin coating includes preparing a 2-methoxyethanol organic solvent; adding Pb(OCH3CO)2¥3H2O to the organic solvent at ambient temperature and pressure in a nitrogen-filled gloved box to form Pb in methoxyethanol; refluxing the solution in a nitrogen atmosphere at 150 Ž for at least two hours; fractionally distilling the refluxed solution at approximately 150 Ž to remove all of the water from the solution; cooling the solution to room temperature; determining the Pb concentration of the solution; adding the 2-methoxyethanol solution to the Pb 2-methoxyethanol until a desired Pb concentration is achieved; combining Ge(OR)4, where R is taken from the group of Rs consisting of CH2CH3 and CH(CH3)2, and 2-methoxyethanol; and adding Ge(OR)4 2-methoxyethanol to PbO 2-methoxyethanol to form the PGO solution having a predetermined metal ion concentration and a predetermined Pb:Ge molar ratio.
摘要翻译：制备用于旋涂的PGO溶液的方法包括制备2-甲氧基乙醇有机溶剂; 在氮气充填的手套箱中，在环境温度和压力下向有机溶剂中加入Pb（OCH 3 CO）2¥3H2O，在甲氧基乙醇中形成Pb; 将溶液在氮气氛下在150℃下回流至少2小时; 将回流的溶液在约150℃下分馏，以从溶液中除去所有的水; 将溶液冷却至室温; 测定溶液的Pb浓度; 将2-甲氧基乙醇溶液加入到Pb 2-甲氧基乙醇中直到达到所需的Pb浓度; 组合Ge（OR）4，其中R取自由CH 2 CH 3和CH（CH 3）2组成的基团和2-甲氧基乙醇; 并向PbO 2 - 甲氧基乙醇中加入Ge（OR）4 2-甲氧基乙醇，形成具有预定的金属离子浓度和预定的Pb:Ge摩尔比的PGO溶液。

3. 发明公开

EP1470579A1 PGO SOLUTIONS FOR THE PREPARATION OF PGO THIN FILMS VIA SPIN COATING 审中-公开
标题翻译：对于薄膜中生产PGO解旋PGO涂料
公开(公告)号：EP1470579A1
公开(公告)日：2004-10-27
申请号：EP02711271.3
申请日：2002-01-31
申请人： SHARP KABUSHIKI KAISHA
发明人： ZHUANG, Wei-Wei , MAA, Jer-shen , ZHANG, Fengyan , HSU, Sheng Teng
IPC分类号： H01L21/316
CPC分类号： H01L21/31691
摘要： A method of preparing a PGO solution for spin coating includes preparing a 2-methoxyethanol organic solvent; adding Pb(OCH3CO)2¥3H2O to the organic solvent at ambient temperature and pressure in a nitrogen-filled gloved box to form Pb in methoxyethanol; refluxing the solution in a nitrogen atmosphere at 150 Ž for at least two hours; fractionally distilling the refluxed solution at approximately 150 Ž to remove all of the water from the solution; cooling the solution to room temperature; determining the Pb concentration of the solution; adding the 2-methoxyethanol solution to the Pb 2-methoxyethanol until a desired Pb concentration is achieved; combining Ge(OR)4, where R is taken from the group of Rs consisting of CH2CH3 and CH(CH3)2, and 2-methoxyethanol; and adding Ge(OR)4 2-methoxyethanol to PbO 2-methoxyethanol to form the PGO solution having a predetermined metal ion concentration and a predetermined Pb:Ge molar ratio.

4. 发明公开

EP1369501A2 Preparation of LCPMO thin films which have reversible resistance change properties 审中-公开
标题翻译： HerstellungdünnerLCPMO Filme mit reversibelenWiederstandsveränderungseigenschaften
公开(公告)号：EP1369501A2
公开(公告)日：2003-12-10
申请号：EP03253093.3
申请日：2003-05-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Weiwei , HSU, Sheng Teng , Pan, Wei , Tajiri, Masayuki
IPC分类号： C23C18/12
CPC分类号： C23C18/1216 , C23C18/1225 , C23C18/1283 , G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method of forming a perovskite thin film includes preparing a perovskite precursor solution; preparing a silicon substrate for deposition of a perovskite thin film, including forming a bottom electrode on the substrate; securing the substrate in a spin-coating apparatus and spinning the substrate at a predetermined spin rate; injecting a perovskite precursor solution into the spin-coating apparatus thereby coating the substrate with the perovskite precursor solution to form a coated substrate; baking the coated substrate at temperatures which increase incrementally from about 90°C to 300°C; and annealing the coated substrate at a temperature of between about 500°C to 800°C for between about five minutes to fifteen minutes.
摘要翻译：形成钙钛矿薄膜的方法包括制备钙钛矿前体溶液; 制备用于沉积钙钛矿薄膜的硅衬底，包括在衬底上形成底电极; 将基材固定在旋涂装置中并以预定的旋转速率旋转基材; 将钙钛矿前体溶液注入到旋涂装置中，由此用钙钛矿前体溶液涂覆基材以形成涂布的基材; 在从约90℃至300℃逐渐增加的温度下烘烤涂覆的基材; 并在约500℃至800℃的温度下退火涂覆的基材约5分钟至15分钟。

5. 发明公开

EP1511085A3 Asymmetric crystalline structure memory cell 有权转让
标题翻译：具有不对称晶体结构的存储单元
公开(公告)号：EP1511085A3
公开(公告)日：2006-03-22
申请号：EP04011964.6
申请日：2004-05-19
申请人： SHARP KABUSHIKI KAISHA
发明人： HSU, Sheng Teng , Li, Tingkai , Evans, David Russell , Zhuang, Wei-Wei , Pan, Wei
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , H01L45/1625
摘要： Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer having a polycrystalline structure over the bottom electrode; forming an EPVR second layer adjacent the first layer, with a nano crystalline or amorphous structure; and, forming a top electrode overlying the first and second EPVR layers. EPVR materials include CMR, high temperature super conductor (HTSC), or perovskite metal oxide materials. In one aspect, the EPVR first layer is deposited with a metalorganic spin coat (MOD) process at a temperature in the range between 550 and 700 degrees C. The EPVR second layer is formed at a temperature less than, or equal to the deposition temperature of the first layer. After a step of removing solvents, the MOD deposited EPVR second layer is formed at a temperature less than, or equal to the 550 degrees C.

6. 发明公开

EP1369501A3 Preparation of LCPMO thin films which have reversible resistance change properties 审中-公开
标题翻译：薄膜的生产与LCPMO reversibelen电阻变化特性
公开(公告)号：EP1369501A3
公开(公告)日：2005-10-12
申请号：EP03253093.3
申请日：2003-05-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Weiwei , HSU, Sheng Teng , Pan, Wei , Tajiri, Masayuki
IPC分类号： C23C18/12 , H01L21/316
CPC分类号： C23C18/1216 , C23C18/1225 , C23C18/1283 , G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method of forming a perovskite thin film includes preparing a perovskite precursor solution; preparing a silicon substrate for deposition of a perovskite thin film, including forming a bottom electrode on the substrate; securing the substrate in a spin-coating apparatus and spinning the substrate at a predetermined spin rate; injecting a perovskite precursor solution into the spin-coating apparatus thereby coating the substrate with the perovskite precursor solution to form a coated substrate; baking the coated substrate at temperatures which increase incrementally from about 90°C to 300°C; and annealing the coated substrate at a temperature of between about 500°C to 800°C for between about five minutes to fifteen minutes.

7. 发明授权

EP1511085B1 Asymmetric crystalline structure memory cell 有权转让
标题翻译：具有不对称晶体结构的存储单元
公开(公告)号：EP1511085B1
公开(公告)日：2011-01-26
申请号：EP04011964.6
申请日：2004-05-19
申请人： Sharp Kabushiki Kaisha
发明人： HSU, Sheng Teng , Li, Tingkai , Evans, David Russell , Zhuang, Wei-Wei , Pan, Wei
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , H01L45/1625

8. 发明公开

EP1511085A2 Asymmetric crystalline structure memory cell 有权转让
标题翻译： Speicherzelle mit asymmetricrischer kristalliner Struktur
公开(公告)号：EP1511085A2
公开(公告)日：2005-03-02
申请号：EP04011964.6
申请日：2004-05-19
申请人： Sharp Kabushiki Kaisha
发明人： HSU, Sheng Teng , Li, Tingkai , Evans, David Russell , Zhuang, Wei-Wei , Pan, Wei
IPC分类号： H01L27/24 , G11C11/34
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , H01L45/1625
摘要： Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer having a polycrystalline structure over the bottom electrode; forming an EPVR second layer adjacent the first layer, with a nano crystalline or amorphous structure; and, forming a top electrode overlying the first and second EPVR layers. EPVR materials include CMR, high temperature super conductor (HTSC), or perovskite metal oxide materials. In one aspect, the EPVR first layer is deposited with a metalorganic spin coat (MOD) process at a temperature in the range between 550 and 700 degrees C. The EPVR second layer is formed at a temperature less than, or equal to the deposition temperature of the first layer. After a step of removing solvents, the MOD deposited EPVR second layer is formed at a temperature less than, or equal to the 550 degrees C.
摘要翻译：提供了非对称结构的存储单元和制造方法。该方法包括：形成底部电极; 在底部电极上形成具有多晶结构的电脉冲各种电阻（EPVR）第一层; 用纳米结晶或无定形结构形成邻近第一层的EPVR第二层; 并且形成覆盖在第一和第二EPVR层上的顶部电极。 EPVR材料包括CMR，高温超导体（HTSC）或钙钛矿金属氧化物材料。在一个方面，EPVR第一层在550-700℃的温度范围内用金属有机旋涂（MOD）工艺沉积.EPVR第二层是在小于或等于沉积温度的第一层。在除去溶剂的步骤之后，将MOD沉积的EPVR第二层在小于或等于550℃的温度下形成。

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