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1. 发明授权

EP0544512B1 Light-emitting diode having a surface electrode of a tree-like form 失效
标题翻译：一种发光二极管与所述表面电极网状
公开(公告)号：EP0544512B1
公开(公告)日：1998-09-02
申请号：EP92310770.0
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabo, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38

2. 发明公开

EP0559455A1 A semiconductor light emitting device 失效
标题翻译： Lichtemittierende Halbleitervorrichtung。
公开(公告)号：EP0559455A1
公开(公告)日：1993-09-08
申请号：EP93301623.0
申请日：1993-03-03
申请人： SHARP KABUSHIKI KAISHA
发明人： Sasaki, Kazuaki , Nakatsu, Hiroshi , Yamamoto, Osamu , Watanabe, Masanori , Yamamoto, Saburo
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device (10) which allows part of an active layer (13) to generate light by supplying current to the part of the active layer (13) is disclosed. The semiconductor light emitting device (10) includes: a semiconductor substrate (11) having upper and lower surface, the upper surface having a stepped portion (11a), the stepped portion (11a) dividing the upper surface into a least a first area and a second area; a current confining layer (20), formed on the upper surface of the substrate (11), the current confining layer (20) being discontinuous at the stepped portion (11a), the current flowing through an area between the first area and the second area of the substrate (11); a multilayer structure (12, 13, 14, 15) formed on the current confining layer (20), the multilayer structure (12, 13, 14, 15) including the active layer (13); a first electrode (17) which covers only part of an upper surface of the multilayer structure (12, 13, 14, 15); and a second electrode (18) formed over the lower surface of the substrate (11). In the semiconductor light emitting device, the light generated from the part of the active layer (13) is extracted to the outside through a portion of the upper surface of the multilayer structure (12, 13, 14, 15) which is not covered with the first electrode (17).
摘要翻译：公开了一种半导体发光器件（10），其通过向有源层（13）的一部分提供电流来允许有源层（13）的一部分产生光。半导体发光器件（10）包括：具有上表面和下表面的半导体衬底（11），上表面具有阶梯部分（11a），阶梯部分（11a）将上表面分成至少第一区域，第二个区域形成在所述基板（11）的上表面上的电流限制层（20），所述电流限制层（20）在所述阶梯部分（11a）处不连续，所述电流流过所述第一区域和所述第二区域之间的区域基板（11）的面积; 形成在电流限制层（20）上的多层结构（12,13,14,15），包括有源层（13）的多层结构（12,13,14,15）; 仅覆盖多层结构（12,13,14,15）的上表面的一部分的第一电极（17）; 以及形成在所述基板（11）的下表面上方的第二电极（18）。在半导体发光器件中，从有源层（13）的一部分产生的光通过未被覆盖的多层结构（12,13,14,15）的上表面的一部分提取到外部第一电极（17）。

3. 发明公开

EP0376753A3 A semiconductor laser device 失效
标题翻译：半导体激光装置
公开(公告)号：EP0376753A3
公开(公告)日：1991-01-23
申请号：EP89313704.2
申请日：1989-12-29
申请人： SHARP KABUSHIKI KAISHA
发明人： Suyama, Takahiro , Kondo, Masafumi , Sasaki, Kazuaki , Hosoda Masahiro , Takahashi, Kosei A210 Excel Heights Tsurumai , Hayakawa, Toshiro
IPC分类号： H01S3/19 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/22 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate (1) and a multi-layered crystal structure disposed on the substrate (1), the multi-layered crystal structure containing a first cladding layer (3), a quantum-well active layer (5) for laser oscillation, and a second cladding layer (7) with a striped ridge portion (12) for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion (12) and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.
摘要翻译：公开了一种半导体激光装置，其包括半导体衬底（1）和设置在衬底（1）上的多层晶体结构，所述多层晶体结构包含第一包层（3），量子阱有源层（5）和具有用于电流注入的条纹状脊部分（12）的第二包层（7），其中条纹状脊部分（12）下面的区域与相邻区域之间的有效折射率之差其至少在一个小面附近比在小面内更大。

4. 发明授权

EP0381521B1 A semiconductor laser device and a method for the production of the same 失效
标题翻译：它们的制备方法的半导体激光装置和处理
公开(公告)号：EP0381521B1
公开(公告)日：2002-05-08
申请号：EP90301124.5
申请日：1990-02-02
申请人： SHARP KABUSHIKI KAISHA
发明人： Kawanishi, Hidenori , Morimoto, Taiji , Kaneiwa, Shinji , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Yano, Seiki , Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Shiomoto, Takehiro , Yamamoto, Saburo
IPC分类号： H01S5/02
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/028 , H01S5/0282 , H01S5/0283

5. 发明公开

EP0544512A1 Light-emitting diode having a surface electrode of a tree-like form 失效
标题翻译： Lichtemittierende Diode mit baumartigerOberflächenelektrode。
公开(公告)号：EP0544512A1
公开(公告)日：1993-06-02
申请号：EP92310770.0
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabo, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38
摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面（330）上的表面电极（316）具有焊盘（318），并且还包括至少一级分支（319a，...，319d），其从所述焊盘（318）线性延伸，第二从一级分支（319a，...，319d）发散并线性延伸的三阶分支（320a，320b和320c）以及从所述一级分支（319a，...，319d）发散并线性延伸的三阶分支（322a，322b和322c）二阶分支（320a，320b和320c）。表面电极（316）外的焊盘（318）不与下面的半导体层（331）电接触，而表面电极（316）和半导体层（331）在端部彼此电接触的最高级分支（322a，322b和322c）。此外，半导体层沿着台面形状的表面电极的图案设置。因此，表面电极（316）下方的无效发光被相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至能够以较高的效率使更短的波长的光能够被排出。

6. 发明公开

EP0359542A3 A semiconductor laser device 失效
公开(公告)号：EP0359542A3
公开(公告)日：1990-08-16
申请号：EP89309284.1
申请日：1989-09-13
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Morimoto, Taiji , Sasaki, Kazuaki , Kondo, Masaki , Suyama, Takahiro , Kondo, Masafumi
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device which comprises a semiconductor substrate (11), a striped mesa disposed on the substrate and having an active layer (13) for laser oscillation, a current injection layer (15) disposed on the striped mesa and having a width (w) smaller than that (W) of the striped mesa, and a burying layer (18) disposed on both sides of the current injection layer (15) so as to come into contact with the side walls of the current injection layer (15), the burying layer (18) being capable of absorbing laser light produce in the active layer (13) and of preventing current from flowing through the outside of the striped mesa.

7. 发明公开

EP0381521A2 A semiconductor laser device and a method for the production of the same 失效
标题翻译：一种半导体激光装置及其制造方法
公开(公告)号：EP0381521A2
公开(公告)日：1990-08-08
申请号：EP90301124.5
申请日：1990-02-02
申请人： SHARP KABUSHIKI KAISHA
发明人： Kawanishi, Hidenori , Morimoto, Taiji , Kaneiwa, Shinji , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Yano, Seiki , Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Shiomoto, Takehiro , Yamamoto, Saburo
IPC分类号： H01S3/025
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure (12) formed on a semiconductor substrate (11), the multi-layered structure (12) having an AlGaAs active layer (16) for laser oscillation, and a protective film (17) formed on the facet, wherein a film containing sulfur (18) is provided between the facet and the protective film (17).
摘要翻译：公开了一种从小面发射激光的半导体激光装置。该半导体激光装置包括形成在半导体衬底（11）上的多层结构（12），该多层结构（12）具有用于激光振荡的AlGaAs活性层（16）和形成的保护膜（17）在小面上，其中在小面和保护膜（17）之间提供含有硫（18）的膜。

8. 发明公开

EP0321294A3 A semiconductor laser device 失效
标题翻译：半导体激光装置
公开(公告)号：EP0321294A3
公开(公告)日：1989-10-18
申请号：EP88311971.1
申请日：1988-12-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Hosoda, Masahiro , Sasaki, Kazuaki , Kondo, Masaki
IPC分类号： H01S3/19 , H01S3/06
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2234 , H01S5/2235 , H01S5/2277
摘要： There is disclosed a semiconductor laser device with a strip-channeled substrate (1) and a double-heterostructure multi-layered crystal (2,3,4) disposed over the substrate (1), the multi-layered crystal containing an active layer (3) for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer (3) just above the striped channel (21) of the substrate (1) based on a decrease in the effective refractive index due to the striped channel (21), the outside of which absorbs a laser beam produced in the active layer (3); a striped mesa (23) that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a pluraltiy of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer (3).
摘要翻译：公开了一种半导体激光器件，其具有设置在衬底（1）上的带状通道衬底（1）和双异质结构多层晶体（2,3,4），所述多层晶体包含有源层 3），用于激光振荡，所述半导体激光器装置包括：光波导，其基于有效折射率的降低而形成在基板（1）的条状沟道（21）正上方的有源层（3）条状通道（21），其外部吸收在有源层（3）中产生的激光束; 条形台面（23），其通过去除对应于光波导的外部的多层晶体的部分而形成; 以及生长在去除部分中的多个埋层，以防止载流子在活性层（3）内横向扩散。

9. 发明授权

EP0627799B1 Semiconductor light-emitting device with third cladding layer 失效
标题翻译：与第三限制层Lichtmittierende半导体器件
公开(公告)号：EP0627799B1
公开(公告)日：1997-10-08
申请号：EP94303990.9
申请日：1994-06-03
申请人： SHARP KABUSHIKI KAISHA
发明人： Sasaki, Kazuaki , Yamamoto, Osamu
IPC分类号： H01S3/19 , H01S3/085 , H01S3/25 , H01L21/20 , H01L33/00
CPC分类号： H01S5/2232 , H01L33/145 , H01S5/18352 , H01S5/2206 , H01S5/3202 , H01S5/32308 , H01S5/4031 , H01S2304/12

10. 发明公开

EP0778625A2 Light-emitting diode having a surface electrode of a tree like form 失效
标题翻译：具有树形表面电极的发光二极管
公开(公告)号：EP0778625A2
公开(公告)日：1997-06-11
申请号：EP97102514.3
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38
摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面（330）上的表面电极（316）具有衬垫（318），并且还具有从衬垫（318）线性延伸的至少一阶分支（319a，...，319d），第二阶从一级分支（319a，...，319d）分叉并线性延伸的三级分支（320a，320b和320c）以及从一级分支（319a，...，319d）线性延伸的三级分支（322a，322b和320c）二阶分支（320a，320b和320c）。表面电极（316）中的焊盘（318）不与下面的半导体层（331）电接触，而表面电极（316）和半导体层（331）在端部处彼此电接触的最高阶分支（322a，322b和322c）。而且，半导体层沿着台面形状的表面电极的图案设置。因此，表面电极（316）下面的无效光发射相对减少，从而可以改善外部量子效率，并且通过省略电流扩散层，甚至可以允许更短波长的光以高效率熄灭。

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