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    • 1. 发明公开
    • Production of graphite intercalation compound and doped carbon films
    • Herstellung von Graphiteinlagerungsverbindung und gedopte Carbonfilme。
    • EP0305790A1
    • 1989-03-08
    • EP88113145.2
    • 1986-03-20
    • SHARP KABUSHIKI KAISHA
    • Yoshimoto, YoshikasuSuzuki, TomonariHigashigaki, YoshiyukiNakajima, ShigeoInoguchi, Toshio
    • C01B31/00H01L29/16
    • C30B29/04C01B32/22C23C16/26C30B25/02
    • The present invention provide a method for preparing graphite intercalation compounds with metal or metal compounds consisting of a simultaneous thermal decomposition of two kinds of starting materials, modified CVD (Chemical vapor deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed at a same time in a reactor in order to intercalate the metal species or metal compound into carbon being depositing on the substrate. Further, the present invention provides a doped carbon film which is capable of P-type or N-type according to kinds of dopant species obtained by partial substitution of dopants for carbon atoms which constitute graphite hexagonal net layer during the growth of carbon films, through simultaneous thermal decomposition of two kinds of source materials for carbon films and for dopant to be substituted.
    • 本发明提供了一种用金属或金属化合物制备石墨插层化合物的方法,该金属或金属化合物由两种起始材料同时热分解,改性CVD(化学气相沉积)法,其中烃作为主体石墨的源材料 在反应器中同时分解用于客体金属物质或金属化合物的有机金属试剂或金属卤化物,以将金属物质或金属化合物嵌入到沉积在基底上的碳中。 此外,本发明提供了一种掺杂碳膜,其能够根据通过在碳膜生长过程中构成石墨六方网状碳层的碳原子的掺杂剂的部分取代而获得的掺杂物种的种类通过P型或N型,通过 用于碳膜和待取代的掺杂剂的两种源材料的同时热分解。
    • 10. 发明公开
    • Production of carbon films
    • Herstellung von Kohlenstoffschichten。
    • EP0201696A2
    • 1986-11-20
    • EP86103833.9
    • 1986-03-20
    • SHARP KABUSHIKI KAISHA
    • Yoshimoto, YoshikasuSuzuki, TomonariHigashigaki, YoshiyukiNakajima, ShigeoInoguchi, Toshio
    • C23C16/26
    • C30B29/04C01B32/22C23C16/26C30B25/02
    • @ Disclosed is a method for preparing pyrolytic carbon films with highly ordered graphite structure at relatively low temperature comprising thermal decomposing an organic compounds introduced by a carrier gas into a reaction chamber to deposit the carbon films onto a single-crystalline substrate. The present invention also is to provide a method for preparing graphite intercalation compounds with metal or metal compounds consisting of a simultaneous thermal decomposition of two kinds of starting materials, modified CVD (Chemical vapor deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed at a same time in a reactor in order to intercalate the metal species or metal compound into carbon being depositing on the substrate. Further, the present invention is to provide a doped carbon film which is capable of P-type or N-type according to kinds of dopant species obtained by partial substitution of dopants for carbon atoms which constitute graphite hexagonal net layer during the growth of carbon films, through simultaneous thermal decomposition of two kinds of source materials for carbon films and for dopant to be substituted.
    • 公开了一种在相对低的温度下制备具有高度有序石墨结构的热解碳膜的方法,包括将由载气引入的有机化合物热分解成反应室,以将碳膜沉积在单晶衬底上。 本发明还提供一种制备石墨插层化合物的方法,所述金属或金属化合物由两种原料的同时热分解组成,其中烃作为主体的源材料的改性CVD(化学气相沉积)方法 在反应器中同时分解用于客体金属物质或金属化合物的石墨和其它有机金属试剂或金属卤化物,以将金属物质或金属化合物嵌入到沉积在基底上的碳中。 此外,本发明提供一种掺杂碳膜,其能够根据在碳膜生长期间构成石墨六方网状碳层的碳原子的掺杂剂的部分取代而获得的掺杂剂种类的P型或N型 ,通过对碳膜和待取代的掺杂剂的两种源材料的同时热分解。