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1. 发明公开

KR20120015651A Light emitting diode with improved light extraction efficiency 审中-公开
标题翻译：具有改进的光提取效率的发光二极管
公开(公告)号：KR20120015651A
公开(公告)日：2012-02-22
申请号：KR20100077924
申请日：2010-08-12
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM JAE MOO , LEE KEUM JU
IPC分类号： H01L33/44 , H01L33/00 , H01L33/46
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： PURPOSE: A light emitting diode having improved optical extraction efficiency is provided to prevent a current to be excessively focused on the crystal defect of light emission regions by partitioning a light-emitting structure into a plurality of light emitting regions. CONSTITUTION: A light-emitting structure including light emitting regions(LE1,LE2) is formed in the top of a substrate. The light-emitting structure comprises a first electrical conductive semiconductor layer, an active layer, and a second electrical conductive semiconductor layer. A first electrode pad(35) is electrically connected to the first electrical conductive semiconductor layer. A second electrode pad(33) is located on the upper side of the substrate. An insulation reflecting layer(31) separates the second electrode pad from the light-emitting structure. A pattern(LEE) of optical extraction elements is located on the upper side of the second electrical conductive semiconductor layer.
摘要翻译：目的：提供具有提高的光提取效率的发光二极管，以通过将发光结构分隔成多个发光区域来防止电流过度聚焦于发光区域的晶体缺陷。构成：在衬底的顶部形成包括发光区域（LE1，LE2）的发光结构。发光结构包括第一导电半导体层，有源层和第二导电半导体层。第一电极焊盘（35）电连接到第一导电半导体层。第二电极焊盘（33）位于衬底的上侧。绝缘反射层（31）将第二电极焊盘与发光结构分离。光提取元件的图案（LEE）位于第二导电半导体层的上侧。

2. 发明公开

KR20120014750A Light emitting diode having distributed bragg reflector 有权
标题翻译：具有分布式BRAGG反射器的发光二极管
公开(公告)号：KR20120014750A
公开(公告)日：2012-02-20
申请号：KR20100076914
申请日：2010-08-10
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/22 , H01L33/42 , H01L33/58 , H01L2924/12041 , H01L2933/0016 , H01L2933/0058
摘要： PURPOSE: A light emitting diode having a distributed Bragg reflector is provided to improve the light extraction efficiency of a light emitting diode by forming a top insulating layer and a transparent conductive layer into a refractive index grading layer. CONSTITUTION: A light emitting structure(30) includes an active layer(27). An top insulating layer(37) covers the light emitting structure. A distributed Bragg reflector(40) is arranged at a lower part of a substrate. The distributed Bragg reflector reflects light emitted from the light emitting structure. A metal reflective layer(41) is arranged at the lower part of the distributed Bragg reflector.
摘要翻译：目的：提供一种具有分布布拉格反射器的发光二极管，通过将顶部绝缘层和透明导电层形成折射率分级层来提高发光二极管的光提取效率。构成：发光结构（30）包括有源层（27）。顶部绝缘层（37）覆盖发光结构。分布式布拉格反射器（40）布置在基板的下部。分布式布拉格反射器反射从发光结构发射的光。金属反射层（41）布置在分布布拉格反射器的下部。

3. 发明申请

WO2012015153A3 LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管
公开(公告)号：WO2012015153A3
公开(公告)日：2012-04-19
申请号：PCT/KR2011003266
申请日：2011-05-02
申请人： SEOUL OPTO DEVICE CO LTD , SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
发明人： SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
IPC分类号： H01L33/10 , H01L33/46
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/42 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A light-emitting diode having a distributed Bragg reflector is disclosed. The light-emitting diode includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first layer and the second layer. A first distributed Bragg reflector (DBR) is arranged on a second surface of the substrate opposite to the first surface, the first DBR to reflect light emitted from the light-emitting structure. The first DBR has a reflectivity of at least 90% with respect to light of a first wavelength in a blue range, light of a second wavelength in a green range, and light of a third wavelength in a red range. The first DBR has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.
摘要翻译：公开了具有分布式布拉格反射器的发光二极管。发光二极管包括布置在衬底的第一表面上的发光结构，该发光结构包括第一半导体层，第二半导体层以及介于第一层和第二层之间的有源层。第一分布布拉格反射器（DBR）布置在基板的与第一表面相对的第二表面上，第一DBR反射从发光结构发射的光。第一DBR相对于蓝色范围中的第一波长的光，绿色范围中的第二波长的光和红色范围中的第三波长的光具有至少90％的反射率。第一DBR具有交替堆叠的SiO 2层和Nb 2 O 5层的层压结构。

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