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1. 发明授权

US10050065B2 Semiconductor element and display device using the same 有权
公开(公告)号：US10050065B2
公开(公告)日：2018-08-14
申请号：US15207191
申请日：2016-07-11
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12 , H01L23/31 , H01L29/417 , H01L29/423 , G02F1/1362 , H01L29/66 , H01L23/498 , G02F1/1335 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/1368
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

2. 发明授权

US09910334B2 Semiconductor device and fabrication method thereof 有权
公开(公告)号：US09910334B2
公开(公告)日：2018-03-06
申请号：US15248469
申请日：2016-08-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： H01L27/14 , G02F1/1368 , G02F1/1333 , G02F1/1362 , H01L27/12 , H01L27/32 , H01L29/45 , H01L29/786 , G02F1/1345
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

3. 发明申请

US20130221361A1 SEMICONDUCTOR DISPLAY DEVICE 有权
公开(公告)号：US20130221361A1
公开(公告)日：2013-08-29
申请号：US13857659
申请日：2013-04-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame
IPC分类号： H01L33/52
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

4. 发明授权

US11310457B2 Display device and method for manufacturing the same 有权
公开(公告)号：US11310457B2
公开(公告)日：2022-04-19
申请号：US16663403
申请日：2019-10-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H04N5/655 , H01L27/12 , H01L27/32 , H01L51/52 , H01L33/60 , G06F3/02 , H04N5/64 , H01L51/00 , H01L51/56
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

5. 发明申请

US20210098508A1 SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME 有权
公开(公告)号：US20210098508A1
公开(公告)日：2021-04-01
申请号：US17106095
申请日：2020-11-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L29/786 , H01L23/31 , H01L29/417 , H01L29/423 , G02F1/1362 , H01L27/32 , H01L29/66 , H01L23/498 , G02F1/1335 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/1368
摘要： A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor, a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

6. 发明授权

US10133139B2 Display device 有权
公开(公告)号：US10133139B2
公开(公告)日：2018-11-20
申请号：US14511197
申请日：2014-10-10
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Toru Takayama , Satoshi Murakami , Hajime Kimura
IPC分类号： G02F1/1368 , H01L27/32 , H01L51/52 , H05B33/04 , G02F1/1333 , G02F1/1362
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

7. 发明授权

US09105727B2 Semiconductor element and display device using the same 有权
标题翻译：半导体元件和使用其的显示装置
公开(公告)号：US09105727B2
公开(公告)日：2015-08-11
申请号：US14582242
申请日：2014-12-24
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
IPC分类号： H01L23/48 , H01L29/786
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线。在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，第二开口部设置在包括栅极绝缘膜，第一氮化物绝缘膜膜和第一氮化物绝缘膜，并且半导体通过第一开口部和第二开口部与布线连接。

8. 发明申请

US20150008439A1 LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20150008439A1
公开(公告)日：2015-01-08
申请号：US14333078
申请日：2014-07-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L27/32 , H01L29/16 , H01L29/786
摘要： The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.
摘要翻译：包括薄膜晶体管和发光元件的发光装置包括：栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，第三无机绝缘层上的阳极，与第三有机绝缘层重叠的第二有机绝缘层所述阳极的端部具有35度至45度的倾斜角度，在所述第二有机绝缘层的上表面和所述侧表面上的第四无机绝缘层，并且在所述阳极上具有开口，与所述阳极接触的有机化合物层和第四无机绝缘层并含有发光材料，以及与有机化合物层接触的阴极，其中第三和第四无机绝缘层包括氮化硅或氮化铝。

9. 发明授权

US08748895B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08748895B2
公开(公告)日：2014-06-10
申请号：US13922920
申请日：2013-06-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Satoshi Murakami , Mitsuaki Osame
IPC分类号： H01L27/12
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.
摘要翻译：公开了一种结合了显示装置的显示装置和电子装置。显示装置包括晶体管和晶体管上的平坦化膜。平坦化膜具有边缘部分为圆形的开口。显示装置还包括在平坦化膜上的第一电极和在第一电极上的有机树脂膜。有机树脂膜也具有边缘部分为圆形的开口。有机树脂膜位于平坦化膜的开口内。第一电极和晶体管通过导电膜彼此电连接。第一电极与导电膜的顶表面接触。在第一电极上设置有发光部件和第二电极。

10. 发明授权

US08709847B2 Method of fabricating display device 有权
标题翻译：制造显示装置的方法
公开(公告)号：US08709847B2
公开(公告)日：2014-04-29
申请号：US13755614
申请日：2013-01-31
申请人： Semiconductor Energy Laboratory Co., LTD.
发明人： Masahiko Hayakawa , Satoshi Murakami , Shunpei Yamazaki , Kengo Akimoto
IPC分类号： H01L21/00
CPC分类号： H01L33/44 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L29/78621 , H01L2924/0002 , H01L2924/00
摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.
摘要翻译：为了实现显示装置的操作功能的稳定性和电路设计中的设计余量的增加，在包括具有半导体元件的像素部分和设置有与基板上的半导体元件连接的像素电极的多个像素的显示装置中，半导体元件包括作为层间绝缘膜的光敏有机树脂膜，设置在感光性有机树脂膜上的第一开口部的内壁面被第二绝缘氮化物膜覆盖，设置在无机绝缘膜上的第二开口部设置在第一开口部的内侧，半导体和布线通过第一开口部和第二开口部连接，并且像素电极设置在活化层的下侧的层。

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