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1. 发明申请

WO1993005630A1 HARMONIC AND SUBHARMONIC ISOLATOR FOR PLASMA DISCHARGE 审中-公开
标题翻译：用于等离子体放电的谐波和次谐波隔离器
公开(公告)号：WO1993005630A1
公开(公告)日：1993-03-18
申请号：PCT/US1992007566
申请日：1992-09-08
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , MILLER, Paul, A.
IPC分类号： H05H01/46
CPC分类号： H01J37/32311 , H01J37/32174 , H01J37/32688 , H05H1/46
摘要： An isolator is disposed between a plasma reactor and its electrical energy source in order to isolate the reactor from the electrical energy source. The isolator operates as a filter to attenuate the transmission of harmonics of a fundamental frequency of the electrical energy source generated by the reactor from interacting with the energy source. By preventing harmonic and subharmonic interaction with the energy source, plasma conditions can be readily reproduced independent of the electrical characteristics of the electrical energy source and/or its associated coupling network.
摘要翻译：隔离器设置在等离子体反应器及其电能源之间，以将反应器与电能源隔离。隔离器用作滤波器，以衰减由反应器产生的电能源的基频的谐波的传输与能量源的相互作用。通过防止与能量源的谐波和次谐波相互作用，可以容易地再现等离子体条件，而不管电能源和/或其相关联的耦合网络的电特性。

2. 发明申请

WO1993001328A1 RAPID-SWITCHING ROTATING DISK REACTOR 审中-公开
标题翻译：快速切换旋转盘反应器
公开(公告)号：WO1993001328A1
公开(公告)日：1993-01-21
申请号：PCT/US1992004257
申请日：1992-05-20
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , GEYLING, Franz, T.
IPC分类号： C23C16/44
CPC分类号： C23C16/45508 , C23C16/455 , C23C16/45512 , C23C16/45519 , C23C16/45591 , Y10S438/976 , Y10T29/41
摘要： A rapid switching rotating disk reactor (25) has an elongated injector (16) for injecting an inert gas into the chamber (10) of a rotating disk reactor (25). The nozzle of the injector (7) is proximate to the center of the rotating wafer (12) for the purpose of providing an inert gas flow to produce an inert gas boundary layer above the wafer (12). Whenever the environment of the chamber is to be changed by an introduction of another fluid medium, the injector (16) is activated to provide an inert boundary layer attop the semiconductor wafer, wherein any processing caused by the reactive gases in the chamber (10) is prevented from occurring. Once the chamber (10) is filled with the subsequent fluid medium, the injector (16) is turned off in order for the next processing to commence.
摘要翻译：快速切换旋转盘式反应器（25）具有用于将惰性气体注入旋转盘式反应器（25）的腔室（10）中的细长喷射器（16）。喷射器（7）的喷嘴靠近旋转晶片（12）的中心，用于提供惰性气体流以在晶片（12）上方产生惰性气体边界层。每当通过引入另一种流体介质来改变室的环境时，喷射器（16）被激活，以在半导体晶片的顶部提供惰性边界层，其中由腔室（10）中的反应性气体引起的任何处理，被防止发生。一旦腔室（10）填充有随后的流体介质，则注射器（16）被关闭，以便开始下一个处理。

3. 发明申请

WO1992012474A1 INTELLIGENT MASS FLOW CONTROLLER 审中-公开
标题翻译：智能质量流量控制器
公开(公告)号：WO1992012474A1
公开(公告)日：1992-07-23
申请号：PCT/US1991006963
申请日：1991-09-24
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , ANDERSON, Richard, L.
IPC分类号： G05D07/06
CPC分类号： G05D7/0635 , Y10T137/7737 , Y10T137/7759 , Y10T137/7761
摘要： An intelligent mass flow controller for controlling the mass flow of gas to a semiconductor processing chamber. A sensing circuit measures a difference in temperature across a sensing tube and translates this difference to adjust a valve for controlling the mass flow. A microcontroller which includes a CPU, signal processing and software routines continually monitors the various parameters and provide 'on the fly' corrections, as well as providing diagnostics and record retention.

4. 发明申请

WO1994017449A1 PHASE SHIFTING MASK STRUCTURE WITH MULTILAYER OPTICAL COATING FOR IMPROVED TRANSMISSION 审中-公开
标题翻译：用于改进传输的多层光学涂层的相移立面结构
公开(公告)号：WO1994017449A1
公开(公告)日：1994-08-04
申请号：PCT/US1993011514
申请日：1993-11-29
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , VASUDEV, Prahalad, K. , LOW, Kah, Kuen
IPC分类号： G03F01/14
CPC分类号： G03F1/30 , G03F1/26 , Y10T428/24479
摘要： A multi-layer PSM structure with multi-layer optical coating disposed between a quartz substrate and a surrounding medium, which typically is air. The multi-layer coating is comprised of a high index of refraction material overlying the quartz and a lower index of refraction material overlying the first. The multi-layer coating essentially functions as an anti-reflective coating to reduce scattering and reflection at the interface boundaries.
摘要翻译：具有多层光学涂层的多层PSM结构，其设置在石英基板和通常为空气的周围介质之间。多层涂层由覆盖在石英上的高折射率材料和覆盖在第一层上的较低的折射率材料构成。多层涂层基本起到抗反射涂层的作用，以减少界面边界处的散射和反射。

5. 发明申请

WO1994017450A1 PHASE SHIFTING MASK STRUCTURE WITH ABSORBING/ATTENUATING SIDEWALLS FOR IMPROVED IMAGING AND METHOD OF FABRICATING PHASE SHIFTERS WITH ABSORBING/ATTENUATING SIDEWALLS 审中-公开
标题翻译：具有用于改进成像的吸收/衰减侧面的相移切片结构以及吸收/衰减侧面制造相位切换器的方法
公开(公告)号：WO1994017450A1
公开(公告)日：1994-08-04
申请号：PCT/US1993012094
申请日：1993-12-13
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , VASUDEV, Prahalad, K. , LOW, Kah, Kuen
IPC分类号： G03F01/14
CPC分类号： G03F1/26 , G03F1/32 , G03F1/34 , G03F1/38
摘要： A phase shifting mask has phase shifters in which the sidewalls of the shifters are coated with a light absorbing or attenuating material. The light absorption at the sidewalls reduces the edges scattering and improves the resolution by obtaining similar transmission profiles from phase shifted and unshifted regions of the PSM. A method of fabricating phase shifters with absorbing or attenuating sidewalls in order to inhibit or prevent light scattering at quartz-air interfaces is also provided. A quartz substrate is patterned and trenches are formed to provide "shifters". A metal film layer is formed along sidewalls of the trenches to provide the light absorbing characteristics. In one technique, the conformal metal layer is anisotropically etched while in another the metal layer is removed along with the photoresist by a lift-off technique.
摘要翻译：相移掩模具有移相器，其中移位器的侧壁涂覆有光吸收或衰减材料。在侧壁处的光吸收通过从PSM的相移和非移相区域获得相似的透射曲线来减少边缘散射并提高分辨率。还提供了制造具有吸收或衰减侧壁以便抑制或防止石英 - 空气界面处的光散射的移相器的方法。对石英衬底进行构图，形成沟槽以提供“移位器”。沿着沟槽的侧壁形成金属膜层以提供光吸收特性。在一种技术中，保形金属层被各向异性地蚀刻，而在另一种技术中，金属层通过剥离技术与光致抗蚀剂一起被去除。

6. 发明申请

WO1991015030A1 STAIRCASE SIDEWALL SPACER FOR IMPROVED SOURCE/DRAIN ARCHITECTURE 审中-公开
标题翻译：用于改进源/排水结构的平台式平台
公开(公告)号：WO1991015030A1
公开(公告)日：1991-10-03
申请号：PCT/US1991001619
申请日：1991-03-11
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , MANUKONDA, V., Reddy , SEIDEL, Thomas, E.
IPC分类号： H01L21/336
CPC分类号： H01L29/66492 , H01L21/823864 , H01L29/41783 , H01L29/6659 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Selective etching of a conformal nitride layer overlying a conformal oxide layer and a subsequent etching of the oxide layer provide for a staircase shaped sidewall spacer which is used to align source and drain regions during implantation. Extent of the implanted n-/n+ and/or p-/p+ regions within the substrate can be tightly controlled due to the tight dimensional tolerances obtained by the footprint of the spacer. Further the source/drain profiles can be utilized with elevated polysilicon and elevated polysilicon having subsequent salicidation.
摘要翻译：覆盖保形氧化物层的保形氮化物层的选择性蚀刻和随后的氧化物层的蚀刻提供用于在植入期间对准源极和漏极区域的阶梯形侧壁间隔物。由于通过间隔物的覆盖区获得的紧密尺寸公差，可以严格控制衬底内的注入的n / n +和/或p / p +区的范围。此外，源极/漏极分布可以与升高的多晶硅和升高的多晶硅一起用于随后的盐析。

7. 发明申请

WO1995008184A1 INTEGRATED BUILDING AND CONVEYING STRUCTURE FOR MANUFACTURING UNDER ULTRACLEAN CONDITIONS 审中-公开
标题翻译：一体化建筑和输送结构在超声波条件下制造
公开(公告)号：WO1995008184A1
公开(公告)日：1995-03-23
申请号：PCT/US1993011427
申请日：1993-11-24
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , SCOTT, Richard, G. , SHACKLETON, Craig, R. , ELLIS, Raymond, W.
IPC分类号： H01L21/00
CPC分类号： H01L21/67712 , H01L21/67727
摘要： A building houses a semiconductor manufacturing facility, which is circular in shape and is of a multi-story structure. A silo is located at the center for use in storing and transferring wafers to clean rooms disposed radially around the silo at each floor. Human access is not permitted in the silo and in the clean rooms in order to prevent contamination of the wafers. Due to the modularity of the clean room structures, clean rooms can be reconfigured easily without significant impact on the on-going manufacturing operation. The modularity also permits portions of the facility to be deactivated when not needed.
摘要翻译：一座建筑物是半圆形的制造设施，圆形的形状是多层结构。仓库位于中心，用于将晶片存储和转移到在每个楼层处放置在筒仓周围的洁净室。为了防止晶片的污染，在筒仓和洁净室中不允许人员进入。由于洁净室结构的模块化，洁净室可以轻松重新配置，而不会对正在进行的制造操作产生重大影响。模块化还允许设施的部分在不需要时被去激活。

8. 发明申请

WO1994002959A1 OPTIMIZED ECR PLASMA APPARATUS 审中-公开
标题翻译：优化ECR等离子体设备
公开(公告)号：WO1994002959A1
公开(公告)日：1994-02-03
申请号：PCT/US1993004132
申请日：1993-05-03
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , BERRY, Lee, A.
IPC分类号： H01J37/32
CPC分类号： H01J37/32238 , F16B2012/2018 , F16B2012/2045 , H01J37/32192 , H01J37/32266 , H01J37/32623 , H01J37/32678
摘要： The present invention describes a technique to control the radial profile of microwave power in an ECR plasma discharge. In order to provide for a uniform plasma density to a specimen, uniform energy absorption by the plasma is desired. By controlling the radial profile of the microwave power transmitted through the microwave window of a reactor, the profile of the transmitted energy to the plasma can be controlled in order to have uniform energy absorption by the plasma. An advantage of controlling the profile using the window transmission characteristics is that variations to the radial profile of microwave power can be made without changing the microwave coupler or reactor design.
摘要翻译：本发明描述了在ECR等离子体放电中控制微波功率的径向分布的技术。为了为样品提供均匀的等离子体密度，需要等离子体的均匀的能量吸收。通过控制通过反应器的微波窗口传递的微波功率的径向分布，可以控制向等离子体传输的能量的分布，以便等离子体具有均匀的能量吸收。使用窗口传输特性来控制轮廓的优点是可以在不改变微波耦合器或反应器设计的情况下对微波功率的径向轮廓进行变化。

9. 发明申请

WO1992006574A1 PNEUMATIC ENERGY FLUXMETER 审中-公开
标题翻译：气动能量流量计
公开(公告)号：WO1992006574A1
公开(公告)日：1992-04-16
申请号：PCT/US1991006962
申请日：1991-09-24
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , ANDERSON, Richard, L.
IPC分类号： H05H01/00
CPC分类号： H05H1/0068
摘要： A fluxmeter which provides for a pneumatic means for measuring an amount of plasma energy flux flowing into a semiconductor wafer provides for a non-electrical means of measuring energy flux. A bulb has one end exposed to the plasma while the opposite end is supported by a heat sink. When plasma is applied, gas pressure in the bulb changes due to a change in temperature. This change in gas pressure is measured to provide a direct correlation to a value of energy flux impinging on the fluxmeter.
摘要翻译：提供用于测量流入半导体晶片的等离子体能量的量的气动装置的通量计提供测量能量通量的非电气装置。灯泡的一端暴露于等离子体，而另一端由散热器支撑。当施加等离子体时，灯泡中的气体压力由于温度的变化而变化。测量气体压力的这种变化，以提供与通量计撞击的能量通量的直接相关性。

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