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1. 发明专利

JP2000294637A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000294637A
公开(公告)日：2000-10-20
申请号：JP10203099
申请日：1999-04-09
申请人： SEIKO EPSON CORP
发明人： IWAMURA NAOYUKI
IPC分类号： H01L21/302 , G03F7/40 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device by which a semiconductor device having a plug can be manufactured and a liquid chemical which is used for removing such a matter as the polymer, etc., adhering to the side wall surface of a metallic wiring layer can be prevented from entering a recess around the plug and dissolving the wiring layer. SOLUTION: A plug 32 is formed in the opening of an insulating film 12 upon which a barrier metallic layer 14 is stacked. Then a metallic wiring layer 18 and a metallic wiring layer protective film 24 composed of silicon dioxide, etc., are successively stacked upon the wiring layer 18. After the protective film 24 is formed, a photoresist is applied to the film 24. Then the protective film 18 and wiring layer 18 are dry-etched and, successively, the polymer, etc., which adhere to the protective film 24 and wiring layer 18 at the dry etching is removed with an amine-based alkaline solution, etc. Finally, the barrier metallic layer 14 is dry-etched by using the protective film 24 as a mask.

2. 发明专利

JPH08327959A TREATING DEVICE FOR WAFER AND SUBSTRATE AND TREATMENT METHOD THEREFOR AND TRANSFER DEVICE FOR WAFER AND SUBSTRATE 失效
公开(公告)号：JPH08327959A
公开(公告)日：1996-12-13
申请号：JP16452695
申请日：1995-06-08
申请人： SEIKO EPSON CORP
发明人： IWAMURA NAOYUKI , MORI YOSHIAKI , MIYASHITA TAKESHI , MIYAGAWA TAKUYA , YUDASAKA KAZUO
IPC分类号： G01R31/26 , G02F1/13 , H01L21/00 , H01L21/203 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/677 , H05H1/46 , H01L21/68
摘要： PURPOSE: To rationalize the process for treatment or inspection of wafer and substrate in production of semiconductor device and liquid crystal display panel and to improve the yield thereof. CONSTITUTION: A route for transporting the wafers 2 or the substrates is provided in its mid-way with a means 12 for generating gaseous discharge in a prescribed discharge gas under the atm. pressure or a pressure approximate thereto. The excited active species of the discharge gas formed by the means are brought into contact with the wafer surfaces and also the gaseous species of the discharge gas are adequately selected, thereby, the surface treatments, such as ashing, washing and hydrophilicity imparting to the wafers, are executed inline.

3. 发明专利

JPH08279495A METHOD AND SYSTEM FOR PLASMA PROCESSING 失效
公开(公告)号：JPH08279495A
公开(公告)日：1996-10-22
申请号：JP34440495
申请日：1995-12-05
申请人： SEIKO EPSON CORP
发明人： IWAMURA NAOYUKI , AOKI KOJI
IPC分类号： H05H1/46 , B08B7/00 , C23F4/00 , H01J37/32 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To enhance the in-plane uniformity, yield and processing rate of a plasma processing system. CONSTITUTION: A gas is irradiated with ultraviolet rays emitted from an ultraviolet lamp 24 through a thransparent window 22 of a gas introduction pipe 20 thus enhancing the excitation level of the gas. A plasma is then generated in a plasma region A using the gas having elevated excitation level by means of a first part of plasma generation electrodes 26 disposed in the downstream. The gas is excited again at a position where the activated gas is not deactivated by means of a second pair of plasma generation electrodes 30 disposed farther in the downstream thus producing a plasma. An object 1 is processed by active species in the plasma region A.

4. 发明专利

JP2000100795A PLASMA REACTOR 失效
公开(公告)号：JP2000100795A
公开(公告)日：2000-04-07
申请号：JP27212498
申请日：1998-09-25
申请人： SEIKO EPSON CORP
发明人： IWAMURA NAOYUKI
IPC分类号： H01L21/302 , C23C16/50 , C23C16/505 , C23F4/00 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To detect partial abnormal discharges or a short spell of abnormal discharge, by installing a detector for detecting voltage or currents in a transmission line for supplying high-frequency power, and monitoring the third higher harmonic compounds and the fifth higher harmonic compounds. SOLUTION: Since impedance matching between supply side and load side is not taken at abnormal discharge, waves which are opposite in phase are produced, and odd higher harmonics increase. So, when introducing a gas between an upper electrode 1 and a lower electrode and applying higher harmonics by a higher harmonic power source 3 so as to etch a wafer 5, this reactor monitors third higher harmonic components and fifth higher harmonic components of applied high frequency with a detector 4, and when this compound becomes higher than the reference value, it is detected as abnormal discharges. This reactor can detect partial abnormal discharge or a short spell of abnormal discharge by detecting the abnormal discharge from the intensity of the third higher harmonic components and fifth higher harmonic compounds of the applied high frequency.

5. 发明专利

JPH0974086A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JPH0974086A
公开(公告)日：1997-03-18
申请号：JP22953695
申请日：1995-09-06
申请人： SEIKO EPSON CORP
发明人： IWAMURA NAOYUKI
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To eliminate chargeup damage to a wafer or substrate and realize high speed processing in the plasma processing apparatus under the atmospheric pressure or the vacuum condition. SOLUTION: Gas is introduced into a reaction chamber from a gas-introducing port 10. In the reaction chamber, a couple of electrodes 11, 15 are opposed to each other and the electrode 11 is connected to a high frequency power supply 16 via a tuning circuit 18. The other electrode 15 is connected to the high frequency power supply and earth via a variable capacitor 20. Therefore, transfer of charges to the object to be processed can be limited by controlling electrostatic capacitance between the stage on which the object is placed and the earth to realize high speed processing and prevent chargeup damage to the object. Moreover, Plasma can be formed easily using the electrode for activating the discharge in addition to the electrode for processing the object.

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