专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO03024865A2 METHOD FOR PRODUCING MICRO-ELECTROMECHANICAL COMPONENTS 审中-公开
标题翻译：生产微机电元件的方法
公开(公告)号：WO03024865A2
公开(公告)日：2003-03-27
申请号：PCT/EP0209449
申请日：2002-08-23
申请人： SCHOTT GLAS , ZEISS STIFTUNG , LEIB JUERGEN , BIECK FLORIAN
发明人： LEIB JUERGEN , BIECK FLORIAN
IPC分类号： B81C1/00 , B81B20060101 , B81B7/00 , B81B7/02 , H01L21/00 , H01L21/76 , H01L21/8238 , H01L21/84 , H01L27/14 , H01L29/82
CPC分类号： B81C1/00301 , B81B2201/047 , B81B2207/096
摘要： The aim of the invention is to allow for the space-saving contacting of micro-electromechanical components. For this purpose, a micro-electromechanical component (27) is produced from a substrate (6) having a first face (2) and a second face (4), substantially opposite the first face (2), wherein at least the first face (2) comprises at least one micro-electromechanical component (5), by inserting in the substrate (6) at least one conducting channel (8) which interlinks the first face (2) with the second face (4).
摘要翻译：为了提供微机电元件的节省空间的接触，本发明提供（6）具有第一侧的衬底的微机电装置（27）（2）和所述第一侧中的一个（2）本质上是相反的第二其产生侧（4），其中，至少所述第一侧（2）的至少一个微机电元件（5）通过至少一个导电沟道（8）插入到基板（6），其中所述第一侧（2）连接到第二面（4）。

2. 发明申请

WO03024865A8 METHOD FOR PRODUCING MICRO-ELECTROMECHANICAL COMPONENTS 审中-公开
公开(公告)号：WO03024865A8
公开(公告)日：2003-12-24
申请号：PCT/EP0209449
申请日：2002-08-23
申请人： SCHOTT GLAS , ZEISS STIFTUNG , LEIB JUERGEN , BIECK FLORIAN
发明人： LEIB JUERGEN , BIECK FLORIAN
IPC分类号： B81C1/00 , B81B20060101 , B81B7/00 , B81B7/02 , H01L21/00 , H01L21/76 , H01L21/8238 , H01L21/84 , H01L27/14 , H01L29/82
CPC分类号： B81C1/00301 , B81B2201/047 , B81B2207/096
摘要： The aim of the invention is to allow for the space-saving contacting of micro-electromechanical components. For this purpose, a micro-electromechanical component (27) is produced from a substrate (6) having a first face (2) and a second face (4), substantially opposite the first face (2), wherein at least the first face (2) comprises at least one micro-electromechanical component (5), by inserting in the substrate (6) at least one conducting channel (8) which interlinks the first face (2) with the second face (4).

3. 发明申请

WO2010082094A3 METHOD AND APPARATUS FOR TESTING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于测试半导体波形的方法和装置
公开(公告)号：WO2010082094A3
公开(公告)日：2012-03-29
申请号：PCT/IB2009055351
申请日：2009-11-26
申请人： DOUBLECHECK SEMICONDUCTORS PTE LTD , BIECK FLORIAN
发明人： BIECK FLORIAN
IPC分类号： G01R1/073
CPC分类号： G01R31/2887
摘要： A method for testing a semiconductor wafer comprises providing a semiconductor wafer. The semiconductor wafer comprises a protruding annular rim, a first redistribution structure disposed on the front side of the semiconductor wafer, a second redistribution structure disposed on the rear side of the semiconductor wafer within the protruding annular rim and a plurality of vias extending from the front side to the rear side. A first probe is contacted to the first redistribution structure on the front side and a second probe is contacted to the second redistribution structure on the rear side. The first probe is in contact with the first redistribution structure and the second probe is in contact with the second redistribution structure at the same time.
摘要翻译：一种用于测试半导体晶片的方法包括提供半导体晶片。半导体晶片包括突出的环形边缘，设置在半导体晶片的正面上的第一再分配结构，设置在突出环形边缘内的半导体晶片的后侧上的第二再分布结构和从前面延伸的多个通孔侧到后方第一探针与前侧上的第一再分布结构接触，并且第二探针与后侧的第二再分配结构接触。第一探针与第一再分布结构接触，第二探针同时与第二再分布结构接触。

4. 发明申请

WO2009141811A2 SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：半导体晶片及其制造方法
公开(公告)号：WO2009141811A2
公开(公告)日：2009-11-26
申请号：PCT/IB2009052163
申请日：2009-05-23
申请人： BIECK FLORIAN , SUKMADEVI ASFHANDY CAROLINDA , SPILLER SVEN-MANFRED
发明人： BIECK FLORIAN , SUKMADEVI ASFHANDY CAROLINDA , SPILLER SVEN-MANFRED
IPC分类号： H01L21/68 , H01L21/302 , H01L21/3205
CPC分类号： H01L21/304 , H01L21/02013 , H01L21/02035 , H01L21/6704 , H01L21/67075 , H01L21/67086 , H01L21/78
摘要： A semiconductor wafer (12) with a thinned central portion (2) has a first side (3) and a second side (4) and at least one reinforcement structure for increasing the radial bending resistance of the semiconductor wafer (12). The reinforcement structure provides at least one passage (10) for a fluid flow between an inner face (9) of said one reinforcement structure towards an outer face (8) of the reinforcement structure. The passages (10) are manufactured in a z-direction coming from above the semiconductor wafer (12) in a direction which is essentially perpendicular to the surface, e.g. to the first side (3), of the semiconductor wafer (12).
摘要翻译：具有变薄的中心部分（2）的半导体晶片（12）具有第一侧面（3）和第二侧面（4）以及用于增加半导体晶片（12）的径向抗弯曲性的至少一个加强结构。加强结构提供至少一个通道（10），用于在所述一个加强结构的内表面（9）之间朝向加强结构的外表面（8）流动。通道（10）沿着基本上垂直于表面的方向例如半导体晶片（12）的上方沿z方向制造。到半导体晶片（12）的第一侧（3）。

5. 发明申请

WO2012020382A3 MODIFIED MASK FOR PHOTOLITHOGRAPHY OF A WAFER WITH RECESS, METHOD FOR PRODUCING SUCH A MASK AND METHOD FOR PHOTOLITHOGRAPHY OF A WAFER WITH RECESS 审中-公开
标题翻译：用于具有凹陷的波形的光刻技术的修改掩模，用于产生掩模的方法和用于具有凹陷的波形的光刻法的方法
公开(公告)号：WO2012020382A3
公开(公告)日：2012-04-05
申请号：PCT/IB2011053565
申请日：2011-08-10
申请人： DOUBLECHECK SEMICONDUCTORS GMBH , BIECK FLORIAN
发明人： BIECK FLORIAN
IPC分类号： G03F1/38
CPC分类号： G03F1/00 , G03F1/14 , G03F1/50 , G03F1/60
摘要： A mask for photolithography of a semiconductor wafer is dis- closed. The mask comprises a protrusion section that pro- trudes from a handling section of the mask. An outer shape of the handling section is provided to enable handling by a mask aligner device. The protrusion has a face surface that is provided at a level which is different from a face surface area of the handling section.
摘要翻译：封闭半导体晶片的光刻掩模。掩模包括从掩模的处理部分突出的突出部分。提供处理部的外形，以使得能够通过掩模对准装置进行处理。突出部具有设置在与处理部的面部表面不同的水平面上的面部。

6. 发明申请

WO2009141740A3 SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：半导体晶片及其制造方法
公开(公告)号：WO2009141740A3
公开(公告)日：2011-05-05
申请号：PCT/IB2009050231
申请日：2009-01-22
申请人： BIECK FLORIAN , SUKMADEVI ASFHANDY CAROLINDA , SPILLER SVEN-MANFRED
发明人： BIECK FLORIAN , SUKMADEVI ASFHANDY CAROLINDA , SPILLER SVEN-MANFRED
IPC分类号： H01L21/02 , B24B1/00 , H01L21/304
CPC分类号： H01L21/304 , H01L21/02013 , H01L21/02035 , H01L21/6704 , H01L21/67075 , H01L21/67086 , H01L21/78
摘要： Semiconductor wafer and method for producing same A semiconductor wafer (12) with a thinned central portion (2) has a first side (3) and a second side (4) and at least one reinforcement structure for increasing the radial bending resistance of the semiconductor wafer (12). The reinforcement structure provides at least one passage (10) for a fluid flow between an inner face (9) of said one reinforcement structure towards an outer face (8) of the reinforcement structure.
摘要翻译：半导体晶片及其制造方法具有变薄的中心部分（2）的半导体晶片（12）具有第一侧（3）和第二侧（4）和至少一个用于增加半导体的径向抗弯曲性的加强结构晶片（12）。加强结构提供至少一个通道（10），用于在所述一个加强结构的内表面（9）之间朝向加强结构的外表面（8）流动。

7. 发明专利

DE10222960A1 Making electronic component comprising semiconductor elements with device for sensing or emitting 未知
公开(公告)号：DE10222960A1
公开(公告)日：2003-12-11
申请号：DE10222960
申请日：2002-05-23
申请人： SCHOTT GLAS
发明人： LEIB JUERGEN , BIECK FLORIAN
IPC分类号： H01L21/50 , H01L21/78
摘要： A die (5) is prepared on a wafer. A structured support (9) is formed. Its structure (11) is functional in conjunction with the device acting as a sensor or emitter (i.e. of radiation). Wafer and support are joined, with the active sensor- or emitter side of the die facing the support. The die is separated. An Independent claim is included for the corresponding electronic component.

8. 发明专利

DE10225373A1 Integrated circuit component encased in carrier material has contacts which are connected by channels through a thinned under layer 未知
公开(公告)号：DE10225373A1
公开(公告)日：2003-04-30
申请号：DE10225373
申请日：2002-06-06
申请人： SCHOTT GLAS
发明人： BIECK FLORIAN , LEIB JUERGEN
IPC分类号： B81B7/00 , H01L21/56 , H01L21/68 , H01L23/31 , H01L23/48 , H01L27/146 , H01L21/60 , H01L23/50
摘要： An integrated circuit component (11) encased in carrier material has connections (12) in an upper surface of the carrier for each integrated circuit. This surface is then covered and the carrier thinned from below. Contact points in the lower face are directly connected to the connections by channels.

9. 发明专利

AU2002342623A1 METHOD FOR PRODUCING ELECTRONIC COMPONENTS 未知
公开(公告)号：AU2002342623A1
公开(公告)日：2003-03-10
申请号：AU2002342623
申请日：2002-08-26
申请人： SCHOTT GLAS
发明人： LEIB JURGEN , BIECK FLORIAN
IPC分类号： H01L27/14 , H01B13/00 , H01L20060101 , H01L25/16 , H01L31/02 , H01L31/0232 , H01L33/00
摘要： In order to achieve an integration of functional structures into the housing of electronic components, provision is made of a method for producing an electronic component comprising at least one semiconductor element having at least one sensor-technologically active and/or emitting device on at least one side, the method comprising the following steps: provision of at least one die on a wafer, production of at least one patterned support having at least one structure which is functional for the sensor-technologically active and/or emitting device, joining together of the wafer with the at least one support, so that that side of the die which has the sensor-technologically active and/or emitting device faces the support, separation of the die.

10. 发明专利

DE10222609A1 未知
公开(公告)号：DE10222609A1
公开(公告)日：2003-11-06
申请号：DE10222609
申请日：2002-05-23
申请人： SCHOTT GLAS
发明人： LEIB JUERGEN , BIECK FLORIAN , MUND DIETRICH
IPC分类号： G02B3/00 , B81C1/00 , B81C3/00 , C03B19/00 , C03C4/12 , C03C14/00 , C03C15/00 , C03C17/02 , C03C17/34 , C03C27/02 , C23C14/10 , H01L21/027 , H01L21/306 , H01L21/3065 , H01L21/312 , H01L21/316 , H01L21/50 , H01L21/56 , H01L21/768 , H01L23/00 , H01L23/02 , H01L23/10 , H01L23/29 , H01L23/31 , H01L23/48 , H01L23/498 , H01L51/50 , H01L51/52 , H05B33/04 , H05B33/10 , H05B33/24 , H05B33/26 , H05B33/28 , H05K3/28 , C23C14/24
摘要： A conductive layer (13) is formed on a substrate (3). Another conductive layer (17) is formed over an organic electro-optical material layer (15) provided on the conductive layer (13). The layer structure (5) comprising the conductive layers (13,17) and organic electro-optical material layer, is covered with a layer of vitreous structure. Independent claims are also included for the following: (1) organic electro-optical element; and (2) device for producing organic electro-optical element.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式