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1. 发明申请

WO2015094707A1 ASYMMETRIC STATE DETECTION FOR NON-VOLATILE STORAGE 审中-公开
标题翻译：非挥发性储存的非对称状态检测
公开(公告)号：WO2015094707A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/068717
申请日：2014-12-05
申请人： SANDISK TECHNOLOGIES INC.
发明人： PATEL, Rohan , KOH, Pao-Ling , TAM, Eugene
IPC分类号： G11C11/56 , G11C16/34 , G11C29/02
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/10 , G11C16/26 , G11C16/3454 , G11C29/025 , G11C2029/1202 , G11C2211/5621
摘要： Techniques are disclosed herein for determining whether there is a defect that occurred as a result of programming non-volatile storage elements. Example defects include: broken word lines, control gate to substrate shorts, word line to word line shorts, double writes, etc. The memory cells may be programmed such that there will be a substantially even distribution of the memory cells in different data states. After programming, the memory cells are sensed at one or more reference levels. Two sub-groups of memory cells are strategically formed based on the sensing to enable detection of defects in a simple and efficient manner. The sub-groups may have a certain degree of separation of the data states to avoid missing a defect. The number of memory cells in one sub-group is compared with the other. If there is a significant imbalance between the two sub-groups, then a defect is detected.
摘要翻译：本文公开了用于确定是否存在作为编程非易失性存储元件的结果而发生的缺陷的技术。示例性缺陷包括：破碎的字线，控制栅极到衬底短路，字线到字线短路，双写等。存储器单元可以被编程，使得在不同数据状态下将存在基本均匀的存储器单元的分布。在编程之后，在一个或多个参考级别感测存储器单元。基于感测来战略地形成两个存储单元子组，以便以简单和有效的方式检测缺陷。子组可能具有一定程度的数据状态分离，以避免丢失缺陷。将一个子组中的存储单元的数量与另一个子组进行比较。如果两个子组之间存在显着的不平衡，则检测到缺陷。

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