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1. 发明申请

WO2012155345A1 WATERFALL WIRE BONDING 审中-公开
标题翻译：水管接头
公开(公告)号：WO2012155345A1
公开(公告)日：2012-11-22
申请号：PCT/CN2011/074234
申请日：2011-05-18
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , LU, Zhong , YU, Fen , CHIU, Chin Tien , YU, Cheeman , XIAO, Fuqiang
发明人： LU, Zhong , YU, Fen , CHIU, Chin Tien , YU, Cheeman , XIAO, Fuqiang
IPC分类号： H01L23/48 , H01L23/488
CPC分类号： H01L23/49866 , H01L21/768 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2224/03013 , H01L2224/03614 , H01L2224/04042 , H01L2224/05026 , H01L2224/05124 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06145 , H01L2224/06155 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45565 , H01L2224/45664 , H01L2224/48091 , H01L2224/48096 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48247 , H01L2224/48456 , H01L2224/48465 , H01L2224/4847 , H01L2224/48471 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/49175 , H01L2224/73265 , H01L2224/78301 , H01L2224/78349 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85399 , H01L2224/85948 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01079 , H01L2924/20104 , H01L2924/20105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/00 , H01L2924/00012 , H01L2224/48095
摘要： A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.
摘要翻译：公开了一种用于半导体器件的引线接合结构。导线接合结构包括接合焊盘; 以及与所述接合焊盘相互扩散的连续长度的线，所述线将所述接合焊盘与第一电接触和与所述第一电接触不同的第二电接触电耦合。

2. 发明申请

WO2012092707A1 CONTINUOUS WIRE BONDING 审中-公开
标题翻译：连续接线
公开(公告)号：WO2012092707A1
公开(公告)日：2012-07-12
申请号：PCT/CN2011/070019
申请日：2011-01-04
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , LU, Zhong , YU, Fen , CHIU, Chin Tien , YU, Cheeman , XIAO, Fuqiang
发明人： LU, Zhong , YU, Fen , CHIU, Chin Tien , YU, Cheeman , XIAO, Fuqiang
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： B23K20/005 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L25/0657 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48147 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48479 , H01L2224/48499 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48844 , H01L2224/49175 , H01L2224/78301 , H01L2224/85051 , H01L2224/85181 , H01L2224/85205 , H01L2224/85986 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/20105 , H01L2924/00 , H01L2224/48824 , H01L2224/48744 , H01L2924/00015 , H01L2924/01202 , H01L2924/01203 , H01L2224/4554
摘要： A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; a conductive bump disposed on the bonding pad, the conductive bump including a concave top surface; and a continuous length of wire mutually diffused with the concave top surface of the conductive bump. The wire electrically couples the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.
摘要翻译：公开了一种用于半导体器件的引线接合结构。引线接合结构包括接合焊盘; 布置在所述焊盘上的导电凸块，所述导电凸块包括凹顶表面; 以及与导电凸块的凹顶表面相互扩散的连续长度的线。导线将接合焊盘与第一电触头和不同于第一电触点的第二电接触电耦合。

3. 发明申请

WO2013049965A1 DRAGONFLY WIRE BONDING 审中-公开
公开(公告)号：WO2013049965A1
公开(公告)日：2013-04-11
申请号：PCT/CN2011/080535
申请日：2011-10-08
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , LU, Zhong , CHIU, Chin Tien , XIAO, Fuqiang , YU, Cheeman , GU, Wei , JIA, Jian
发明人： LU, Zhong , CHIU, Chin Tien , XIAO, Fuqiang , YU, Cheeman , GU, Wei , JIA, Jian
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L24/48 , H01L24/05 , H01L24/45 , H01L24/49 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05124 , H01L2224/05553 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/451 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45565 , H01L2224/45664 , H01L2224/4809 , H01L2224/48137 , H01L2224/48139 , H01L2224/48147 , H01L2224/48465 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/48799 , H01L2224/48844 , H01L2224/49175 , H01L2224/78301 , H01L2224/85181 , H01L2224/85205 , H01L2924/01029 , H01L2924/01047 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A wire bonded structure is disclosed. The wire bonded structure comprises: a continuous length of wire comprising a first portion for electrically coupling a bonding pad with a first electrical contact, an opposite second portion for electrically coupling the bonding pad with a second electrical contact different from the first electrical contact, and a middle portion between the first portion and the second portion. An upper part of the middle portion folded over a lower part of the middle portion so as to form a first bond between the lower part and the bonding pad and a second bond between the upper part and the lower part. The first bond substantially overlaps the second bond.
摘要翻译：公开了引线接合结构。导线接合结构包括：连续长度的导线，其包括用于将接合焊盘与第一电接触电耦合的第一部分，用于将接合焊盘与不同于第一电触点的第二电触点电耦合的相对的第二部分，以及第一部分和第二部分之间的中间部分。中间部分的上部折叠在中间部分的下部，以在下部和接合焊盘之间形成第一接合，并且在上部和下部之间形成第二接合。第一键大体上与第二键重叠。

4. 发明申请

WO2013155681A1 SLOPE DIE STACK 审中-公开
标题翻译：斜坡堆叠
公开(公告)号：WO2013155681A1
公开(公告)日：2013-10-24
申请号：PCT/CN2012/074255
申请日：2012-04-18
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , CHIU, Chin-Tien , YU, Cheeman , LU, Zhong , YU, Fen , WANG, Xu
发明人： CHIU, Chin-Tien , YU, Cheeman , LU, Zhong , YU, Fen , WANG, Xu
IPC分类号： H01L25/00
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/73265 , H01L2224/92247 , H01L2225/06506 , H01L2225/06562 , H01L2924/00012
摘要： A semiconductor device comprises a substrate and at least two groups of semiconductor dies stacked above the substrate. Each group of semiconductor dies includes at least a bottom and a top semiconductor die. Each semiconductor die comprises at least one bonding pad aligned along a first edge of the semiconductor die. The at least two groups of semiconductor dies comprise an underlying group of semiconductor dies and an overlying group of semiconductor dies. The bottom semiconductor die of the underlying group is disposed on the substrate while the bottom semiconductor die of the overlying group is disposed directly on the top semiconductor die of the underlying group. Within each group, the first edge of the top semiconductor die is offset from the first edge of the bottom semiconductor die by a group offset length in a first direction. The first edge of the bottom semiconductor die of the overlying group is shifted from the first edge of the bottom semiconductor die of the underlying group by a shift length Lshift in the first direction. The group offset length Lgoffset of the underlying group is greater than or equal to the shift length Lshift of the overlying group.
摘要翻译：半导体器件包括衬底和堆叠在衬底上的至少两组半导体管芯。每组半导体管芯至少包括底部和顶部半导体管芯。每个半导体管芯包括沿着半导体管芯的第一边缘对准的至少一个接合焊盘。所述至少两组半导体管芯包括下面的半导体管芯组和半导体管芯的上覆组。下面的组的底部半导体管芯设置在衬底上，而覆盖组的底部半导体管芯直接设置在下面的组的顶部半导体管芯上。在每个组内，顶部半导体管芯的第一边缘沿着第一方向偏离第一半导体管芯的第一边缘的组偏移长度。覆盖组的底部半导体管芯的第一边缘从第一方向的移位长度Lshift移位到下层组的底部半导体管芯的第一边缘。基础组的组偏移长度Lgoffset大于或等于上覆组的移位长度Lshift。

5. 发明申请

WO2013086741A1 EMI SHIELDING AND THERMAL DISSIPATION FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的EMI屏蔽和热释放
公开(公告)号：WO2013086741A1
公开(公告)日：2013-06-20
申请号：PCT/CN2011/084137
申请日：2011-12-16
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , FU, Peng , LUO, Shan , LU, Zhong , QIAN, Kaiyou , CHIU, Chin Tien , YU, Cheeman , TAKIAR, Hem , BAI, Ye
发明人： FU, Peng , LUO, Shan , LU, Zhong , QIAN, Kaiyou , CHIU, Chin Tien , YU, Cheeman , TAKIAR, Hem , BAI, Ye
IPC分类号： H01L21/56 , H01L21/44 , H01L23/34 , H01L23/552
CPC分类号： H01L23/552 , H01L21/561 , H01L21/565 , H01L21/566 , H01L23/4334 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L2223/5442 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/1434 , H01L2924/181 , H01L2924/3025 , H01L2924/00012 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.
摘要翻译：公开了一种包括屏蔽电磁辐射和/或耗散热的金属层的存储器件，以及制造存储器件的方法。金属层形成在金属层转移组件上。将金属层转移组件和未封装的存储器件放置在模具中并封装。在模塑料的包封和固化期间，金属层从屏蔽转移到封装的存储器件。

6. 发明申请

WO2013029273A1 METHODS FOR FORMING COLOR IMAGES ON MEMORY DEVICES AND MEMORY DEVICES FORMED THEREBY 审中-公开
标题翻译：在存储器件和形成的存储器件上形成彩色图像的方法
公开(公告)号：WO2013029273A1
公开(公告)日：2013-03-07
申请号：PCT/CN2011/079283
申请日：2011-09-02
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , FU, Peng , LU, Zhong , CHIU, Chin-Tien , YU, Cheeman , CHEN, Matthew , JIANG, Weiting
发明人： FU, Peng , LU, Zhong , CHIU, Chin-Tien , YU, Cheeman , CHEN, Matthew , JIANG, Weiting
IPC分类号： H01L23/544
CPC分类号： H01L21/565 , H01L21/56 , H01L21/561 , H01L21/566 , H01L23/28 , H01L23/544 , H01L23/552 , H01L24/73 , H01L24/97 , H01L2223/54406 , H01L2223/5442 , H01L2223/54433 , H01L2223/54486 , H01L2224/16225 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2924/1431 , H01L2924/1434 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3025 , H01L2224/81 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A memory device including graphical content and a method of making the memory device with graphical content are disclosed. The graphical content is formed on a release media. The release media and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the graphical content is transferred from the release media to the encapsulated memory device.
摘要翻译：公开了一种包括图形内容的存储设备和使具有图形内容的存储设备的方法。图形内容形成在释放介质上。将释放介质和未封装的存储器件放置在模具中并封装。在模塑料的包封和固化期间，图形内容从释放介质转移到封装的存储器件。

7. 发明申请

WO2013007029A1 CHIP-ON-PACKAGE STRUCTURE FOR MULTIPLE DIE STACKS 审中-公开
标题翻译：多芯片堆叠芯片封装结构
公开(公告)号：WO2013007029A1
公开(公告)日：2013-01-17
申请号：PCT/CN2011/077134
申请日：2011-07-14
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , LIAO, Chih Chin , CHIU, Chin-Tien , YU, Cheeman , UPADHYAYULA, Suresh Kumar , LI, Wen Cheng , LU, Zhong
发明人： LIAO, Chih Chin , CHIU, Chin-Tien , YU, Cheeman , UPADHYAYULA, Suresh Kumar , LI, Wen Cheng , LU, Zhong
IPC分类号： H01L25/065 , H01L25/16 , H01L25/18 , H01L25/00
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2225/06562 , H01L2924/01322 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A multi-die semiconductor device (100) is disclosed. The device (100) may include one or more first-sized dies on a substrate (104) and one or more second-sized dies (126) affixed over the one or more first-sized dies. The second-sized die (126) may have a larger footprint than the first-sized die. An internal molding compound (120) may be provided on the substrate (104) having a footprint the same size as the second-sized die (126). The second-sized die (126) may be supported on the internal molding compound (120). Thereafter, the first and second-sized dies and the internal molding compound (120) may be encapsulated in an external molding compound.
摘要翻译：公开了一种多芯片半导体器件（100）。装置（100）可以包括在一个或多个第一尺寸的模具上的衬底（104）上的一个或多个第一尺寸的模具和一个或多个第二尺寸的模具（126）。第二尺寸的模具（126）可以具有比第一尺寸的模具更大的占地面积。可以在衬底（104）上提供内部模制化合物（120），其具有与第二尺寸模具（126）相同尺寸的足迹。第二尺寸的模具（126）可以被支撑在内部模塑料（120）上。此后，第一和第二尺寸的模具和内部模塑料（120）可以封装在外部模塑料中。

8. 发明申请

WO2013166641A1 SEMICONDUCTOR DIE LAMINATING DEVICE WITH INDEPENDENT DRIVES 审中-公开
标题翻译：具有独立驱动器的半导体封装设备
公开(公告)号：WO2013166641A1
公开(公告)日：2013-11-14
申请号：PCT/CN2012/075126
申请日：2012-05-07
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , GU, Wei , LU, Zhong , YU, Cheeman , CHIU, Chin-Tien , TAI, En-Yong , NI, Min
发明人： GU, Wei , LU, Zhong , YU, Cheeman , CHIU, Chin-Tien , TAI, En-Yong , NI, Min
IPC分类号： H01L21/67
CPC分类号： H01L24/75 , H01L21/561 , H01L21/565 , H01L23/3107 , H01L23/3121 , H01L23/544 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L2223/5442 , H01L2223/54426 , H01L2223/54486 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/49 , H01L2224/73265 , H01L2224/753 , H01L2224/75301 , H01L2224/75702 , H01L2224/75753 , H01L2224/7598 , H01L2224/83132 , H01L2224/83193 , H01L2224/83203 , H01L2224/83856 , H01L2224/83862 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/12042 , H01L2924/181 , H01L2224/83 , H01L2924/00012 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A laminating device (230) and method are disclosed for laminating semiconductor die (220) on substrates on a panel (200) of substrates. The laminating device (230) includes lamination units (234,236,238,240) that operate independently of each other so that a row or column of semiconductor die (220) may be independently laminated onto a row or column of substrates simultaneously.
摘要翻译：公开了用于将基板上的半导体管芯（220）层压在基板（200）上的层压装置（230）和方法。层压装置（230）包括层叠单元（234,236,238,240），其彼此独立地操作，使得半导体管芯（220）的行或列可以独立地层压到基板的行或列上。

9. 发明申请

WO2014063281A1 SEMICONDUCTOR DEVICE INCLUDING STACKED BUMPS FOR EMI/RFI SHIELDING 审中-公开
标题翻译：半导体器件，包括用于EMI / RFI屏蔽的堆叠式电池
公开(公告)号：WO2014063281A1
公开(公告)日：2014-05-01
申请号：PCT/CN2012/083297
申请日：2012-10-22
申请人： SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , XIAO, Fuqiang , LU, Zhong , FU, Peng , TAI, Enyong , CHIU, Chin Tien , YU, Cheeman
发明人： XIAO, Fuqiang , LU, Zhong , FU, Peng , TAI, Enyong , CHIU, Chin Tien , YU, Cheeman
IPC分类号： H01L23/552 , H01L23/482 , H01L21/50 , H01L21/60
CPC分类号： H01L23/552 , H01L21/561 , H01L21/565 , H01L21/566 , H01L23/3128 , H01L24/13 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/06135 , H01L2224/1134 , H01L2224/1308 , H01L2224/32145 , H01L2224/32225 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48644 , H01L2224/48655 , H01L2224/48991 , H01L2224/49175 , H01L2224/49429 , H01L2224/73207 , H01L2224/73265 , H01L2224/85207 , H01L2224/85444 , H01L2224/85455 , H01L2224/85951 , H01L2224/92247 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06537 , H01L2225/06562 , H01L2225/06568 , H01L2225/06589 , H01L2924/1433 , H01L2924/1434 , H01L2924/1438 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/85
摘要： The present disclosure relates to a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device comprises: a substrate, a semiconductor die disposed above the substrate, and a bonding member. The substrate further comprises a bonding finger. The semiconductor die further comprises a first and an adjacent second bonding pads. The bonding member further comprises a single bonding wire having a ball disposed on a first end that electrically connects the first bonding pad and the second bonding pad and an opposite second end bonded directly on the bonding finger.
摘要翻译：本公开涉及半导体器件和制造半导体器件的方法。半导体器件包括：衬底，设置在衬底上方的半导体管芯和接合构件。基板还包括粘接指。半导体管芯还包括第一和相邻的第二接合焊盘。接合构件还包括单个接合线，其具有设置在电连接第一接合焊盘和第二接合焊盘的第一端上的球，以及直接接合在接合指状物上的相对的第二端。

10. 发明申请

WO2012045246A1 PRE-TREATMENT OF MEMORY CARDS FOR BINDING GLUE AND OTHER CURABLE FLUIDS 审中-公开
标题翻译：预处理用于结合玻璃和其他可固化流体的记忆卡
公开(公告)号：WO2012045246A1
公开(公告)日：2012-04-12
申请号：PCT/CN2011/075434
申请日：2011-06-08
申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. , SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD. , POMERANTZ, Itzhak , KUMAR, Shiv , MILLER, Robert , CHIU, Chin-Tien , FU, Peng , YU, Cheeman , TAKIAR, Hem , TUNG, Chih-Chiang , QIAN, Kaiyou , YAIRI, Rahav
发明人： POMERANTZ, Itzhak , KUMAR, Shiv , MILLER, Robert , CHIU, Chin-Tien , FU, Peng , YU, Cheeman , TAKIAR, Hem , TUNG, Chih-Chiang , QIAN, Kaiyou , YAIRI, Rahav
IPC分类号： G06K19/07
CPC分类号： H05K5/0252 , G06K19/07 , Y10T428/239 , Y10T428/24479 , Y10T428/2457 , Y10T428/24802
摘要： A memory device is disclosed including at least one surface pre-treated to roughen the surface for better adhesion of a curable fluid such as glue or ink on the surface. The surface of the memory device may be pre-treated by scoring lines in the surface with a laser or by forming discrete deformations with a particle blaster. The surface may also be roughened by providing a roughened pattern on a mold plate during an encapsulation process. In further examples, the surface may be chemically pre-treated to roughen the surface and/or increase the adhesion energy of the surface.
摘要翻译：公开了一种记录装置，其包括至少一个经过预处理的表面以粗糙化表面，以便在表面上更好地粘附诸如胶水或墨水的可固化流体。存储器件的表面可以通过用激光在表面上刻划线或者通过用粒子喷射器形成离散的变形来预处理。在封装过程中，通过在模板上提供粗糙图案也可以使表面粗糙化。在另外的实施例中，表面可以被化学预处理以使表面粗糙化和/或增加表面的粘附能。

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