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    • 1. 发明申请
    • MEMORY DEVICES AND METHODS
    • 存储器件和方法
    • WO2009116715A1
    • 2009-09-24
    • PCT/KR2008/006190
    • 2008-10-20
    • SAMSUNG ELECTRONICS CO., LTD.
    • YU, DonghunCHO, Kyoung LaeKANG, DongkuCHAE, Dong HyukKONG, Jun Jin
    • G11C16/34
    • G11C16/26G06F11/1072G11C11/5628G11C11/5642G11C29/00G11C2029/0411G11C2211/5621
    • Disclosed are a memory device and a memory data reading method. The memory device may include a multi-bit cell array, a threshold voltage detecting unit configured to detect first threshold voltage intervals including threshold voltages of multi-bit cells of the multi-bit cell array from among a plurality of threshold voltage intervals, a determination unit configured to determine data of a first bit layer based on the detected first threshold voltage intervals, and an error detection unit configured to detect an error bit of the data of the first bit layer. In this instance, the determination unit may determine data of a second bit layer using a second threshold voltage interval having a value of the first bit layer different from the detected error bit and being nearest to a threshold voltage of a multi-bit cell corresponding to the detected error bit.
    • 公开了一种存储器件和存储器数据读取方法。 存储器件可以包括多位单元阵列,阈值电压检测单元,被配置为从多个阈值电压间隔中检测包括多位单元阵列的多位单元的阈值电压的第一阈值电压间隔, 单元,被配置为基于检测到的第一阈值电压间隔来确定第一位层的数据;以及错误检测单元,被配置为检测第一位层的数据的错误位。 在这种情况下,确定单元可以使用具有与检测到的错误位不同的第一位层的值的第二阈值电压间隔来确定第二位层的数据,并且最接近对应于多个位单元的阈值电压 检测到错误位。
    • 2. 发明申请
    • MEMORY DEVICE AND MEMORY DATA READ METHOD
    • 存储器件和存储器数据读取方法
    • WO2009104855A1
    • 2009-08-27
    • PCT/KR2008/006187
    • 2008-10-20
    • SAMSUNG ELECTRONICS CO., LTD.
    • SONG, Seung-HwanEUN, HeeseokYU, DonghunKONG, Jun Jin
    • G11C16/04
    • G11C16/26G11C11/5642G11C29/00
    • Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell.
    • 提供的是存储器件和存储器数据读取方法。 方法设备可以包括:多比特单元阵列; 判定单元,其可以使用第一判定值来检测所述多比特单元阵列的多比特单元的阈值电压以从所述检测到的阈值电压中确定第一数据; 可以检测第一数据的错误位的错误检测器; 以及确定单元,其可以基于检测到的错误位的数量来确定判定单元是否使用第二判定值从检测到的阈值电压确定第二数据,第二判定值与第一判定值不同。 通过这种方式,可以减少读取存储在多位单元中的数据所花费的时间。