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1. 发明授权

US11705497B2 Semiconductor device 有权
公开(公告)号：US11705497B2
公开(公告)日：2023-07-18
申请号：US17185466
申请日：2021-02-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： In Yeal Lee , Yoon Young Jung , Jin-Wook Kim , Deok Han Bae , Myung Yoon Um
IPC分类号： H01L29/423 , H01L29/786 , H01L29/06 , H01L29/51
CPC分类号： H01L29/42392 , H01L29/0673 , H01L29/512 , H01L29/78696
摘要： A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.

2. 发明授权

US11626501B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US11626501B2
公开(公告)日：2023-04-11
申请号：US17039083
申请日：2020-09-30
申请人： Samsung Electronics Co., Ltd.
发明人： In Yeal Lee , Ju Youn Kim , Jin-Wook Kim , Ju Hun Park , Deok Han Bae , Myung Yoon Um
IPC分类号： H01L29/423 , H01L23/528 , H01L21/84 , H01L27/088 , H01L27/108 , H01L29/49 , H01L23/522 , H01L21/02
摘要： A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.

3. 发明授权

US11296029B2 Semiconductor device and method of fabricating same 有权
公开(公告)号：US11296029B2
公开(公告)日：2022-04-05
申请号：US17007265
申请日：2020-08-31
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ju Youn Kim , Deok Han Bae , Jin-Wook Kim , Ju Hun Park , Myung Yoon Um , In Yeal Lee
IPC分类号： H01L23/535 , H01L29/06 , H01L29/423 , H01L29/417 , H01L29/786 , H01L29/08 , H01L29/78 , H01L21/3213 , H01L21/768
摘要： A semiconductor device includes an active pattern extending in a first horizontal direction on a substrate, a gate electrode extending in a second horizontal direction across the active pattern, and including a first portion, and a second portion protruding upward from the first portion in a vertical direction, a capping pattern extending in the second horizontal direction on the gate electrode, and a gate contact disposed on the second portion of the gate electrode, overlapping the active pattern, and penetrating the capping pattern to connect the gate electrode.

4. 发明申请

US20180286810A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180286810A1
公开(公告)日：2018-10-04
申请号：US15841515
申请日：2017-12-14
申请人： Samsung Electronics Co., Ltd.
发明人： Jong Ho You , Deok Han Bae , Sang Young Kim
IPC分类号： H01L23/535 , H01L27/092 , H01L29/08 , H01L29/161 , H01L29/16 , H01L29/417 , H01L29/45
CPC分类号： H01L29/78618 , H01L23/535 , H01L27/0924 , H01L29/0843 , H01L29/0847 , H01L29/16 , H01L29/1608 , H01L29/161 , H01L29/41725 , H01L29/41766 , H01L29/45
摘要： A semiconductor device includes an active fin extended in a first direction on a substrate. A gate structure extends in a second direction, wherein the gate structure intersects the active fin and covers an upper portion of the active fin. A source/drain region is positioned on the active fin adjacent to the gate structure. A silicide layer is on the source/drain region. A contact plug is connected to the source/drain region. Avoid is present between the silicide layer and the contact plug.

5. 发明公开

US20240371876A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20240371876A1
公开(公告)日：2024-11-07
申请号：US18775521
申请日：2024-07-17
申请人： Samsung Electronics Co., Ltd.
发明人： Deok Han Bae , Ju Hun Park , Myung Yoon Um , Ye Ji Lee , Yoon Young Jung
IPC分类号： H01L27/092 , H01L23/528 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/786
CPC分类号： H01L27/0924 , H01L23/528 , H01L29/0665 , H01L29/41791 , H01L29/42392 , H01L29/78696
摘要： A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

6. 发明授权

US12068323B2 Semiconductor devices and methods for fabricating the same 有权
公开(公告)号：US12068323B2
公开(公告)日：2024-08-20
申请号：US17511923
申请日：2021-10-27
申请人： Samsung Electronics Co., Ltd.
发明人： Deok Han Bae , Ju Hun Park , Myung Yoon Um , Ye Ji Lee , Yoon Young Jung
IPC分类号： H01L27/092 , H01L23/528 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/786
CPC分类号： H01L27/0924 , H01L23/528 , H01L29/0665 , H01L29/41791 , H01L29/42392 , H01L29/78696
摘要： A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

7. 发明授权

US10998411B2 Semiconductor device 有权
公开(公告)号：US10998411B2
公开(公告)日：2021-05-04
申请号：US16406472
申请日：2019-05-08
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Deok Han Bae , Hyung Jong Lee , Hyun Jin Kim
IPC分类号： H01L29/417 , H01L27/088 , H01L29/06 , H01L29/78 , H01L27/092 , H01L27/12 , H01L29/66 , H01L21/8234 , H01L27/11 , H01L27/02
摘要： A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.

8. 发明授权

US10374085B2 Semiconductor device 有权
公开(公告)号：US10374085B2
公开(公告)日：2019-08-06
申请号：US15997793
申请日：2018-06-05
申请人： Samsung Electronics Co., Ltd.
发明人： Sang Young Kim , Deok Han Bae , Byung Chan Ryu , Da Un Jeon
IPC分类号： H01L27/108 , H01L29/78 , H01L21/768 , H01L23/485
摘要： A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.

9. 发明授权

US12094976B2 Semiconductor device 有权
公开(公告)号：US12094976B2
公开(公告)日：2024-09-17
申请号：US17558967
申请日：2021-12-22
申请人： Samsung Electronics Co., Ltd.
发明人： Deok Han Bae , Ju Hun Park , Myung Yoon Um , Yu Ri Lee , In Yeal Lee
IPC分类号： H01L29/78 , H01L29/08
CPC分类号： H01L29/7851 , H01L29/0847
摘要： A semiconductor device includes a first fin-shaped pattern which extends lengthwise in a first direction, a second fin-shaped pattern which is spaced apart from the first fin-shaped pattern in a second direction and extends lengthwise in the first direction, a first gate electrode extending lengthwise in the second direction on the first fin-shaped pattern, a second gate electrode extending lengthwise in the second direction on the second fin-shaped pattern, a first gate separation structure which separates the first gate electrode and the second gate electrode and is at the same vertical level as the first gate electrode and the second gate electrode, and a first source/drain contact extending lengthwise in the second direction on the first fin-shaped pattern and the second fin-shaped pattern. The first source/drain contact includes a first lower source/drain contact region which intersects the first fin-shaped pattern and the second fin-shaped pattern, and a first upper source/drain contact region which protrudes from the first lower source/drain contact region, and the first upper source/drain contact region does not overlap the first gate separation structure in the first direction.

10. 发明申请

US20220262797A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME 有权
公开(公告)号：US20220262797A1
公开(公告)日：2022-08-18
申请号：US17511923
申请日：2021-10-27
申请人： Samsung Electronics Co., Ltd.
发明人： Deok Han Bae , Ju Hun Park , Myung Yoon Um , Ye Ji Lee , Yoon Young Jung
IPC分类号： H01L27/092 , H01L29/417 , H01L23/528 , H01L29/423 , H01L29/786 , H01L29/06
摘要： A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

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