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    • 8. 发明申请
    • POLYSILICON DEPOSITION APPARATUS
    • 多晶硅沉积装置
    • WO2010076973A3
    • 2010-09-10
    • PCT/KR2009006972
    • 2009-11-25
    • SEMI MATERIALS CO LTDYOU HO-JUNGPARK SUNG-EUNEOM IL-SOO
    • YOU HO-JUNGPARK SUNG-EUNEOM IL-SOO
    • H01L21/205C23C16/24
    • C23C16/24C01B33/035C23C14/0641C23C16/4418C23C16/45578
    • A polysilicon deposition apparatus according to the present invention comprises an electrode unit which is arranged on the bottom of a reactor having a gas inlet port for injecting raw material gas, a gas outlet port for discharging a gas to the outside, and a heating material injection port for injecting heating material, wherein said electrode unit includes: a first electrode and a second electrode spaced apart from each other by a predetermined spacing; a silicon core rod unit which receives current from the first electrode of the electrode unit, enables the current to flow to the second electrode of the electrode unit, and generates heat; a silicon core rod heating unit which is spaced apart from the silicon core rod unit by a predetermined spacing, surrounds the silicon core rod unit, and includes a heater to which the heating material is injected via the heating material injection port of the reactor; a gas supply pipe which is interposed between the heater and the silicon core rod unit, and which supplies the raw material gas injected via the gas inlet port of the reactor to the silicon core rod unit; and a gas spray unit having a plurality of nozzles arranged on the surface of the gas supply pipe to spray the raw material gas such that the gas flows toward the silicon core rod unit.
    • 根据本发明的多晶硅沉积装置包括:电极单元,布置在具有用于注入原料气体的气体入口的反应器的底部,用于将气体排出到外部的气体出口和加热材料注入 用于注入加热材料的端口,其中所述电极单元包括:第一电极和彼此隔开预定间隔的第二电极; 从所述电极单元的第一电极接收电流的硅芯棒单元能够使电流流到电极单元的第二电极,并产生热量; 与硅芯棒单元隔开预定间隔的硅芯棒加热单元围绕硅芯棒单元,并且包括加热器,加热材料经由反应器的加热材料注入口注入到该加热器中; 设置在加热器和硅芯棒单元之间的供气管,其经由反应器的气体入口喷射的原料气体供给到硅芯棒单元; 以及气体喷射单元,其具有布置在气体供给管的表面上的多个喷嘴,以喷射原料气体,使得气体朝向硅芯棒单元流动。
    • 9. 发明申请
    • POLYSILICON DEPOSITION APPARATUS
    • 多晶硅沉积装置
    • WO2010076974A2
    • 2010-07-08
    • PCT/KR2009006974
    • 2009-11-25
    • SEMI MATERIALS CO LTDYOU HO-JUNGPARK SUNG-EUNEOM IL-SOO
    • YOU HO-JUNGPARK SUNG-EUNEOM IL-SOO
    • H01L21/205C23C16/24
    • C23C16/24C01B33/035C23C16/4418C23C16/45578
    • A polysilicon deposition apparatus according to the present invention comprises an electrode unit which is arranged on the bottom of a reactor having a gas inlet port for injecting raw material gas, and a gas outlet port for discharging a gas to the outside, wherein said electrode unit includes: a first electrode and a second electrode spaced apart from each other by a predetermined spacing; a silicon core rod unit which receives current from the first electrode of the electrode unit, enables the current to flow to the second electrode of the electrode unit, and generates heat; a silicon core rod heating unit which is spaced apart from the silicon core rod unit by a predetermined spacing, surrounds the silicon core rod unit, and includes a heater in which heating means is installed; and a gas spray unit arranged on the surface of the heater such that the raw material gas injected into the heater via the gas inlet port of the reactor flows toward the silicon core rod unit.
    • 根据本发明的多晶硅沉积装置包括布置在具有用于注入原料气体的气体入口的反应器的底部的电极单元和用于将气体排出到外部的气体出口,其中所述电极单元 包括:以预定间隔彼此间隔开的第一电极和第二电极; 从所述电极单元的第一电极接收电流的硅芯棒单元能够使电流流到电极单元的第二电极,并产生热量; 与硅芯棒单元隔开预定间隔的硅芯棒加热单元围绕硅芯棒单元,并且包括其中安装加热装置的加热器; 以及设置在加热器表面上的气体喷射单元,使得经由反应器的气体入口喷射到加热器中的原料气体朝向硅芯棒单元流动。