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    • 4. 发明专利
    • Cmos image sensor, and its manufacturing method
    • CMOS图像传感器及其制造方法
    • JP2010016382A
    • 2010-01-21
    • JP2009158788
    • 2009-07-03
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • PARK BYUNG-JUNKIM SANG-HEE
    • H01L27/146
    • H01L27/14685H01L27/14621H01L27/14627H01L27/1463H01L27/1464
    • PROBLEM TO BE SOLVED: To provide a CMOS image sensor, and a manufacturing method of the CMOS image sensor. SOLUTION: In this manufacturing method of the CMOS image sensor, a first substrate 10, a second substrate 20, and a substrate structural body including a refractive index matching film 24 containing nitrogen and an oxide film 22 between the first substrate 10 and the second substrate are formed, and at least one optical sensor element 121 is formed in the second substrate 20, and after forming the substrate structural body, a metal wiring structural body is formed on the first surface of the second substrate 20 which does not face the first substrate 10. At least one of the optical sensor elements 121 exists between the metal wiring structural body and the oxide film 22 as well as the index matching film 24. In addition, the metal wiring structural body is electrically connected to at least one of the optical sensor elements 121. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供CMOS图像传感器以及CMOS图像传感器的制造方法。 解决方案:在CMOS图像传感器的制造方法中,第一基板10,第二基板20以及包含氮的折射率匹配膜24和在第一基板10和第二基板10之间的氧化物膜22的基板结构体 形成第二基板,并且在第二基板20中形成至少一个光学传感器元件121,并且在形成基板结构体之后,在第二基板20的不面对的第一表面上形成金属布线结构体 第一基板10.至少一个光学传感器元件121存在于金属布线结构体和氧化膜22以及折射率匹配膜24之间。此外,金属布线结构体电连接到至少一个 的光学传感器元件121.(C)2010,JPO&INPIT