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    • 3. 发明专利
    • Method of forming fine pattern
    • 形成精细图案的方法
    • JP2009147331A
    • 2009-07-02
    • JP2008310857
    • 2008-12-05
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • YI SHI-YONGKIM KYOUNG TAEKKIM HYUN WOOYOON DONG-KI
    • H01L21/3065H01L21/027
    • H01L21/0332H01L21/0276H01L21/0337H01L21/0338H01L21/31144H01L21/32139
    • PROBLEM TO BE SOLVED: To provide a method of forming a fine pattern utilizing a block copolymer equipped with at least three polymer blocks. SOLUTION: On a substrate 115, a block copolymer layer having a first type polymer block, a second type polymer block, and a third type polymer block, each type of polymer block having a different repetitive unit, is formed. Then, the block copolymer layer 140' is divided to form a plurality of first domains 140A containing the first type polymer block, a plurality of second domains 140B containing the second type polymer block, and a plurality of third domains 140C containing the third type polymer block. At least one of the first domains 140A, the second domains 140B, and the third domains 140C is selectively removed to form a fine mask pattern. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种利用装备有至少三个聚合物嵌段的嵌段共聚物形成精细图案的方法。 解决方案:在基板115上形成具有第一类聚合物嵌段,第二类聚合物嵌段和第三类聚合物嵌段的嵌段共聚物层,每种类型的具有不同重复单元的聚合物嵌段。 然后,将嵌段共聚物层140'分割成多个含有第一种聚合物嵌段的第一区域140A,含有第二类型聚合物嵌段的多个第二区域140B和含有第三类型聚合物的多个第三区域140C 块。 选择性地去除第一域140A,第二域140B和第三域140C中的至少一个以形成精细掩模图案。 版权所有(C)2009,JPO&INPIT