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1. 发明专利

JP2010010682A Submount, light emitting device including submount, and method of manufacturing submount 有权
标题翻译： SUBMOUNT，包括SUBMOUNT的发光设备，以及制造SUBMOUNT的方法
公开(公告)号：JP2010010682A
公开(公告)日：2010-01-14
申请号：JP2009150070
申请日：2009-06-24
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM YU-SIK , HAN WOO-SUNG
IPC分类号： H01L33/62 , H01L23/12 , H01L25/07 , H01L33/00 , H05K1/02
CPC分类号： H05K1/0295 , H01L25/0753 , H01L2224/16225 , H05K2201/09227 , H05K2201/09254 , H05K2201/09318 , H05K2201/0949 , H05K2201/09663 , H05K2201/09954 , H05K2201/10106 , H05K2203/173
摘要： PROBLEM TO BE SOLVED: To provide a submount, a light emitting device, and a method of manufacturing the submount. SOLUTION: The submount 1 includes a base substrate 100 having a first surface and a second surface different from the first surface, a conductive pattern 110 on the first surface, a first electrode pair of a first electrode 130 and a second electrode 140 on the second surface of the base substrate 100, a second electrode pair of a first electrode 132 and a second electrode 142 on the second surface of the base substrate 100, and many vias 120 extended penetrating the base substrate between the first surface and second surface. The conductive pattern 120 includes a first mounting portion set and two via portions along a first electric path between the first electrode 130 and second electrode 140 of the first electrode pair, and a second mounting portion set and two via portions along a second electric path between the first electrode 132 and second electrode 142 of the second electrode pair and different from the first electric path. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种基座，发光器件和制造该基座的方法。解决方案：底座1包括具有第一表面和与第一表面不同的第二表面的基底基板100，第一表面上的导电图案110，第一电极130的第一电极对和第二电极140 在基底基板100的第二表面上，在基底基板100的第二表面上的第一电极132和第二电极142的第二电极对，以及在第一表面和第二表面之间延伸穿过基底基板的许多通孔120 。导电图案120包括第一安装部分组和沿着第一电极对的第一电极130和第二电极140之间的第一电路的两个通孔部分，以及第二安装部分组和沿着第二电路之间的两个通孔部分第二电极对的第一电极132和第二电极142，并且与第一电路不同。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2007072456A Binary photomask having compensation layer with topology and method for manufacturing same 审中-公开
标题翻译：具有拓扑学补偿层的二进制光子学及其制造方法
公开(公告)号：JP2007072456A
公开(公告)日：2007-03-22
申请号：JP2006232523
申请日：2006-08-29
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JUNG JIN-SIK , KIM HEE-BOM , HAN WOO-SUNG , HUH SUNG-MIN
IPC分类号： G03F1/48 , G03F1/68 , H01L21/027
CPC分类号： G03F1/29
摘要： PROBLEM TO BE SOLVED: To provide a binary photomask having a compensation layer with topology and to provide a method for manufacturing the photomask. SOLUTION: The photomask comprises a substrate, a transmission-prevention pattern on the substrate to define a circuit pattern, and a compensation layer having a three-dimensional topological structure formed on a semiconductor substrate having a transmission-prevention pattern. The compensation layer is preferably made of a transparent substance, wherein phases of incident light are changed to improve intensity of first-order light and improve pattern resolution. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有拓扑的补偿层的二进制光掩模，并提供制造光掩模的方法。解决方案：光掩模包括基板，基板上的防止传播图案，以限定电路图案，以及具有形成在具有透射防止图案的半导体基板上的三维拓扑结构的补偿层。补偿层优选由透明物质制成，其中改变入射光的相位以改善一次光的强度并提高图案分辨率。版权所有（C）2007，JPO＆INPIT

3. 发明专利

DE10330599A1 未知
公开(公告)号：DE10330599A1
公开(公告)日：2004-05-13
申请号：DE10330599
申请日：2003-07-07
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： CHOI SANG-JUN , LEE SI-HYEUNG , KIM HYOUNG-DO , HAN WOO-SUNG
IPC分类号： G03F7/00 , G03F1/08 , G03F7/40 , H01L21/027 , G03F7/09 , B81C1/00
摘要： A resist pattern can be formed on a microelectronic substrate, the resist pattern comprising a resist material. A coating layer, including a water-soluble resin, is formed on the resist pattern, wherein the water-soluble resin and the resist material are miscible with one another and intermix to provide an intermixed layer comprising the resist material and the water-soluble resin between the resist pattern and a non-intermixed coating layer. The intermixed layer can be hardened and the non-intermixed coating layer can be removed from the hardened intermixed layer.

4. 发明专利

DE69518345T2 未知
公开(公告)号：DE69518345T2
公开(公告)日：2001-01-25
申请号：DE69518345
申请日：1995-01-09
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HAN WOO-SUNG , SOHN CHANG-JIN
IPC分类号： G03F1/68 , G03F1/00 , G03F1/36 , G03F1/80 , G03F7/20 , G03F7/26 , H01L21/027 , G03F1/14
摘要： A photo mask and method for manufacturing the same increase the capacitance of a capacitor by improving the proximity effect of the mask pattern. The photo mask includes a transparent substrate, an opaque mask pattern (11;15;20) for defining an optical transmission area on the substrate, and an optical transmittance control film pattern (10;14;17&18) for suppressing proximity effect in the optical transmission area. The proximity effect is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the opaque mask pattern, so that the mask pattern shape can be exactly transferred onto a substrate. Thus, capacitor surface area is increased thereby improving the reliability of manufacture of a semiconductor device.

5. 发明专利

DE69308755D1 未知
公开(公告)号：DE69308755D1
公开(公告)日：1997-04-17
申请号：DE69308755
申请日：1993-11-17
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM CHEOL-HONG , HAN WOO-SUNG
IPC分类号： G03F7/26 , G03F7/075 , G03F7/09 , G03F7/095 , H01L21/30 , G03F7/38
摘要： A method for forming a pattern where the processing is simplified by using a silylated photoresist film, having retained the resolution increasing effect according to a multi-layer photoresist film process is disclosed, wherein a first photoresist layer (21) is formed on substrate (20) and part of the surface of the substrate is silylated, to thereby form a silylation layer (23). Then, a second photoresist layer (24) is formed on silylation layer (23), which then is exposed through the photo mask (25) having a predetermined pattern. Then, a second photoresist pattern (24a) is formed after development. Then, a silylation layer pattern (23a) is formed by etching-back the silylation layer (23) using the second photoresist pattern as (24a) an etching mask. Then, the silylation pattern (23a) is oxidized. and the first photoresist layer (21) is etched using the oxidized silylation pattern, thereby forming a first photoresist pattern (21a). A resolution increasing effect can be maintained only through the two layer photoresist film structure without the intermediate oxide film, while the process is simplified and the undesired polymer is less generated.

6. 发明专利

IT1250086B 未知
公开(公告)号：IT1250086B
公开(公告)日：1995-03-30
申请号：ITRM910643
申请日：1991-08-29
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HAN WOO-SUNG
IPC分类号： G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L
摘要： A method for forming an accurate pattern on a semiconductor element that has a step. The method includes the steps of coating a photosensitive material on the surface of the semiconductor, pre-exposing to ultraviolet rays the photosensitive material exisiting in the non-step area which is formed on the surface of the semiconductor other than step area, through a first photomask, exposing the entire photosensitive material through a second photomask with a desired pattern to ultraviolet after removing the first photomask, and developing and removing only photosensitive material that is exposed to ultraviolet in the pre-exposing and exposing steps.

7. 发明专利

DE4331519A1 Fine pattern prodn with high resolution using simplified efficient method - by applying first photoresist, silylating and glassifying surface, making mask with second resist layer and etching down to substrate 未知
公开(公告)号：DE4331519A1
公开(公告)日：1994-03-24
申请号：DE4331519
申请日：1993-09-16
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HAN WOO-SUNG
IPC分类号： G03F7/26 , G03F7/09 , G03F7/38 , H01L21/027 , G03F7/11 , G03F7/20 , G03F7/40
摘要： Prodn. of a fine pattern comprises the stages: (1) coating a process substrate (I) with photoresist (II) to form a first resist layer (III) and silylation of the surface to form a silylated layer (IV); (2) glassifying (V) with O2 to form a glassified layer (V); (3) coating (V) with (II) to form a second resist layer (VI); (4) selective exposure and development of (VI) in a given pattern; and (5) etching (V) and (III), using (VI) as mask. ADVANTAGE - Prod. of a fine pattern is simplified and the productivity is increased, since (V) is used as intermediate layer. The resolution is high. In an example, a Si wafer (1) was coated with chemically amplified resist (2). This was silylated in gas or aq. phase to form a 2000-3000 A thick silylation layer (21) and glassified with O2 (22) in RIE appts., forming a glassified layer (23) of SiOx in the organic material. A second resist layer (4) was applied, exposed with UV light (5) through a photomask (6) and developed. The glassified layer was etched with 100 Ncc O2/min at an energy of 2 kW, then the first resist was etched in 25Ncc CF4/min + 60 Ncc O2/min at 2kW in the same appts.

8. 发明专利

DE4126635A1 未知
公开(公告)号：DE4126635A1
公开(公告)日：1992-08-13
申请号：DE4126635
申请日：1991-08-12
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HAN WOO-SUNG
IPC分类号： G03F7/20 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/308
摘要： A method for forming a micropattern with a line width and spacing below the resolution limit of a photolithographic process comprises the steps of covering a photoresist layer (11) over a material 10 to be etched, exposing the photoresist layer (11) using a mask on which a pattern is formed having a linewidth and spacing below the resolution limit of the photoresist layer (11), developing the exposed photoresist layer to form grooves in the surface of the exposed photoresist layer, filling the grooves with an etch-blocking material (12) which is resistant to oxygen reactive ion etching, etching the photoresist layer (11) by oxygen reactive ion etching using the etch blocking material (12) filling the grooves as a mask, and etching the material 10 using the pattern which is made of a photoresist layer and formed by the etching process, as a mask.

9. 发明专利

FR2672138A1 Method of forming a micropattern below the limit of resolution of a photolithographic process 未知
公开(公告)号：FR2672138A1
公开(公告)日：1992-07-31
申请号：FR9109730
申请日：1991-07-31
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HAN WOO-SUNG
IPC分类号： G03F7/20 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/308
摘要： Method of forming a micropattern below the limit of resolution of a photolithographic process including the steps consisting in applying a layer of photosensitive varnish (11) to a material to be etched (10), exposing the layer of photosensitive varnish (11) by using a mask on which a pattern is formed having a line width and a spacing below the limit of resolution of the layer of photosensitive varnish (11), developing the exposed layer of photosensitive varnish in order to form grooves (13) on the surfaces of the exposed layer of photosensitive varnish, filling the grooves (13) with a material preventing etching (12), resistant to reactive ionic etching with oxygen, etching the layer of photosensitive varnish (11) by reactive ionic etching with oxygen, using the material preventing the etching (12) filling the grooves (13) as a mask, and etching the material by using the pattern which consists of a layer of photosensitive varnish and formed by the etching process, as mask.

10. 发明专利

DE69518345D1 未知
公开(公告)号：DE69518345D1
公开(公告)日：2000-09-21
申请号：DE69518345
申请日：1995-01-09
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HAN WOO-SUNG , SOHN CHANG-JIN
IPC分类号： G03F1/68 , G03F1/00 , G03F1/36 , G03F1/80 , G03F7/20 , G03F7/26 , H01L21/027 , G03F1/14
摘要： A photo mask and method for manufacturing the same increase the capacitance of a capacitor by improving the proximity effect of the mask pattern. The photo mask includes a transparent substrate, an opaque mask pattern (11;15;20) for defining an optical transmission area on the substrate, and an optical transmittance control film pattern (10;14;17&18) for suppressing proximity effect in the optical transmission area. The proximity effect is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the opaque mask pattern, so that the mask pattern shape can be exactly transferred onto a substrate. Thus, capacitor surface area is increased thereby improving the reliability of manufacture of a semiconductor device.

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