专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09508932B2 Laser crystallization system, laser crystallization method, and method of fabricating display device 有权
标题翻译：激光结晶系统，激光结晶方法及制造显示装置的方法
公开(公告)号：US09508932B2
公开(公告)日：2016-11-29
申请号：US14658051
申请日：2015-03-13
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Sang Hyun Jeon , Eun Jeong Cho
IPC分类号： C30B13/24 , H01L51/00 , H01L27/32 , C30B15/00
CPC分类号： H01L51/0027 , B23K26/032 , B23K26/0673 , B23K2103/56 , C30B13/24 , C30B15/00 , H01L21/02532 , H01L21/02675 , H01L21/02691 , H01L22/12 , H01L22/20 , H01L27/3248
摘要： A laser crystallization system, including an output unit configured to generate output laser light, an optical unit configured to split the output laser light into a first laser light and a second laser light, and to process the first laser light to have a crystallization energy density, a moving unit configured to move a target object to be irradiated with the first laser light and the second laser light, a detection unit configured to detect surface information of the target object utilizing the second laser light, and an input unit configured to receive the detected surface information and to transmit a control signal to the output unit and the moving unit, wherein the laser crystallization system is configured to detect the surface information of the target object and to crystallize the target object utilizing only the output laser light.
摘要翻译：一种激光结晶系统，包括被配置为产生输出激光的输出单元，被配置为将输出激光分裂成第一激光和第二激光的光学单元，并且处理第一激光以具有结晶能量密度，移动单元，被配置为移动要用第一激光和第二激光照射的目标物体;检测单元，被配置为使用第二激光检测目标物体的表面信息;以及输入单元，被配置为接收检测到的表面信息并将控制信号发送到输出单元和移动单元，其中激光结晶系统被配置为检测目标物体的表面信息，并且仅利用输出激光来使目标物体结晶。

2. 发明授权

US09406704B1 Thin film transistor array panel 有权
公开(公告)号：US09406704B1
公开(公告)日：2016-08-02
申请号：US14799995
申请日：2015-07-15
申请人： Samsung Display Co., Ltd.
发明人： Yung Bin Chung , Chul-Hyun Baek , Eun Jeong Cho , Jung Yun Jo
IPC分类号： H01L27/14 , H01L27/12 , H01L29/66 , H01L29/786 , H01L29/417 , H01L21/02
摘要： A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

3. 发明申请

US20140192287A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20140192287A1
公开(公告)日：2014-07-10
申请号：US14075327
申请日：2013-11-08
申请人： Samsung Display Co., Ltd
发明人： Sang Youn HAN , Kyung Tea Park , Cheol Kyu Kim , Sung Hoon Yang , Sang Hyun Jeon , Eun Jeong Cho
IPC分类号： G02F1/1368 , G02F1/1335
CPC分类号： G02F1/1368 , H01L27/1214 , H01L29/4908
摘要： A display device includes a display panel including a transistor and a backlight unit providing light to the display panel. The transistor includes a transparent substrate that the backlight unit faces. A gate electrode having a first width is disposed on the transparent substrate. A gate insulating layer, having a barrier layer, is disposed on the gate electrode and the transparent substrate. A semiconductor layer is disposed on the gate insulating layer. The semiconductor layer has a second width greater than the first width.
摘要翻译：显示装置包括：显示面板，包括晶体管和向显示面板提供光的背光单元。晶体管包括背光单元所面对的透明基板。具有第一宽度的栅电极设置在透明基板上。具有阻挡层的栅极绝缘层设置在栅电极和透明基板上。半导体层设置在栅极绝缘层上。半导体层具有大于第一宽度的第二宽度。

4. 发明授权

US10672911B2 Thin film transistor substrate and display panel having the same 审中-公开
公开(公告)号：US10672911B2
公开(公告)日：2020-06-02
申请号：US16451593
申请日：2019-06-25
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
IPC分类号： H01L27/12 , H01L29/786 , H01L51/52 , H01L51/00 , H01L29/78 , H01L27/32
摘要： A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

5. 发明授权

US09647237B2 Thin film transistor substrate and display panel having the same 有权
公开(公告)号：US09647237B2
公开(公告)日：2017-05-09
申请号：US15045688
申请日：2016-02-17
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
IPC分类号： H01L29/08 , H01L51/52 , H01L51/00 , H01L27/12
CPC分类号： H01L29/78603 , H01L27/1218 , H01L27/1225 , H01L27/3244 , H01L27/3262 , H01L29/7849 , H01L29/78633 , H01L29/7869 , H01L51/0097 , H01L51/5256 , H01L2251/5338 , H01L2251/55 , Y02E10/549
摘要： A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

6. 发明申请

US20160126457A1 LASER CRYSTALLIZATION SYSTEM, LASER CRYSTALLIZATION METHOD, AND METHOD OF FABRICATING DISPLAY DEVICE 有权
标题翻译：激光结晶系统，激光结晶方法和制造显示装置的方法
公开(公告)号：US20160126457A1
公开(公告)日：2016-05-05
申请号：US14658051
申请日：2015-03-13
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Sang Hyun Jeon , Eun Jeong Cho
IPC分类号： H01L51/00 , H01L51/56 , H01L27/32
CPC分类号： H01L51/0027 , B23K26/032 , B23K26/0673 , B23K2103/56 , C30B13/24 , C30B15/00 , H01L21/02532 , H01L21/02675 , H01L21/02691 , H01L22/12 , H01L22/20 , H01L27/3248
摘要： A laser crystallization system, including an output unit configured to generate output laser light, an optical unit configured to split the output laser light into a first laser light and a second laser light, and to process the first laser light to have a crystallization energy density, a moving unit configured to move a target object to be irradiated with the first laser light and the second laser light, a detection unit configured to detect surface information of the target object utilizing the second laser light, and an input unit configured to receive the detected surface information and to transmit a control signal to the output unit and the moving unit, wherein the laser crystallization system is configured to detect the surface information of the target object and to crystallize the target object utilizing only the output laser light.
摘要翻译：一种激光结晶系统，包括被配置为产生输出激光的输出单元，被配置为将输出激光分裂成第一激光和第二激光的光学单元，并且处理第一激光以具有结晶能量密度，移动单元，被配置为移动要用第一激光和第二激光照射的目标物体;检测单元，被配置为使用第二激光检测目标物体的表面信息;以及输入单元，被配置为接收检测到的表面信息并将控制信号发送到输出单元和移动单元，其中激光结晶系统被配置为检测目标物体的表面信息，并且仅利用输出激光来使目标物体结晶。

7. 发明授权

US10361312B2 Thin film transistor substrate and display panel having the same 有权
公开(公告)号：US10361312B2
公开(公告)日：2019-07-23
申请号：US15480102
申请日：2017-04-05
申请人： Samsung Display Co., Ltd.
发明人： Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
IPC分类号： H01L27/12 , H01L29/786 , H01L51/52 , H01L51/00 , H01L29/78 , H01L27/32
摘要： A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

8. 发明授权

US09917108B2 Thin film transistor array panel and method of manufacturing the same 有权
公开(公告)号：US09917108B2
公开(公告)日：2018-03-13
申请号：US15445650
申请日：2017-02-28
申请人： Samsung Display Co., Ltd.
发明人： Jung Yun Jo , Ki Seong Seo , Eun Jeong Cho
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1222 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02686 , H01L29/66757 , H01L29/78675
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

9. 发明授权

US09536908B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US09536908B2
公开(公告)日：2017-01-03
申请号：US14799995
申请日：2015-07-15
申请人： Samsung Display Co., Ltd.
发明人： Yung Bin Chung , Chul-Hyun Baek , Eun Jeong Cho , Jung Yun Jo
IPC分类号： H01L27/14 , H01L27/12 , H01L29/66 , H01L29/786 , H01L29/417 , H01L21/02
CPC分类号： H01L27/124 , H01L21/0217 , H01L27/1248 , H01L27/1259 , H01L29/41733 , H01L29/66765 , H01L29/78606 , H01L29/78669 , H01L29/78678
摘要： A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板，设置在绝缘基板上的栅极线，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线，以及包括源电极，设置在半导体层上并面对源电极的漏电极，设置在栅绝缘层上的第一电极，设置在第一电极上并包括氮化硅的第一钝化层，设置在第一电极上的第二钝化层第一钝化并且包括氮化硅，以及设置在钝化层上的第二电极，其中第一钝化层中氮 - 氢键与硅 - 氢键的第一比例不同于氮 - 氢键与硅的第二比率在第二钝化层中的氢键。

10. 发明申请

US20190326442A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME 审中-公开
公开(公告)号：US20190326442A1
公开(公告)日：2019-10-24
申请号：US16451593
申请日：2019-06-25
申请人： SAMSUNG DISPLAY CO, LTD.
发明人： Seung Ho JUNG , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
IPC分类号： H01L29/786 , H01L51/00 , H01L27/12 , H01L29/78 , H01L51/52
摘要： A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式