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1. 发明授权

US11441071B2 Etchant composition and methods for manufacturing metal pattern and array substrate using the same 有权
公开(公告)号：US11441071B2
公开(公告)日：2022-09-13
申请号：US16702773
申请日：2019-12-04
申请人： Samsung Display Co., Ltd.
发明人： Bong-Kyun Kim , JinSeuk Kim , SeungBo Shim , ShinHyuk Choi , Seung-Hee Kim , Donghee Lee
IPC分类号： C09K13/08 , H01L29/45 , H01L21/3213 , H01L27/12 , C23F1/10 , C23F1/16 , C09K13/00 , C23F1/02 , C23F1/18 , C23F1/26 , C23F1/44 , G03F7/20 , H01L21/306 , H01L21/311 , C09K13/06 , G02F1/1368
摘要： An etchant composition of an embodiment includes a persulfate, a four-nitrogen ring compound, a two-chlorine compound, a fluorine compound and water, and has a weight ratio of the four-nitrogen ring compound and the two-chlorine compound of about 1:0.5 to about 1:4. The etchant composition may etch a multilayer metal substrate of titanium/copper and may be used for manufacturing a multilayer metal pattern and an array substrate having excellent properties of etched patterns.

2. 发明授权

US10910412B2 Etchant composition, and method for manufacturing metal pattern and array substrate using the same 有权
公开(公告)号：US10910412B2
公开(公告)日：2021-02-02
申请号：US16356551
申请日：2019-03-18
申请人： Samsung Display Co., Ltd.
发明人： Bong-Kyun Kim , Jinsuek Kim , Seungbo Shim , Shinhyuk Choi , Woonhyung Shim , Donghee Lee
IPC分类号： H01L27/12 , H01L21/3213 , G02F1/1362 , C09K13/06 , C09K13/08
摘要： An etchant composition including a persulfate, a four-nitrogen ring compound, a carbonyl ring compound having two or more carbonyl groups, and water, and having a weight ratio of the four-nitrogen ring compound and the carbonyl ring compound of about 1:0.1 to about 1:2. The etchant composition may etch a multilayer of titanium/copper and may be used for manufacturing a metal pattern and an array substrate having excellent properties of an etched pattern.

3. 发明授权

US09360695B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US09360695B2
公开(公告)日：2016-06-07
申请号：US14046326
申请日：2013-10-04
申请人： Samsung Display Co., Ltd.
发明人： Jong-Hyun Choung , Wang Woo Lee , Bong-Kyun Kim , In-Bae Kim , Seon-Il Kim , Young Min Moon , Hong Sick Park , Ki Tae Kim
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1337 , G02F1/1362 , G02F1/1368 , H01L27/12
CPC分类号： G02F1/133345 , G02F1/133707 , G02F1/134363 , G02F1/136259 , G02F1/1368 , G02F2001/134372 , G02F2001/136231 , G02F2001/136295 , G02F2201/124 , H01L27/1225
摘要： A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line.
摘要翻译：液晶显示器包括：基板; 设置在基板上的栅极线和数据线; 设置在所述基板上的半导体层; 设置在基板上的第一和第二场产生电极; 以及由与第一场产生电极相同的层形成并覆盖数据线的至少一部分的第一保护层。

4. 发明申请

US20220411696A1 ETCHANT COMPOSITION AND METHODS FOR MANUFACTURING METAL PATTERN AND ARRAY SUBSTRATE USING THE SAME 有权
公开(公告)号：US20220411696A1
公开(公告)日：2022-12-29
申请号：US17896073
申请日：2022-08-26
申请人： Samsung Display Co., Ltd.
发明人： Bong-Kyun Kim , JinSeuk Kim , SeungBo Shim , ShinHyuk Choi , Seung-Hee Kim , Donghee Lee
IPC分类号： C09K13/08 , H01L29/45 , H01L21/3213 , H01L27/12 , C23F1/10 , C23F1/16 , C09K13/00 , C23F1/02 , C23F1/18 , C23F1/26 , C23F1/44 , G03F7/20 , H01L21/306 , H01L21/311 , C09K13/06
摘要： A method for manufacturing a metal pattern, the method including forming a photosensitive layer pattern on a multilayer metal substrate including titanium and copper; providing an etchant composition on the multilayer metal substrate on which the photosensitive layer pattern is formed to form the source electrode and the drain electrode; and removing the photosensitive layer pattern, wherein the etchant composition includes a persulfate, a four-nitrogen ring compound, a two-chlorine compound, a fluorine compound, and water, and a weight ratio of the four-nitrogen ring compound and the two-chlorine compound is from about 1:0.5 to about 1:4.

5. 发明授权

US09871144B2 Thin film transistor substrate 有权
公开(公告)号：US09871144B2
公开(公告)日：2018-01-16
申请号：US15357273
申请日：2016-11-21
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Bong-Kyun Kim , Seung-Ho Yoon , Shin-Il Choi
IPC分类号： H01L29/786 , H01L29/417 , H01L27/12 , H01L29/66 , H01L23/532 , H01L21/465 , H01L21/4763 , H01L21/441 , H01L29/45
CPC分类号： H01L29/7869 , H01L21/441 , H01L21/465 , H01L21/47635 , H01L23/53228 , H01L23/53238 , H01L27/124 , H01L27/1259 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L2924/0002 , H01L2924/00
摘要： A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

6. 发明授权

US09490275B2 Method for manufacturing thin film transistor array panel 有权
标题翻译：制造薄膜晶体管阵列面板的方法
公开(公告)号：US09490275B2
公开(公告)日：2016-11-08
申请号：US14740484
申请日：2015-06-16
申请人： Samsung Display Co., Ltd.
发明人： Young Min Moon , Jong-Hyun Choung , Bong-Kyun Kim
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L29/51 , H01L29/49 , H01L29/78 , H01L29/423
CPC分类号： H01L29/42356 , H01L29/42384 , H01L29/4908 , H01L29/7869
摘要： A thin film transistor array panel includes: a gate line on a substrate and including a gate electrode; a first gate insulating layer on the substrate and the gate line, the first gate insulting layer including a first portion adjacent to the gate line and a second portion overlapping the gate line and having a smaller thickness than that of the first portion; a second gate insulating layer on the first gate insulating layer; a semiconductor layer on the second gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a passivation layer on the second gate insulating layer, the source electrode and the drain electrode; and a pixel electrode on the passivation layer and connected with the drain electrode. The first gate insulating layer and the second gate insulating layer have stress in opposite directions from each other.
摘要翻译：薄膜晶体管阵列面板包括：基板上的栅极线，并包括栅电极; 所述第一栅极绝缘层在所述基板和所述栅极线上，所述第一栅极绝缘层包括与所述栅极线相邻的第一部分和与所述栅极线重叠并且具有比所述第一部分的厚度小的第二部分; 第一栅极绝缘层上的第二栅极绝缘层; 在所述第二栅极绝缘层上的半导体层; 在半导体层上彼此隔开的源电极和漏电极; 第二栅极绝缘层上的钝化层，源电极和漏电极; 以及钝化层上的像素电极并与漏电极连接。第一栅极绝缘层和第二栅极绝缘层在彼此相反的方向上具有应力。

7. 发明申请

US20130234124A1 THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：薄膜晶体管基板，其制造方法和包括其的显示装置
公开(公告)号：US20130234124A1
公开(公告)日：2013-09-12
申请号：US13871368
申请日：2013-04-26
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： KAP-SOO YOON , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
IPC分类号： H01L29/786 , H01L51/52
CPC分类号： H01L29/78693 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L51/5203
摘要： Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
摘要翻译：提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

8. 发明授权

US12051772B2 Display device and manufacturing method thereof 有权
公开(公告)号：US12051772B2
公开(公告)日：2024-07-30
申请号：US17447655
申请日：2021-09-14
申请人： Samsung Display Co., Ltd.
发明人： Seung Bo Shim , Chang Woo Kwon , Bong-Kyun Kim , Jin SueK Kim , Hyo Suk Park , Ho Kil Oh , Eung Gyu Lee , Wan-Soon Im , Joon Hoo Choi
IPC分类号： H01L33/12 , H01L33/62
CPC分类号： H01L33/62 , H01L2933/0066
摘要： A display device includes: a first substrate; a plurality of metal layers on the first substrate and separated from each other; a buffer layer on the metal layer; a semiconductor layer on the buffer layer; a gate conductive layer on the semiconductor layer; a data conductive layer connected to the semiconductor layer; and a light-emitting element connected to the data conductive layer, wherein the metal layer includes a first portion partially overlapping the semiconductor layer in a third direction perpendicular to the surface of the first substrate, a second portion where the metal layer completely overlaps the semiconductor layer in the third direction, and a third portion where the metal layer does not overlap the semiconductor layer in the third direction.

9. 发明授权

US10466845B2 Touch screen panel 有权
公开(公告)号：US10466845B2
公开(公告)日：2019-11-05
申请号：US15079881
申请日：2016-03-24
申请人： Samsung Display Co., Ltd.
发明人： Shin Il Choi , Ji Hun Kim , Bong-Kyun Kim
IPC分类号： G06F3/044 , G06F3/041
摘要： A touch screen panel and a method of manufacturing the same. The touch screen panel includes: a plurality of touch electrodes disposed in a touch area of a substrate, the touch electrodes configured to sense a touch; and a connecting wire connected with the touch electrode and having a pad connected to one end. The connecting wire includes a first wire layer made of a metal nano wire disposed on the substrate, a second wire layer made of a first transparent conductive material, a third wire layer disposed on an upper surface of the second pad and made of a second transparent conductive material, and a fourth wire layer made of aluminum (Al) disposed on the third pad.

10. 发明授权

US10128382B2 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same 有权
公开(公告)号：US10128382B2
公开(公告)日：2018-11-13
申请号：US15866890
申请日：2018-01-10
申请人： Samsung Display Co., Ltd.
发明人： Seungho Yoon , Bong-Kyun Kim , Youngjun Kim , Hongsick Park , Byeong-Beom Kim , Sangwon Shin
IPC分类号： G02F1/1368 , H01L29/786 , H01L27/12 , H01L29/66 , H01L21/465 , H01L21/467 , H01L29/45 , H01L23/532
摘要： A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

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