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1. 发明公开

KR20070109581A HEAT-TREATMENT OF NITRIDE SEMICONDUCTOR SUBSTRATE AND THE SUBSTRATE OBTAINED THEREBY 审中-公开
标题翻译：氮化物半导体基板的热处理及其获得的基板
公开(公告)号：KR20070109581A
公开(公告)日：2007-11-15
申请号：KR20060042738
申请日：2006-05-12
申请人： SAMSUNG CORNING CO LTD
发明人： KIM CHONG DON , SHIN HYUN MIN , KONG SUN HWAN , JEONG JIN SUK
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/02389 , H01L21/304
摘要： A method for heat-treating a nitride semiconductor substrate and a nitride semiconductor substrate obtained thereby are provided to reduce defects by preventing loss of Ga on a surface of the nitride semiconductor substrate. A method for heat-treating a nitride semiconductor substrate includes a process for heat-treating a nitride semiconductor substrate under atmosphere including nitrogen-containing gas and nitride-based semiconductor powders. The nitride-based semiconductor powders or the nitride semiconductor substrate is formed with AlxGayIn1-x-yN where 0
摘要翻译：提供了一种用于热处理由此获得的氮化物半导体衬底和氮化物半导体衬底的方法，以通过防止氮化物半导体衬底的表面上的Ga的损失来减少缺陷。氮化物半导体衬底的热处理方法包括在包含含氮气体和氮化物类半导体粉末的气氛下对氮化物半导体衬底进行热处理的方法。氮化物基半导体粉末或氮化物半导体衬底由Al x Ga y In 1-x-y N形成，其中0 <= x <= 1,0 <= y <= 1，0 <= x + y <= 1。氮化物半导体衬底位于两片蓝宝石衬底之一上。氮化物基半导体粉末位于蓝宝石衬底之间。

2. 发明专利

JP2007137763A Method of manufacturing single crystal gallium nitride thick film 有权
标题翻译：制造单晶氮化镓厚膜的方法
公开(公告)号：JP2007137763A
公开(公告)日：2007-06-07
申请号：JP2006315832
申请日：2006-11-22
申请人： Samsung Corning Co Ltd , 三星コーニング株式会社
发明人： SHIN HYUN MIN , LEE CHANG HO
IPC分类号： C30B29/38 , C23C16/34 , C30B25/10 , H01L21/205
CPC分类号： C30B29/40 , C30B25/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a single crystal gallium nitride (GaN) thick film in which defects and cracks are reduced and which has excellent crystal quality by a hydride vapor phase epitaxy (HVPE) process. SOLUTION: The method of manufacturing the single crystal gallium nitride (GaN) thick film comprises loading a base substrate in an HVPE reactor, supplying gallium (Ga), hydrogen chloride (HCl) gas and ammonia (NH 3 ) gas, and growing the single crystal gallium nitride (GaN) thick film on the base substrate. The method includes: (1) a step of growing a first GaN film at a temperature area (surface kinetics regime), where the growth rate is determined by the reaction rate on a film surface; and (2) a step of growing a second GaN film on the first GaN film, grown in the step (1), at a temperature area (mass transport regime), where the growth rate is determined by material diffusion in the vapor phase. At this time, the growth temperature in the step (2) is higher than that in the step (1). COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过氢化物气相外延（HVPE）工艺制造其中缺陷和裂纹降低并且具有优异的晶体质量的单晶氮化镓（GaN）厚膜的方法。解决方案：制造单晶氮化镓（GaN）厚膜的方法包括在HVPE反应器中加载基底，提供镓（Ga），氯化氢（HCl）气体和氨（NH 3 SB 3， / SB>）气体，并在基底衬底上生长单晶氮化镓（GaN）厚膜。该方法包括：（1）在温度区域（表面动力学状态）生长第一GaN膜的步骤，其中生长速率由膜表面上的反应速率决定; 和（2）在步骤（1）中生长的第一GaN膜上生长第二GaN膜的温度区域（质量传输方式）的步骤，其中生长速率通过气相中的材料扩散来确定。此时，步骤（2）中的生长温度高于步骤（1）中的生长温度。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2007116152A A-plane nitride semiconductor single crystal substrate having flat side-surfaces 有权
标题翻译： A-PLANE NITRIDE SEMICONDUCTOR具有平面表面的单晶衬底
公开(公告)号：JP2007116152A
公开(公告)日：2007-05-10
申请号：JP2006278259
申请日：2006-10-12
申请人： Samsung Corning Co Ltd , 三星コーニング株式会社
发明人： SHIN HYUN MIN , LEE KI SOO
IPC分类号： H01L21/02 , C23C16/01 , C30B29/38 , H01L21/205
CPC分类号： C30B29/40 , C30B25/02
摘要： PROBLEM TO BE SOLVED: To provide an a-plane nitride semiconductor single crystal substrate having flat side-surfaces in crystallographic orientations (orientation flats) as a marker of a plane orientation to facilitate discrimination of a plane orientation.
SOLUTION: Provided is an a-plane nitride semiconductor single crystal substrate characterized by having a major surface oriented to be an a-plane ({11-20}) and one to three flat side-surfaces in crystallographic orientations (orientation flats).
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有作为平面取向的标记的结晶取向（取向平面）中的平坦侧面的a面氮化物半导体单晶衬底，以便于区分平面取向。解决方案：提供一种a面氮化物半导体单晶衬底，其特征在于将主表面定向为a面（ä11-20}）和晶体取向（取向平面）中的一至三个平坦侧表面，。版权所有（C）2007，JPO＆INPIT

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