专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2016039830A1 USE OF AMBIENT-ROBUST SOLUTION PROCESSING FOR PREPARING NANOSCALE ORGANIC FERROELECTRIC FILMS 审中-公开
标题翻译：用于制备纳米有机电解膜的环境稳定解决方案的应用
公开(公告)号：WO2016039830A1
公开(公告)日：2016-03-17
申请号：PCT/US2015/033547
申请日：2015-06-01
申请人： SABIC GLOBAL TECHNOLOGIES B.V. , PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N.
IPC分类号： H01L51/30
CPC分类号： H01L27/11507 , C09D127/16 , C23C16/00 , H01L21/0212 , H01L21/02282 , H01L27/1159 , H01L28/40 , H01L29/516 , H01L51/052 , C08L33/12 , C08L25/06 , C08L71/12
摘要： Disclosed is a method for preparing a ferroelectric film having ferroelectric hysteresis properties, the method comprising (a) obtaining a composition comprising a solvent and an organic ferroelectric polymer solubilized therein, (b) heating the composition to above 75 °C and below the boiling point of the solvent, (c) depositing the heated composition onto a substrate; and (d) annealing the heated composition to form a ferroelectric film having ferroelectric hysteresis properties and a thickness of 400 nm or less.
摘要翻译：公开了一种制备具有铁电滞后特性的铁电体膜的方法，该方法包括（a）获得包含溶剂和溶解在其中的有机铁电聚合物的组合物，（b）将组合物加热至高于75℃并低于沸点的溶剂，（c）将加热的组合物沉积在基材上; 和（d）对加热的组合物进行退火以形成具有铁电滞后性和400nm以下的厚度的铁电体膜。

2. 发明申请

WO2016039831A1 METHODS FOR PRODUCING A THIN FILM FERROELECTRIC DEVICE USING A TWO-STEP TEMPERATURE PROCESS 审中-公开
标题翻译：使用两步温度过程生产薄膜电极装置的方法
公开(公告)号：WO2016039831A1
公开(公告)日：2016-03-17
申请号：PCT/US2015/034126
申请日：2015-06-04
申请人： SABIC GLOBAL TECHNOLOGIES B.V. , PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEN, Ihab, N. , KHAN, Mohd, A.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEN, Ihab, N. , KHAN, Mohd, A.
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L27/1159 , C09D127/16 , H01L21/02118 , H01L21/02282 , H01L21/28176 , H01L21/321 , H01L21/324 , H01L27/11507 , H01L29/516 , H01L29/6684 , H01L29/78391 , H01L37/02 , H01L37/025 , H01L41/1132 , H01L41/193 , H01L41/317 , H01L41/45
摘要： Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode.
摘要翻译：对铁电体的制造方法进行说明。一种方法包括将有机聚合物铁电层定位在两个导电材料之间以形成叠层。堆叠可以进行两步热处理。第一热处理步骤将有机聚合物铁电前体转变为具有铁电滞后特性的铁电材料，第二热处理步骤使铁电体材料密集，得到铁电体器件。薄膜铁电体元件可以包括薄膜铁电电容器，薄膜铁电晶体管或薄膜铁电二极管。

3. 发明申请

WO2014158956A1 FERROELECTRIC CAPACITOR WITH IMPROVED FATIGUE AND BREAKDOWN PROPERTIES 审中-公开
标题翻译：具有改进的疲劳和断裂特性的电磁电容器
公开(公告)号：WO2014158956A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/021091
申请日：2014-03-06
申请人： SAUDI BASIC INDUSTRIES CORPORATION , KHAN, Mohd, A. , ALSHAREEF, Husam, N. , ODEH, Ihab, N. , ALMADHOUN, Mahmoud, N.
发明人： KHAN, Mohd, A. , ALSHAREEF, Husam, N. , ODEH, Ihab, N. , ALMADHOUN, Mahmoud, N.
IPC分类号： H01L51/05 , G11C13/02 , H01L49/02 , G11C11/22
CPC分类号： G11C11/22 , G11C11/221 , H01L28/55 , H01L51/004 , H01L51/0043 , H01L51/0591 , Y10T428/24802
摘要： Disclosed is a ferroelectric material (12) and methods for its use in capacitors. The ferroelectric material (12) comprises a polymer blend comprising a ferroelectric polymer (12a) and a dielectric polymer (12b) having a low dielectric constant. The dielectric polymer (12b) can phase separate from the ferroelectric polymer (12a) such that a plurality of separated regions (12b) are formed within the ferroelectric polymer (12a). The ferroelectric material (12) is disposed between two electrodes (11) and (13). The plurality of regions (12b) act as charge-trap regions to store charge and prevent charge carriers to move freely throughout the ferroelectric polymer (12a).
摘要翻译：公开了铁电材料（12）及其用于电容器的方法。铁电材料（12）包括包含铁电聚合物（12a）和具有低介电常数的电介质聚合物（12b）的聚合物共混物。电介质聚合物（12b）可以与铁电聚合物（12a）相分离，使得在铁电聚合物（12a）内形成多个分离区域（12b）。铁电材料（12）设置在两个电极（11）和（13）之间。多个区域（12b）充当电荷捕获区域以存储电荷并防止电荷载流子在整个铁电聚合物（12a）中自由移动。

4. 发明申请

WO2016028356A1 NON-VOLATILE FERROELECTRIC MEMORY CELLS WITH MULTILEVEL OPERATION 审中-公开
标题翻译：具有多次操作的非挥发性电磁记忆体
公开(公告)号：WO2016028356A1
公开(公告)日：2016-02-25
申请号：PCT/US2015/033983
申请日：2015-06-03
申请人： SABIC GLOBAL TECHOLOGIES B.V , PARK, Ji, Hoon , ALSHAREEF, Husam, N. , KHAN, Mohd, A. , ODEN, Ihab, N.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , KHAN, Mohd, A. , ODEN, Ihab, N.
IPC分类号： H01L43/08 , G11C11/15
CPC分类号： G11C11/2275 , G11C11/221 , G11C11/2273 , G11C11/2277 , G11C11/5657 , H01L27/11509 , H01L27/20
摘要： Ferroelectric components, such as the ferroelectric field effect transistors (FeFETs), ferroelectric capacitors and ferroelectric diodes described above may be operated as multi-level memory cells as described by the present invention. Storing multiple bits of information in each multi-level memory cell may be performed by a controller coupled to an array of the ferroelectric components configured as ferroelectric memory cells. The controller may execute the steps of receiving a bit pattern for writing to a multi-level memory cell comprising a ferroelectric layer; selecting a pulse duration for applying a write pulse to the memory cell based, at least in part, on the received bit pattern; and applying at least one write pulse to the memory cell having the selected pulse duration, in which the at least one write pulse creates a remnant polarization within the ferroelectric layer that is representative of the received bit pattern.
摘要翻译：诸如铁电场效应晶体管（FeFET），铁电电容器和铁电二极管的铁电元件可以作为如本发明所述的多电平存储器单元来操作。在每个多级存储器单元中存储多个位的信息可以由耦合到被配置为铁电存储单元的铁电元件阵列的控制器来执行。控制器可以执行以下步骤：接收用于写入到包括铁电层的多层存储单元的位模式; 至少部分地基于所接收的位模式，选择用于将写入脉冲施加到存储器单元的脉冲持续时间; 以及向具有所选择的脉冲持续时间的存储单元施加至少一个写入脉冲，其中所述至少一个写入脉冲在所述铁电层内产生代表所接收的位模式的剩余极化。

5. 发明申请

WO2014158970A1 FRACTIONAL ORDER CAPACITOR BASED ON DIELECTRIC POLYMER DOPED WITH CONDUCTIVE NANO-FILLERS 审中-公开
标题翻译：基于导电纳米填料的介电聚合物的分层订购电容器
公开(公告)号：WO2014158970A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/021173
申请日：2014-03-06
申请人： SAUDI BASIC INDUSTRIES CORPORATION , ALMADHOUN, Mahmoud, N. , ELSHURAFA, Amro , SALAMA, Khaled , ALSHAREEF, Husam, N.
发明人： ALMADHOUN, Mahmoud, N. , ELSHURAFA, Amro , SALAMA, Khaled , ALSHAREEF, Husam, N.
IPC分类号： H01G4/20
CPC分类号： H01G4/005 , B82Y30/00 , H01G4/206 , H03K5/14 , H05K1/182
摘要： The invention discloses a fractional order capacitor. The fractional order capacitor is defined as having an adapted dielectric impedance. To obtain the required impedance of the dielectric layer, conductive nanofillers are added to the dielectric, therefore resulting in the formation of a dielectric nanocomposite layer. In the invention a polymer matrix (like PVDF-TRFE) is combine with graphene. The graphene can be partially or completely unoxidized. The invention discloses a fractional order capacitor comprising a dielectric nanocomposite layer of thickness t, comprising a first side and a second side opposite the first side, a first electrode layer coupled to the first side of the dielectric nanocomposite layer, a second electrode layer coupled to the second side of the dielectric layer, a complex impedamce phase angle dependent on at least a material weight percentage of filler material in a dielectric nanocomposite layer.
摘要翻译：本发明公开了一种分数阶电容器。分数阶电容器被定义为具有适应的介电阻抗。为了获得电介质层的所需阻抗，将导电纳米填料添加到电介质中，从而形成电介质纳米复合层。在本发明中，聚合物基质（如PVDF-TRFE）与石墨烯结合。石墨烯可以部分或完全未氧化。本发明公开了一种包括厚度t的电介质纳米复合层的分数阶电容器，包括第一侧和与第一侧相对的第二侧，耦合到电介质纳米复合层的第一侧的第一电极层，耦合到电介质层的第二面，复阻抗相位角取决于电介质纳米复合材料层中填料材料的至少材料重量百分比。

6. 发明公开

EP3192099A1 METHODS FOR PRODUCING A THIN FILM FERROELECTRIC DEVICE USING A TWO-STEP TEMPERATURE PROCESS 有权
标题翻译：使用两步温度工艺生产薄膜铁电装置的方法
公开(公告)号：EP3192099A1
公开(公告)日：2017-07-19
申请号：EP15839892.5
申请日：2015-06-04
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N. , KHAN, Mohd, A.
IPC分类号： H01L27/115
摘要： Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode.
摘要翻译：描述了用于制造铁电器件的方法。一种方法包括将有机聚合物铁电层置于两种导电材料之间以形成叠层。该堆可以经受两步热处理过程。第一热处理步骤将有机聚合物铁电体前体转变为具有铁电滞后性质的铁电材料，并且第二热处理步骤使铁电材料密度化以获得铁电体器件。薄膜铁电体器件可以包括薄膜铁电体电容器，薄膜铁电体晶体管或薄膜铁电体二极管。

7. 发明公开

EP3143650A1 NON-VOLATILE FERROELECTRIC MEMORY CELLS WITH MULTILEVEL OPERATION 审中-公开
标题翻译： NICHTFLÜCHTIGEFERROELEKTRISCHE SPEICHERZELLEN MIT MEHRSTUFIGEM BETRIEB
公开(公告)号：EP3143650A1
公开(公告)日：2017-03-22
申请号：EP15834150.3
申请日：2015-06-03
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , KHAN, Mohd, A. , ODEH, Ihab, N.
IPC分类号： H01L43/08 , G11C11/15
CPC分类号： G11C11/2275 , G11C11/221 , G11C11/2273 , G11C11/2277 , G11C11/5657 , H01L27/11509 , H01L27/20
摘要： Ferroelectric components, such as the ferroelectric field effect transistors (FeFETs), ferroelectric capacitors and ferroelectric diodes described above may be operated as multi-level memory cells as described by the present invention. Storing multiple bits of information in each multi-level memory cell may be performed by a controller coupled to an array of the ferroelectric components configured as ferroelectric memory cells. The controller may execute the steps of receiving a bit pattern for writing to a multi-level memory cell comprising a ferroelectric layer; selecting a pulse duration for applying a write pulse to the memory cell based, at least in part, on the received bit pattern; and applying at least one write pulse to the memory cell having the selected pulse duration, in which the at least one write pulse creates a remnant polarization within the ferroelectric layer that is representative of the received bit pattern.
摘要翻译：如上所述的铁电场效应晶体管（FeFET），铁电电容器和铁电二极管等铁电元件可以作为如本发明所述的多电平存储单元来操作。在每个多级存储器单元中存储多个位的信息可以由耦合到被配置为铁电存储器单元的铁电元件阵列的控制器来执行。控制器可以执行以下步骤：接收用于写入到包括铁电层的多层存储单元的位模式; 至少部分地基于所接收的位模式，选择用于将写入脉冲施加到存储器单元的脉冲持续时间; 以及向具有所选择的脉冲持续时间的存储单元施加至少一个写入脉冲，其中所述至少一个写入脉冲在所述铁电层内产生代表所接收的位模式的剩余极化。

8. 发明授权

EP3192099B1 METHODS FOR PRODUCING A THIN FILM FERROELECTRIC DEVICE USING A TWO-STEP TEMPERATURE PROCESS 有权
公开(公告)号：EP3192099B1
公开(公告)日：2019-12-11
申请号：EP15839892.5
申请日：2015-06-04
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEN, Ihab, N. , KHAN, Mohd, A.
IPC分类号： H01L41/45 , H01L41/193 , H01L41/317

9. 发明授权

EP3192108B1 USE OF AMBIENT-ROBUST SOLUTION PROCESSING FOR PREPARING NANOSCALE ORGANIC FERROELECTRIC FILMS 有权
公开(公告)号：EP3192108B1
公开(公告)日：2019-03-27
申请号：EP15840000.2
申请日：2015-06-01
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N.
IPC分类号： H01L51/30

10. 发明公开

EP3192108A1 USE OF AMBIENT-ROBUST SOLUTION PROCESSING FOR PREPARING NANOSCALE ORGANIC FERROELECTRIC FILMS 审中-公开
标题翻译：使用环境稳定的溶液处理制备纳米级有机铁电薄膜
公开(公告)号：EP3192108A1
公开(公告)日：2017-07-19
申请号：EP15840000.2
申请日：2015-06-01
申请人： SABIC Global Technologies B.V.
发明人： PARK, Ji, Hoon , ALSHAREEF, Husam, N. , ODEH, Ihab, N.
IPC分类号： H01L51/30
CPC分类号： H01L27/11507 , C09D127/16 , C23C16/00 , H01L21/0212 , H01L21/02282 , H01L27/1159 , H01L28/40 , H01L29/516 , H01L51/052 , C08L33/12 , C08L25/06 , C08L71/12
摘要： Disclosed is a method for preparing a ferroelectric film having ferroelectric hysteresis properties, the method comprising (a) obtaining a composition comprising a solvent and an organic ferroelectric polymer solubilized therein, (b) heating the composition to above 75° C. and below the boiling point of the solvent, (c) depositing the heated composition onto a substrate; and (d) annealing the heated composition to form a ferroelectric film having ferroelectric hysteresis properties and a thickness of 400 nm or less.
摘要翻译：公开了一种用于制备具有铁电滞后性质的铁电薄膜的方法，所述方法包括：（a）获得包含溶剂和溶解于其中的有机铁电聚合物的组合物，（b）将所述组合物加热至高于75℃且低于沸腾（c）将经加热的组合物沉积到基材上; （d）将加热的组合物退火以形成具有铁电滞后性质和400nm或更小的厚度的铁电薄膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式