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    • 3. 发明授权
    • Porous metal body and process for producing same
    • 多孔金属体及其制造方法
    • US5625861A
    • 1997-04-29
    • US544891
    • 1995-10-18
    • Takashi NishiAkira KosakaJun FunakoshiRyutaro Motoki
    • Takashi NishiAkira KosakaJun FunakoshiRyutaro Motoki
    • B01D39/20B22C9/06B22F3/11B22F5/00B22F1/00
    • B01D39/2034B22C9/06B22F3/1103B22F5/007B22F2998/10
    • The porous metal body of the inventtion has a porosity of 7 to 50%, pore sizes of 1 to 500 .mu.m and a pore distribution satisfying the relationship of:(D.sub.95 -D.sub.5)/D.sub.50 .ltoreq.2.5wherein D.sub.5 is the pore size on the cumulative distribution curve of the pore sizes at a cumulative frequency of 5%, D.sub.50 is the pore size on the curve at a cumulative frequency of 50% and D.sub.95 is the pore size on the curve at a cumulative frequency of 95%. The porous body is improved in porosity characteristics and mechanical strength.The porous metal body is prepared by pressing a metal powder to shape and sintering the shaped body by hot isostatic pressing, or alternatively by enclosing a metal powder in a capsule, subjecting the encapsulated powder to a primary sintering treatment in an isostatic medium to form a primary sintered porous body and heat-treating the sintered body with the capsule removed or without removing the capsule.
    • 本发明的多孔金属体的孔隙率为7〜50%,孔径为1〜500μm,孔分布满足以下关系:(D95-D5)/ D50 <2.5其中D5为孔径 在累积频率为5%的孔径的累积分布曲线上,D50是累积频率为50%的曲线上的孔径,D95为累积频率为95%的曲线上的孔径。 多孔体的孔隙率特性和机械强度得到改善。 多孔金属体是通过压制金属粉末,通过热等静压来形成和烧结成形体,或者通过将金属粉末包封在胶囊中,使包封的粉末在等静压介质中进行初步烧结处理,形成 初级烧结多孔体,并且在除去胶囊或不除去胶囊之前对烧结体进行热处理。
    • 5. 发明授权
    • Level shift circuit, method for driving the same, and semiconductor circuit device having the same
    • 电平移位电路,其驱动方法以及具有该电平移位电路的半导体电路器件
    • US08143916B2
    • 2012-03-27
    • US12479221
    • 2009-06-05
    • Jun Funakoshi
    • Jun Funakoshi
    • H03K19/0175H03L5/00
    • H03K19/018528
    • A level shift circuit includes a level shift section for receiving a low potential signal oscillating between a high potential and a ground potential and converting it into a high potential signal oscillating between the high potential and the ground potential, the level shift section being connected to at least a high potential power supply for generating the high potential, a low potential power supply for generating the low potential, and a ground power supply for generating the ground potential, an inverter section for inverting-amplifying the high potential signal from the level shift section, and an N-type MOS transistor for supplying the ground potential to the inverter section, the N-type MOS transistor being connected in series to the inverter section between the high potential power supply and the ground power supply and having its gate electrode connected to the low potential power supply.
    • 电平移位电路包括电平移位部分,用于接收在高电位和地电位之间振荡的低电位信号,并将其转换成在高电位和地电位之间振荡的高电位信号,电平移位部分连接到 用于产生高电位的至少一个高电位电源,用于产生低电位的低电位电源和用于产生接地电位的接地电源;反相器部分,用于将来自电平移位部分的高电位信号 以及用于向逆变器部提供接地电位的N型MOS晶体管,所述N型MOS晶体管与所述高电位电源和所述接地电源之间的所述逆变器部串联连接,并且其栅电极连接到 低电位电源。