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1. 发明授权

US4093577A Photocurable resin compositions 失效
标题翻译：光固化树脂组合物
公开(公告)号：US4093577A
公开(公告)日：1978-06-06
申请号：US773650
申请日：1977-03-02
申请人： Ryozo Konno , Akira Ikeda , Toshimitsu Ugai , Akio Hirose
发明人： Ryozo Konno , Akira Ikeda , Toshimitsu Ugai , Akio Hirose
IPC分类号： C08F299/04 , C08G63/21 , C08G63/46 , C08G63/685 , C08L67/08 , G03F7/032 , C09D3/64 , C09D5/32 , C09D11/10
CPC分类号： C08L67/08 , C08F299/0428 , C08G63/21 , C08G63/46 , C08G63/685 , G03F7/032 , Y10S522/904
摘要： A photocurable resin composition comprising a photopolymerizable photosensitizing compound (A) together with or without a photopolymerizable photosensitizing compound (B), the compound (A) being prepared by esterifying with acrylic or methacrylic acid or the like a resin having an OH equivalent of 150 - 500 produced by esterification of a dialkylaminobenzoic acid, a polybasic acid or, if desired, a fatty acid having at least 9 carbon atoms, with a polyhydric alcohol, and the compound (B) being prepared by repeating the aforesaid process for preparing the compound (A) except that a carboxyl group-containing benzophenone derivative is substituted for the dialkylaminobenzoic acid.
摘要翻译：一种光可固化树脂组合物，其包含可光聚合的光敏化合物（A）和/或不含可光聚合的光敏化合物（B），化合物（A）通过用丙烯酸或甲基丙烯酸等与OH当量为150〜通过二烷基氨基酸，多元酸或如果需要，具有至少9个碳原子的脂肪酸与多元醇酯化生成的化合物（B），并且通过重复上述制备化合物的方法制备化合物（B） A），只是含羧基的二苯甲酮衍生物代替二烷基氨基苯甲酸。

2. 发明申请

US20080303161A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080303161A1
公开(公告)日：2008-12-11
申请号：US12042716
申请日：2008-03-05
申请人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
发明人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC分类号： H01L23/48
CPC分类号： H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
摘要： A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
摘要翻译：一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或金属或合金。通过制造方法，可以有利地将半导体元件与金属基板结合。

3. 发明申请

US20140030634A1 METHOD FOR BONDING ALUMINUM-BASED METALS 审中-公开
标题翻译：用于粘结铝基金属的方法
公开(公告)号：US20140030634A1
公开(公告)日：2014-01-30
申请号：US13819390
申请日：2011-08-30
申请人： Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
发明人： Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
IPC分类号： B23K20/00
摘要： An inexpensive bonding method is provided to bond materials constituted of an aluminum-based metal to each other at a low temperature and a low pressure while inhibiting deformation, without requiring the use of a flux and minimizing the influence on the base materials and the periphery. Also provided are various bonded parts obtained by the bonding method. An insert material comprising Zn as an element that undergoes a eutectic reaction with Al is interposed between two materials constituted of an aluminum-based metal. The two materials are heated, while being pressed against each other, to a temperature at which the eutectic reaction takes place, thereby generating, at the bonding interface between the two materials, a melt due to the eutectic reaction with some of the Al contained in the base materials and discharging the Al oxide films from the bonding interface together with the melt. Thus, the two materials are bonded.
摘要翻译：提供廉价的接合方法，以便在不需要使用助焊剂并且最小化对基材和周边的影响的同时，在低温和低压下将由铝基金属构成的材料彼此粘合，同时抑制变形。还提供了通过接合方法获得的各种粘合部件。包含Zn作为与Al发生共晶反应的元素的插入材料插入由铝基金属构成的两种材料之间。将这两种材料在彼此挤压的同时加热到发生共晶反应的温度，从而在两种材料之间的结合界面处产生熔体，这是由于与包含在其中的一些Al的共晶反应基材并与熔融物一起从接合界面排出Al氧化物膜。因此，两种材料结合。

4. 发明申请

US20060150387A1 Dissimilar metal joining method 有权
标题翻译：异种金属接合方法
公开(公告)号：US20060150387A1
公开(公告)日：2006-07-13
申请号：US11301115
申请日：2005-12-13
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23P25/00
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
摘要翻译：根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。

5. 发明授权

US08020749B2 Dissimilar metal joining method 有权
标题翻译：异种金属接合方法
公开(公告)号：US08020749B2
公开(公告)日：2011-09-20
申请号：US12944421
申请日：2010-11-11
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23K1/00 , B23K1/002 , B23K1/008
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
摘要翻译：根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。

6. 发明授权

US07900578B2 Carrying system and processing equipment 有权
标题翻译：搬运系统及加工设备
公开(公告)号：US07900578B2
公开(公告)日：2011-03-08
申请号：US11783562
申请日：2007-04-10
申请人： Akio Hirose , Katsuhiko Goto
发明人： Akio Hirose , Katsuhiko Goto
IPC分类号： B05C13/00
CPC分类号： F04B49/08 , B05B13/0221 , B05B13/0242 , B05B13/0431 , B25J9/0096
摘要： A carrying system includes first and second carrying machines each of which includes a holding unit, a base and a linkage having pivotally joined first and second links. The holding unit can be moved, by turning the second link relative to the first link which is turned relative to the base, along a substantially arc carrying route extending round the pedestal between a loading position and a processing position. The arc carrying route is closer to the pedestal with respect to an imaginary circle having its center on the pedestal and a radius corresponding to the distance between the pedestal and either of the loading position and the processing position.
摘要翻译：承载系统包括第一和第二搬运机械，每个承载机器包括保持单元，基座和具有枢转连接的第一和第二连杆的连杆。可以通过相对于相对于基座转动的第一连杆转动第二连杆，沿着在装载位置和处理位置之间的基座延伸的基本上圆弧的运送路线来移动保持单元。电弧携带路径相对于其在基座上的中心的假想圆更靠近基座，并且与基座与装载位置和处理位置中的任一个之间的距离相对应。

7. 发明授权

US07850059B2 Dissimilar metal joining method 有权
标题翻译：异种金属接合方法
公开(公告)号：US07850059B2
公开(公告)日：2010-12-14
申请号：US11301115
申请日：2005-12-13
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23K1/00 , B23K1/002 , B23K1/008
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
摘要翻译：根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。

8. 发明授权

US07984840B2 Dissimilar metal joining method 有权
公开(公告)号：US07984840B2
公开(公告)日：2011-07-26
申请号：US12944417
申请日：2010-11-11
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23K1/00 , B23K1/002 , B23K1/008
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

9. 发明授权

US07361590B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07361590B2
公开(公告)日：2008-04-22
申请号：US11334391
申请日：2006-01-19
申请人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
发明人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
摘要： A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
摘要翻译：一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或金属或合金。通过制造方法，可以有利地将半导体元件与金属基板结合。

10. 发明申请

US20060160330A1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060160330A1
公开(公告)日：2006-07-20
申请号：US11334391
申请日：2006-01-19
申请人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
发明人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC分类号： H01L21/78 , H01L21/20 , H01L23/48
CPC分类号： H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
摘要： A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
摘要翻译：一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或金属或合金。通过制造方法，可以有利地将半导体元件与金属基板结合。

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