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1. 发明授权

US08217405B2 Light-emitting diode and method for fabrication thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08217405B2
公开(公告)日：2012-07-10
申请号：US12952427
申请日：2010-11-23
申请人： Ryouichi Takeuchi , Atsushi Matsumura , Takashi Watanabe
发明人： Ryouichi Takeuchi , Atsushi Matsumura , Takashi Watanabe
IPC分类号： H01L21/00
CPC分类号： H01L33/02 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , Y10S438/936 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.
摘要翻译：发光二极管包括基板，包括形成在基板上的pn结型发光部的化合物半导体层，配置在化合物半导体层上并由对所发出的光进行光学透明化的导电材料形成的导体来自发光部分和具有比导体更高的电阻并且设置在化合物半导体层和电导体之间的中间的高电阻层。在发光二极管灯的构造中，通过引线接合使设置在跨越发光层的与导电体相反一侧的半导体层上的电导体和电极呈现相等的电位。发光二极管的亮度大，静电击穿电压也好。

2. 发明授权

US07863630B2 Light-emitting diode and method for fabrication thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07863630B2
公开(公告)日：2011-01-04
申请号：US11994606
申请日：2006-07-05
申请人： Ryouichi Takeuchi , Atsushi Matsumura , Takashi Watanabe
发明人： Ryouichi Takeuchi , Atsushi Matsumura , Takashi Watanabe
IPC分类号： H01L21/00
CPC分类号： H01L33/02 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , Y10S438/936 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.
摘要翻译：发光二极管包括基板，包括形成在基板上的pn结型发光部的化合物半导体层，配置在化合物半导体层上并由对所发出的光进行光学透明化的导电材料形成的导体来自发光部分和具有比导体更高的电阻并且设置在化合物半导体层和电导体之间的中间的高电阻层。在发光二极管灯的构造中，通过引线接合使设置在跨越发光层的与导电体相反一侧的半导体层上的电导体和电极呈现相等的电位。发光二极管的亮度大，静电击穿电压也好。

3. 发明申请

US20080315176A1 Light-Emitting Diode and Method For Fabrication Thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080315176A1
公开(公告)日：2008-12-25
申请号：US11994606
申请日：2006-07-05
申请人： Ryouichi Takeuchi , Atsushi Matsumura , Takashi Watanabe
发明人： Ryouichi Takeuchi , Atsushi Matsumura , Takashi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , Y10S438/936 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.
摘要翻译：发光二极管包括基板，包括形成在基板上的pn结型发光部的化合物半导体层，配置在化合物半导体层上并由对所发出的光进行光学透明化的导电材料形成的导体来自发光部分和具有比导体更高的电阻并且设置在化合物半导体层和电导体之间的中间的高电阻层。在发光二极管灯的构造中，通过引线接合使设置在跨越发光层的与导电体相反一侧的半导体层上的电导体和电极呈现相等的电位。发光二极管的亮度大，静电击穿电压也好。

4. 发明授权

US07842966B2 Compound semiconductor light-emitting diode and method for fabrication thereof 有权
标题翻译：化合物半导体发光二极管及其制造方法
公开(公告)号：US07842966B2
公开(公告)日：2010-11-30
申请号：US11994710
申请日：2006-07-05
申请人： Takashi Watanabe , Ryouichi Takeuchi
发明人： Takashi Watanabe , Ryouichi Takeuchi
IPC分类号： H01L31/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/387 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135)of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm−3 or less.
摘要翻译：化合物半导体发光二极管包括由铝 - 镓铟磷化物形成的发光层（133），具有由III-V族化合物半导体单独形成的组分层的发光部分（13），透明支撑层（14），其结合到所述发光部（13）的最外表面层（135）之一并且对从所述发光层（133）发射的光透明;以及接合层（141），形成在所述发光部支撑层（14）和含有浓度为1×1020cm-3以下的氧原子的发光部（13）的最外表面层（135）之一。

5. 发明授权

US08399277B2 Compound semiconductor light-emitting diode and method for fabrication thereof 有权
标题翻译：化合物半导体发光二极管及其制造方法
公开(公告)号：US08399277B2
公开(公告)日：2013-03-19
申请号：US12911599
申请日：2010-10-25
申请人： Takashi Watanabe , Ryouichi Takeuchi
发明人： Takashi Watanabe , Ryouichi Takeuchi
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/387 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135) of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm−3 or less.
摘要翻译：化合物半导体发光二极管包括由铝 - 镓铟磷化物形成的发光层（133），具有由III-V族化合物半导体单独形成的组分层的发光部分（13），透明支撑层（14），其结合到所述发光部（13）的最外表面层（135）之一并且对从所述发光层（133）发射的光透明;以及接合层（141），形成在所述发光部支撑层（14）和含有浓度为1×1020cm-3以下的氧原子的发光部（13）的最外表面层（135）之一。

6. 发明申请

US20090121242A1 COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF 有权
标题翻译：化合物半导体发光二极管及其制造方法
公开(公告)号：US20090121242A1
公开(公告)日：2009-05-14
申请号：US11994710
申请日：2006-07-05
申请人： Takashi Watanabe , Ryouichi Takeuchi
发明人： Takashi Watanabe , Ryouichi Takeuchi
IPC分类号： H01L21/00 , H01L33/00 , H01L21/02
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/387 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A compound semiconductor light-emitting diode includes a light-emitting layer formed of aluminum-gallium-indium phosphide, a light-emitting part 13 having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer 14 bonded to one of the outermost surface layers 135 of the light-emitting part 13 and transparent to the light emitted from the light-emitting layer 133, and a bonding layer 141 formed between the supporting layer 14 and the one of the outermost surface layers 135 of the light-emitting part 13 containing oxygen atoms at a concentration of 1×1020 cm−3 or less. The compound semiconductor light-emitting diode can avoid exertion of stress on the light-emitting part, suppress the occurrence of a crystal defect, enhance the bonding strength between the light-emitting part and the supporting layer, further decrease electric resistance in the bonding interface and thereby enhance the forward voltage (Vf), also heighten the reverse voltage and materialize impartation of high luminance.
摘要翻译：化合物半导体发光二极管包括由铝 - 镓铟磷化物形成的发光层，具有分别由III-V族化合物半导体形成的组分层的发光部分13，与一个的发光部13的最外表面层135，并且对从发光层133发射的光透明，并且在支撑层14和光的最外表面层135中的一个之间形成接合层141 - 含有浓度为1×10 20 cm -3以下的氧原子的部分13。化合物半导体发光二极管可以避免在发光部分上产生应力，抑制晶体缺陷的发生，增强发光部分和支撑层之间的接合强度，进一步降低接合界面中的电阻从而提高正向电压（Vf），也提高了反向电压并实现了高亮度的赋予。

7. 发明申请

US20210063427A1 LIQUID SURFACE IMAGING DEVICE AND LIQUID DISCHARGE APPARATUS 有权
公开(公告)号：US20210063427A1
公开(公告)日：2021-03-04
申请号：US17004684
申请日：2020-08-27
申请人： Yuta Moriwaki , Atsushi Yamamoto , Taku Hatakeyama , Takashi Watanabe
发明人： Yuta Moriwaki , Atsushi Yamamoto , Taku Hatakeyama , Takashi Watanabe
IPC分类号： G01N35/10 , B41J2/135
摘要： A liquid surface imaging device includes an irradiator including a plurality of lightings, the irradiator configured to irradiate a liquid surface in a nozzle of a liquid discharge head with lights emitted from the plurality of lightings, and an imaging device configured to image the liquid surface. The plurality of lightings is arranged point-symmetrically with a center of the irradiator as a point of symmetry.

8. 发明授权

US10807378B2 Ink set and image forming device 有权
公开(公告)号：US10807378B2
公开(公告)日：2020-10-20
申请号：US16293701
申请日：2019-03-06
申请人： Takashi Watanabe , Taku Hatakeyama , Kaoru Tadokoro , Sho Oyamatsu , Tomohiro Inoue , Hiroshi Gotou , Mio Kumai
发明人： Takashi Watanabe , Taku Hatakeyama , Kaoru Tadokoro , Sho Oyamatsu , Tomohiro Inoue , Hiroshi Gotou , Mio Kumai
IPC分类号： B41J2/14 , B41J2/21 , B41J2/155 , C09D11/38 , B41J2/165 , C09D11/322
摘要： An ink set comprises black ink having a static surface tension A and yellow ink having a static surface tension B, wherein the static surface tension A is 28.7 mN/m or more and greater than the static surface tension B, wherein the ink set is used in an image forming device including an inkjet head including a nozzle plate including a first nozzle array and a second nozzle array disposed adjacent to the first nozzle array, the first nozzle array including multiple first nozzles configured to discharge the black ink and a second nozzle array including multiple second nozzles configured to discharge the yellow ink wherein each nozzle of the multiple first nozzles and the multiple second nozzles has a cylindrical portion having a length of 25 μm or longer along an axial direction with an opening on an ink discharging side of the nozzle plate.

9. 发明授权

US10618331B2 Ink set and image forming device 有权
公开(公告)号：US10618331B2
公开(公告)日：2020-04-14
申请号：US16293694
申请日：2019-03-06
申请人： Takashi Watanabe , Taku Hatakeyama , Kaoru Tadokoro , Sho Oyamatsu , Tomohiro Inoue , Hiroshi Gotou , Mio Kumai
发明人： Takashi Watanabe , Taku Hatakeyama , Kaoru Tadokoro , Sho Oyamatsu , Tomohiro Inoue , Hiroshi Gotou , Mio Kumai
IPC分类号： B41M5/00 , C09D11/033 , C09D11/40 , B41J2/155 , B41J2/21 , B41J2/165
CPC分类号： B41M5/0023 , B41J2/155 , B41J2/16535 , B41J2/2103 , C09D11/033 , C09D11/40 , B41J2002/1655 , B41J2002/16558
摘要： An ink set comprises black ink having a static surface tension A and yellow ink having a static surface tension B, wherein the static surface tension A is by 0.6 mN/m or more greater than the static surface tension B, wherein the ink set is used in an image forming device including an inkjet head including a nozzle plate including a first nozzle array and a second nozzle array disposed adjacent to the first nozzle array, the first nozzle array including multiple first nozzles configured to discharge the black ink and a second nozzle array including multiple second nozzles configured to discharge the yellow ink, wherein each nozzle of the multiple first nozzles and the multiple second nozzles has a cylindrical portion having a length of 25 μm or longer along an axial direction with an opening on an ink discharging side of the nozzle plate.

10. 发明授权

US09279766B2 Information terminal device and object identification device 有权
标题翻译：信息终端设备和对象识别设备
公开(公告)号：US09279766B2
公开(公告)日：2016-03-08
申请号：US14129285
申请日：2012-07-27
申请人： Masaru Matsuoka , Takashi Watanabe , Tetsuhiro Kaya
发明人： Masaru Matsuoka , Takashi Watanabe , Tetsuhiro Kaya
IPC分类号： G01N21/55 , G01S15/02 , G02F1/1333 , G02F1/1335 , H03K17/96 , G09G5/00 , G02F1/133
CPC分类号： G01N21/55 , G01S15/02 , G02F1/13338 , G02F1/1336 , G02F2001/13312 , G09G5/00 , G09G2330/12 , G09G2354/00 , G09G2360/145 , H03K17/9631
摘要： An information terminal device (100) comprises a light source (171) that directs light at a display face on which a display component (110) is disposed, an object detecting sensor (170) that receives light from the display face, and a controller (300) that determines whether or not a sheet (180) has been affixed to the display face on the basis of the output from the object detecting sensor (170).
摘要翻译：信息终端装置（100）包括：在设置有显示部件（110）的显示面上引导光的光源（171），从显示面接收光的物体检测传感器（170）（300），其基于来自所述物体检测传感器（170）的输出来确定片材（180）是否已被固定到所述显示面。

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