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1. 发明授权

US5934546A Process for brazing die-cast aluminum material 失效
标题翻译：钎焊压铸铝材料的工艺
公开(公告)号：US5934546A
公开(公告)日：1999-08-10
申请号：US977446
申请日：1997-11-26
申请人： Ryotatsu Otsuka , Koji Ashida , Yuji Asano
发明人： Ryotatsu Otsuka , Koji Ashida , Yuji Asano
IPC分类号： B22D17/00 , B22D21/00 , B23K1/19 , B23K35/28 , B23K35/40 , C22C18/04 , B23K31/02
CPC分类号： B23K35/282 , B22D21/007 , B23K1/19 , B23K2203/10
摘要： A process for brazing a die-cast aluminum material, wherein a die-cast aluminum material produced at a gate speed of 20 m/s or higher is used to be brazed at a brazing temperature of 500.degree. C. or lower. Further, it is preferred that the die-cast aluminum material is produced under a casting pressure of 600 kgf/cm.sup.2 or lower, or that the die-cast aluminum material is produced while depressurizing a mold. Brazing may as well be conducted using a brazing filler metal material composed of 6 to 24 wt. % of Al and the balance consisting of Zn and impurities. In the foregoing manner, the die-cast aluminum material can be brazed by heating it to a high temperature.
摘要翻译：一种用于钎焊压铸铝材料的方法，其中使用以20m / s或更高的闸门速度制造的压铸铝材料在500℃或更低的钎焊温度下钎焊。此外，优选在600kgf / cm 2以下的铸造压力下制造压铸铝材料，或者在对模具进行减压的同时制造压铸铝材料。也可以使用由6〜24重量份的钎料构成的钎料，进行钎焊。 Al的百分比，余量由Zn和杂质组成。以上述方式，压铸铝材料可以通过将其加热到高温进行钎焊。

2. 发明授权

US6109510A Brazing material for use in a low temperature brazing and method for low temperature brazing 失效
标题翻译：用于低温钎焊的钎料和低温钎焊方法
公开(公告)号：US6109510A
公开(公告)日：2000-08-29
申请号：US080682
申请日：1998-05-18
申请人： Ryotatsu Otsuka , Masakazu Furuta , Yuji Asano
发明人： Ryotatsu Otsuka , Masakazu Furuta , Yuji Asano
IPC分类号： B23K35/28 , B23K1/19
CPC分类号： B23K35/282 , B23K35/288 , B23K2203/10
摘要： A brazing material that has a low melting point and can braze aluminum materials at a low temperature with a good wetting property is disclosed. The brazing material can include a matrix composed of Zn, a Zn--Al alloy or a Al--Zn--Si alloy having a low melting point each preferably containing 0.001 to 3.0 wt % of rare-earth element. When such a brazing material is used, aluminum materials can be brazed at a temperature of 580.degree. C. or below.
摘要翻译：公开了具有低熔点并且可以在低温下钎焊铝材料并具有良好润湿性的钎焊材料。钎焊材料可以包括由优选含有0.001〜3.0重量％的稀土元素的Zn，Zn-Al合金或低熔点的Al-Zn-Si合金构成的基体。当使用这种钎焊材料时，铝材料可以在580℃或更低的温度下钎焊。

3. 发明授权

US06531102B1 Fuel reforming apparatus 失效
标题翻译：燃料重整装置
公开(公告)号：US06531102B1
公开(公告)日：2003-03-11
申请号：US09559098
申请日：2000-04-27
申请人： Masahito Nakamura , Naoyuki Abe , Kiyoshi Kasahara , Shuichi Togasawa , Yuji Asano
发明人： Masahito Nakamura , Naoyuki Abe , Kiyoshi Kasahara , Shuichi Togasawa , Yuji Asano
IPC分类号： B01J1000
CPC分类号： F28D21/001 , B01B1/005 , B01J2219/00006 , C01B3/323 , C01B2203/00 , C01B2203/0233 , C01B2203/044 , C01B2203/047 , C01B2203/066 , C01B2203/0811 , C01B2203/0822 , C01B2203/0827 , C01B2203/0883 , C01B2203/1023 , C01B2203/1064 , C01B2203/1076 , C01B2203/1223 , C01B2203/1288 , C01B2203/1604 , F28D7/0075 , F28D7/0083 , F28D7/06 , F28D7/08 , F28D7/085 , F28D7/16 , F28D2021/0043 , F28D2021/0064 , H01M8/0612 , H01M8/0662 , Y02P20/128
摘要： A fuel reforming apparatus is provided for generating a hydrogen-rich gas. The fuel reforming apparatus includes an evaporator comprising an evaporation chamber for evaporating the fuel vapor by evaporating a hydrocarbon fuel-water mixture by an evaporator using a combustion gas formed in a combustor; a heating chamber for heating the fuel vapor by a combustion gas output from the evaporation chamber; and a guiding path for guiding the combustion gas output from the evaporation chamber to the heating chamber along the floor of the evaporating room. In the heating chamber, the fuel vapor generated in the evaporation chamber is uniformly heated in an atmosphere with a homogeneous temperature of the combustion gas output from a heating medium tube, while the fuel vapor is circulating in the vapor tube.
摘要翻译：提供一种用于产生富氢气体的燃料重整装置。燃料重整装置包括蒸发器，其包括蒸发室，用于通过使用形成在燃烧器中的燃烧气体通过蒸发器蒸发烃燃料 - 水混合物来蒸发燃料蒸气; 加热室，用于通过从蒸发室输出的燃烧气体来加热燃料蒸气; 以及用于将从蒸发室输出的燃烧气体沿着蒸发室的地板引导到加热室的引导路径。在加热室中，在燃料蒸气在蒸气管中循环的同时，在蒸发室内产生的燃料蒸气在从加热介质管输出的燃烧气体的均匀温度的气氛中均匀地加热。

4. 发明授权

US5881240A Method and device for setting speed of data transmission 失效
标题翻译：数据传输速度设定方法及装置
公开(公告)号：US5881240A
公开(公告)日：1999-03-09
申请号：US621096
申请日：1996-03-22
申请人： Yuji Asano
发明人： Yuji Asano
IPC分类号： H04N1/00 , H04N1/333 , G06F13/38 , G06F15/17
CPC分类号： H04N1/33376 , H04N1/00127 , H04N1/33323 , H04N1/00204 , H04N1/00278 , H04N2201/0015 , H04N2201/3335
摘要： Transmission, speed at which data is transmitted over a digital transmission line between a transmission device and a remote device, is set by transmitting an inquiry command to the remote device at a predetermined transmission speed; receiving, from the remote device, a response to the inquiry command; determining based on the content of the response any transmission speeds common between the remote device and the transmission device; and setting transmission speed at which transmission between the transmission device and a remote device is to be performed to one of the transmission speeds common between the remote device and the transmission device.
摘要翻译：通过以预定的传输速度向远程设备发送查询命令来设置通过传输设备和远程设备之间的数字传输线传输数据的传输速度; 从所述远程设备接收对所述查询命令的响应; 基于所述响应的内容，确定所述远程设备与所述传输设备之间共同的任何传输速度; 并且将传输设备和远程设备之间的传输的传输速度设置为远程设备和传输设备之间公用的传输速度之一。

5. 发明授权

US5796493A Facsimile machine 失效
标题翻译：传真机
公开(公告)号：US5796493A
公开(公告)日：1998-08-18
申请号：US451116
申请日：1995-05-25
申请人： Suzuyo Murai , Yuji Asano
发明人： Suzuyo Murai , Yuji Asano
IPC分类号： H04N1/327 , H04N1/00
CPC分类号： H04N1/32708 , H04N1/32704
摘要： A facsimile machine including a first facsimile-data transmitter and/or a first facsimile-data receiver, a first telephone set, a data receiver including a connector connectable to an external computer for receiving, from the computer, designating data designating a second telephone set, and a calling device which calls the second telephone set designated by the designating data, so as to connect the first telephone set to the second telephone set via a communication line.
摘要翻译：一种传真机，包括第一传真数据发送器和/或第一传真数据接收器，第一电话机，数据接收器，包括可连接到外部计算机的连接器，用于从计算机接收指定指定第二电话机的数据以及呼叫设备，其呼叫由指定数据指定的第二电话机，以便经由通信线路将第一电话机连接到第二电话机。

6. 发明授权

US4873167A Self cleaning sheet for dissolving a photo-sensitive material containing microcapsules on both sides of substrate 失效
标题翻译：用于将含有微胶囊的感光材料溶解在基材两侧的自清洁片
公开(公告)号：US4873167A
公开(公告)日：1989-10-10
申请号：US165465
申请日：1988-03-08
申请人： Yuji Asano
发明人： Yuji Asano
IPC分类号： B41J31/05 , G03D13/00 , G03F7/00
CPC分类号： G03F7/002 , G03B2227/325
摘要： The disclosed is a cleaning sheet comprising second microcapsules, which encapsulate a solvent dissolvable of a photo-curable material, so that any radiation curable material sticking to a surface of a pressure roller member of a transfer imaging system will be efficiently cleaned away, thereby maintaining a constantly smooth surface of the pressure member which can then apply pressure onto the photo-pressure sensitive sheet uniformly, resulting in a unblemished transmittance of the original image.
摘要翻译：所公开的是包含第二微胶囊的清洁片，其包封可溶解光可固化材料的溶剂，使得粘附到转印成像系统的压力辊构件的表面的任何可辐射固化材料将被有效地清除，从而保持压力部件的光滑表面能够均匀地对压敏片施加压力，导致原始图像的无瑕疵透射。

7. 发明授权

US09534267B2 Induction hardening apparatus, induction hardening method, induction heating coil, heat treatment apparatus, and heat treatment method 有权
标题翻译：感应淬火装置，感应淬火法，感应加热线圈，热处理装置和热处理方法
公开(公告)号：US09534267B2
公开(公告)日：2017-01-03
申请号：US13360274
申请日：2012-01-27
申请人： Yoshimasa Tanaka , Yoshitaka Misaka , Yuji Asano
发明人： Yoshimasa Tanaka , Yoshitaka Misaka , Yuji Asano
IPC分类号： H05B6/10 , H05B6/22 , H05B6/36 , C21D1/10 , C21D1/42 , C21D9/40
CPC分类号： C21D9/40 , C21D1/10 , C21D1/42 , C21D2221/00 , H05B6/102 , H05B6/36 , H05B6/40 , H05B6/44 , Y02P10/253
摘要： According to an embodiment, an induction heating coil includes a heating conductor portion which is formed of a conductor member and has a zigzag shape in which a bent portion opened to one side in a first direction and a bent portion opened to the other side in the first direction are alternately continuously arranged in opposite directions along a second direction crossing the first direction.
摘要翻译：根据实施例，感应加热线圈包括由导体构件形成并具有之字形形状的加热导体部分，其中在第一方向上一侧开口的弯曲部分和在第一方向上向另一侧敞开的弯曲部分第一方向沿着与第一方向交叉的第二方向沿相反方向交替地连续布置。

8. 发明授权

US09202827B2 Driver circuit and semiconductor device 有权
标题翻译：驱动电路和半导体器件
公开(公告)号：US09202827B2
公开(公告)日：2015-12-01
申请号：US12641446
申请日：2009-12-18
申请人： Jun Koyama , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
发明人： Jun Koyama , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
摘要翻译：通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

9. 发明授权

US08936965B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08936965B2
公开(公告)日：2015-01-20
申请号：US13295469
申请日：2011-11-14
申请人： Yuki Imoto , Yuji Asano , Tetsunori Maruyama
发明人： Yuki Imoto , Yuji Asano , Tetsunori Maruyama
IPC分类号： H01L51/40 , H01L29/786 , H01L29/49 , H01L51/05 , H01L29/423 , H01L29/66 , H01L21/8234
CPC分类号： H01L29/7869 , H01L21/823456 , H01L29/42392 , H01L29/4908 , H01L29/4966 , H01L29/66742 , H01L29/66969 , H01L51/0554
摘要： A normally-off transistor having an oxide semiconductor layer in a channel formation layer is provided. The transistor comprises: a first oxide semiconductor layer functioning as a channel formation region; a source electrode layer and a drain electrode layer which overlap with the first oxide semiconductor layer; a gate insulating layer which is provided over and in contact with the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer which is provided over and in contact with the gate insulating layer and overlaps with the first oxide semiconductor layer; and a gate electrode layer provided over the second oxide semiconductor layer. A manufacturing method thereof is also disclosed.
摘要翻译：提供了在通道形成层中具有氧化物半导体层的常关晶体管。晶体管包括：用作沟道形成区域的第一氧化物半导体层; 源极电极层和与第一氧化物半导体层重叠的漏电极层; 栅极绝缘层，设置在第一氧化物半导体层上，与源极电极层和漏极电极层接触; 第二氧化物半导体层，设置在栅极绝缘层上并与栅极绝缘层接触并与第一氧化物半导体层重叠; 以及设置在所述第二氧化物半导体层上的栅电极层。还公开了其制造方法。

10. 发明授权

US07659135B2 Semiconductor device fabrication method and semiconductor device 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US07659135B2
公开(公告)日：2010-02-09
申请号：US11327483
申请日：2006-01-09
申请人： Yuji Asano , Morio Kato
发明人： Yuji Asano , Morio Kato
IPC分类号： H01L21/00
CPC分类号： H01L31/0216
摘要： A semiconductor device fabrication method in which when a semiconductor device with a built-in light receiving element is fabricated, a section for dividing the light receiving element is protected from damage caused by, for example, etching. An antireflection coating is formed not only on a light receiving area in a divided photodiode area but on a division area including a junction area between a division section outside the light receiving area for dividing a photodiode and a cathode. A polycrystalline silicon film is formed so as to cover the antireflection coating. Accordingly, the antireflection coating on the junction area between the division section outside the light receiving area and the cathode is protected against, for example, etching by the polycrystalline silicon film. As a result, the appearance of a crystal defect, a change in impurity concentration, or the like is suppressed in this area. Therefore, a high-performance high-quality semiconductor device with a built-in photodiode can be fabricated.
摘要翻译：一种半导体器件制造方法，其中当制造具有内置光接收元件的半导体器件时，用于分割光接收元件的部分被保护免受例如蚀刻引起的损坏。防反射涂层不仅形成在分光电二极管区域的光接收区域上，而且形成在包含用于分割光电二极管的光接收区域外的分割部分与阴极之间的接合区域的分割区域上。形成多晶硅膜以覆盖抗反射涂层。因此，防止在光接收区域外的分割部分与阴极之间的接合区域上的抗反射涂层被防止例如多晶硅膜的蚀刻。结果，在该区域中抑制了晶体缺陷的出现，杂质浓度的变化等。因此，可以制造具有内置光电二极管的高性能高品质半导体器件。

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