会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US08089081B2
    • 2012-01-03
    • US12404807
    • 2009-03-16
    • Ryota KitagawaAkira FujimotoKoji AsakawaTakeyuki Suzuki
    • Ryota KitagawaAkira FujimotoKoji AsakawaTakeyuki Suzuki
    • H01L33/00
    • H01L33/22
    • A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.
    • 一种半导体发光器件,包括:衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜,所述半导体多层膜包括:n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层,其中,所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面,所述光提取面形成有 具有纳米级凸部的浮雕结构,其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化,并且其中所述浮雕结构中的所述凸部中的90%以上的构造具有圆形度系数( 4&pgr×(面积)/(圆周长度)2)等于或大于0.7。
    • 6. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 半导体发光器件
    • US20100065868A1
    • 2010-03-18
    • US12404807
    • 2009-03-16
    • Ryota KitagawaAkira FujimotoKoji AsakawaTakeyuki Suzuki
    • Ryota KitagawaAkira FujimotoKoji AsakawaTakeyuki Suzuki
    • H01L33/00
    • H01L33/22
    • A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.
    • 一种半导体发光器件,包括:衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜,所述半导体多层膜包括:n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层,其中,所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面,所述光提取面形成有 具有纳米级凸部的浮雕结构,其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化,并且其中所述浮雕结构中的所述凸部中的90%以上的构造具有圆形度系数( 4&pgr×(面积)/(圆周长度)2)等于或大于0.7。
    • 8. 发明授权
    • Contact probe and semiconductor device socket including contact probe
    • 接触式探头和半导体器件插座,包括接触探头
    • US09105994B2
    • 2015-08-11
    • US13231016
    • 2011-09-13
    • Katsumi SuzukiTakeyuki Suzuki
    • Katsumi SuzukiTakeyuki Suzuki
    • G01R1/067H01R13/24H01R11/18G01R1/04
    • H01R11/18G01R1/0483G01R1/06722G01R1/06738H01R13/2421H01R13/2485
    • A contact probe having a plunger; a top contacting member which is provided at a tip end of the plunger and is brought into contact with an electrode of a semiconductor device; a bottom contacting member which is brought into contact with an electrode of a testing board; and an elastic member for urging the top contacting member and the bottom contacting member in opposite directions away from each other. The plunger is formed into a cylindrical shape and includes a through-hole which penetrates through the plunger in an axial direction thereof. The top contacting member includes a plurality of mountain-shaped sharp portions at a tip end thereof, and each of the sharp portions is asymmetrical with respect to a straight line that passes through a peak of the sharp portion and extends along an axial direction of the plunger, and is bent toward a center line of the plunger.
    • 具有柱塞的接触探针; 顶部接触构件,其设置在所述柱塞的前端并与半导体器件的电极接触; 与检测板的电极接触的底部接触部件; 以及用于相对于彼此相反的方向推压顶部接触构件和底部接触构件的弹性构件。 柱塞形成为圆筒形状,并且包括沿其轴向穿过柱塞的通孔。 顶部接触构件在其尖端处包括多个山形尖锐部分,并且每个尖锐部分相对于穿过尖锐部分的峰部的直线是不对称的,并且沿着 柱塞,并朝向柱塞的中心线弯曲。
    • 10. 发明申请
    • VEHICLE OPERATION DEVICE
    • 车辆操作装置
    • US20140090505A1
    • 2014-04-03
    • US14118273
    • 2012-02-13
    • Haruko OkuyamaTakeyuki Suzuki
    • Haruko OkuyamaTakeyuki Suzuki
    • B62D1/04
    • B62D1/046B60K35/00B60K2350/1024B60K2350/1036B60K2350/106B60K2350/928G06F3/0219G06F3/03547G06F3/038G06F3/0416G06F3/0488Y10T74/20262
    • An operation unit provided on a grip part of a steering wheel, and having an operation panel in which contact operations are possible by the fingers of an operator; an operation detection unit that detects contact operations with respect to the operation panel with a predetermined coordinate system as a reference; a display control unit that controls the display of a display device according to the contact operations detected by the operation detection unit; a correction unit that corrects a coordinate system according to a steering angle detected by a steering angle detection device; and a correction prohibition device that, based on at least one from among contact operations detected by the operation detection device, a steering angle detected by a steering angle sensor, and a speed detected by a speed sensor, prohibits correction of the coordinate system by the correction unit.
    • 设置在方向盘的把持部上的操作部,具有能够通过操作者的手指进行接触动作的操作面板; 操作检测单元,以预定的坐标系作为基准来检测与操作面板的接触操作; 显示控制单元,其根据由操作检测单元检测到的接触操作来控制显示装置的显示; 校正单元,其根据由转向角检测装置检测到的转向角校正坐标系; 以及校正禁止装置,其基于由所述操作检测装置检测到的接触操作中的至少一个,由转向角传感器检测到的转向角和由速度传感器检测的速度,禁止通过所述坐标系的校正 校正单位。