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1. 发明授权

US08609521B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08609521B2
公开(公告)日：2013-12-17
申请号：US13583564
申请日：2011-11-07
申请人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
发明人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/268 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity region is performed. The annealing includes the step of applying first laser light having a first wavelength to the surface of the silicon carbide substrate, and the step of applying second laser light having a second wavelength to the surface of the silicon carbide substrate. The silicon carbide substrate has first and second extinction coefficients at the first and second wavelengths, respectively. A ratio of the first extinction coefficient to the first wavelength is higher than 5×105/m. A ratio of the second extinction coefficient to the second wavelength is lower than 5×105/m. Consequently, damage to the surface of the silicon carbide substrate during laser annealing can be reduced.
摘要翻译：制备具有表面的碳化硅衬底。通过从表面注入离子到碳化硅衬底中形成杂质区。执行用于激活杂质区域的退火。退火包括将具有第一波长的第一激光施加到碳化硅衬底的表面的步骤，以及将具有第二波长的第二激光施加到碳化硅衬底的表面的步骤。碳化硅衬底分别在第一和第二波长处具有第一和第二消光系数。第一消光系数与第一波长的比率高于5×10 5 / m。第二消光系数与第二波长的比率低于5×10 5 / m。因此，可以减少在激光退火期间对碳化硅衬底的表面的损坏。

2. 发明申请

US20130040445A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130040445A1
公开(公告)日：2013-02-14
申请号：US13583564
申请日：2011-11-07
申请人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
发明人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/268 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity region is performed. The annealing includes the step of applying first laser light having a first wavelength to the surface of the silicon carbide substrate, and the step of applying second laser light having a second wavelength to the surface of the silicon carbide substrate. The silicon carbide substrate has first and second extinction coefficients at the first and second wavelengths, respectively. A ratio of the first extinction coefficient to the first wavelength is higher than 5×105/m. A ratio of the second extinction coefficient to the second wavelength is lower than 5×105/m. Consequently, damage to the surface of the silicon carbide substrate during laser annealing can be reduced.
摘要翻译：制备具有表面的碳化硅衬底。通过从表面注入离子到碳化硅衬底中形成杂质区。执行用于激活杂质区域的退火。退火包括将具有第一波长的第一激光施加到碳化硅衬底的表面的步骤，以及将具有第二波长的第二激光施加到碳化硅衬底的表面的步骤。碳化硅衬底分别在第一和第二波长处具有第一和第二消光系数。第一消光系数与第一波长的比率高于5×10 5 / m。第二消光系数与第二波长的比率低于5×10 5 / m。因此，可以减少在激光退火期间对碳化硅衬底的表面的损坏。

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