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1. 发明授权

US07372655B2 Information-processing apparatus, information-processing method, programs and recording mediums 有权
标题翻译：信息处理装置，信息处理方法，程序和记录介质
公开(公告)号：US07372655B2
公开(公告)日：2008-05-13
申请号：US11327704
申请日：2006-01-06
申请人： Ryoki Honjo , Tadashi Ozue , Takeshi Ichimura , Katsuya Arai , Katsuaki Ikema
发明人： Ryoki Honjo , Tadashi Ozue , Takeshi Ichimura , Katsuya Arai , Katsuaki Ikema
IPC分类号： G11B17/00
CPC分类号： G11B27/11 , G11B15/005 , G11B15/07 , G11B15/087 , G11B27/105 , G11B27/107 , G11B2220/2545 , G11B2220/655 , G11B2220/657 , G11B2220/90
摘要： Attributes of data recorded on a magnetic tape are stored in an attribute information table saved in an MIC (Memory in Cassette) of a tape cassette accommodated in a tape streamer drive connected to a host computer. The attributes are recorded for every identifier used for identifying a recording unit of the data. For each identifier, the attributes include the name of a file, a title, a file creation date/time, a file updating date/time, the amount of data contained in the file, the type of the data and a compression rate of the data. The attributes include not only those supplied by the host computer but also attributes generated after a data recording operation as information on the recording location of data. The attributes generated after the data recording operation include a group number and an offset from the beginning of the group identified by the group number. For example, the present invention can be applied to the tape streamer drive.
摘要翻译：记录在磁带上的数据的属性被存储在存储在连接到主计算机的磁带机驱动器中的盒式磁带的MIC（盒式磁带存储器）中的属性信息表中。记录用于识别数据的记录单元的每个标识符的属性。对于每个标识符，属性包括文件的名称，标题，文件创建日期/时间，文件更新日期/时间，文件中包含的数据量，数据类型和压缩率数据。这些属性不仅包括由主计算机提供的，而且包括在数据记录操作之后产生的属性作为关于数据的记录位置的信息。在数据记录操作之后产生的属性包括组号和从由组号识别的组的开头的偏移量。例如，本发明可以应用于磁带机驱动器。

2. 发明申请

US20060176602A1 Information-processing apparatus, information-processing method, programs and recording mediums 有权
标题翻译：信息处理装置，信息处理方法，程序和记录介质
公开(公告)号：US20060176602A1
公开(公告)日：2006-08-10
申请号：US11327704
申请日：2006-01-06
申请人： Ryoki Honjo , Tadashi Ozue , Takeshi Ichimura , Katsuya Arai , Katsuaki Ikema
发明人： Ryoki Honjo , Tadashi Ozue , Takeshi Ichimura , Katsuya Arai , Katsuaki Ikema
IPC分类号： G11B19/02
CPC分类号： G11B27/11 , G11B15/005 , G11B15/07 , G11B15/087 , G11B27/105 , G11B27/107 , G11B2220/2545 , G11B2220/655 , G11B2220/657 , G11B2220/90
摘要： Attributes of data recorded on a magnetic tape are stored in an attribute information table saved in an MIC (Memory in Cassette) of a tape cassette accommodated in a tape streamer drive connected to a host computer. The attributes are recorded for every identifier used for identifying a recording unit of the data. For each identifier, the attributes include the name of a file, a title, a file creation date/time, a file updating date/time, the amount of data contained in the file, the type of the data and a compression rate of the data. The attributes include not only those supplied by the host computer but also attributes generated after a data recording operation as information on the recording location of data. The attributes generated after the data recording operation include a group number and an offset from the beginning of the group identified by the group number. For example, the present invention can be applied to the tape streamer drive.
摘要翻译：记录在磁带上的数据的属性被存储在存储在连接到主计算机的磁带机驱动器中的盒式磁带的MIC（盒式磁带存储器）中的属性信息表中。记录用于识别数据的记录单元的每个标识符的属性。对于每个标识符，属性包括文件的名称，标题，文件创建日期/时间，文件更新日期/时间，文件中包含的数据量，数据类型和压缩率数据。这些属性不仅包括由主计算机提供的，而且包括在数据记录操作之后产生的属性作为关于数据的记录位置的信息。在数据记录操作之后产生的属性包括组号和从由组号识别的组的开头的偏移量。例如，本发明可以应用于磁带机驱动器。

3. 发明授权

US07352548B2 Composite integrated semiconductor device 有权
标题翻译：复合集成半导体器件
公开(公告)号：US07352548B2
公开(公告)日：2008-04-01
申请号：US11723356
申请日：2007-03-19
申请人： Shin Kiuchi , Kazuhiko Yoshida , Takeshi Ichimura , Naoki Yaezawa , Shoichi Furuhata
发明人： Shin Kiuchi , Kazuhiko Yoshida , Takeshi Ichimura , Naoki Yaezawa , Shoichi Furuhata
IPC分类号： H02H9/00
CPC分类号： H03F1/52 , H01L23/552 , H01L27/0255 , H01L2924/0002 , H03F1/26 , H03F3/45475 , H03F2200/372 , H03F2200/444 , H03F2203/45136 , H01L2924/00
摘要： A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.
摘要翻译：复合集成半导体器件。在一个实施例中，输入浪涌/噪声吸收电路从输入信号吸收浪涌，衰减/电平移位电路衰减或电平移位输入信号，电信号转换电路将输入信号转换为输出信号。输入浪涌/噪声吸收电路，衰减或电平移位电路和电信号转换电路一起形成一个单元，并且多个这些单元并联在一个半导体衬底中以形成复合集成半导体器件，从而得到减少安装在印刷电路板上的分立元件的数量。

4. 发明申请

US20060022265A1 Semiconductor device having a lateral MOSFET and combined IC using the same 有权
标题翻译：具有横向MOSFET的半导体器件和使用其的组合IC
公开(公告)号：US20060022265A1
公开(公告)日：2006-02-02
申请号：US11235415
申请日：2005-09-26
申请人： Kazuhiko Yoshida , Takeshi Ichimura , Tatsuhiko Fujihira , Naoki Kumagai
发明人： Kazuhiko Yoshida , Takeshi Ichimura , Tatsuhiko Fujihira , Naoki Kumagai
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L27/0251 , H01L29/7817 , H01L29/7821 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.
摘要翻译：半导体器件在集成智能开关器件，双积分型信号输入和转换IC以及组合电源IC中使用的横向MOSFET的窄芯片区域内实现了高静电放电耐受能力和高耐冲击能力。半导体器件包括其中基极电连接到发射极和集电极的垂直双极晶体管，以及包括连接到表面电极的漏电极的横向MOSFET。当施加高静电放电电压或高浪涌电压时，垂直双极晶体管吸收静电放电或浪涌能量，并将静电放电电压或浪涌电压限制为低于横向MOSFET的击穿电压。

5. 发明授权

US09293391B2 Semiconductor module cooler and semiconductor module 有权
标题翻译：半导体模块冷却器和半导体模块
公开(公告)号：US09293391B2
公开(公告)日：2016-03-22
申请号：US14351033
申请日：2012-09-05
申请人： Hiromichi Gohara , Akira Morozumi , Takeshi Ichimura
发明人： Hiromichi Gohara , Akira Morozumi , Takeshi Ichimura
IPC分类号： H01L23/473 , H01L23/373 , H05K7/20 , F28F3/12 , F28F9/02 , F28F3/02 , H02M7/00
CPC分类号： H01L23/473 , F28F3/02 , F28F3/12 , F28F9/026 , H01L23/3735 , H01L2924/0002 , H02M7/003 , H05K7/20927 , H01L2924/00
摘要： A semiconductor module cooler for supplying a refrigerant from exterior into a water jacket and cooling a semiconductor device disposed on an outer surface of the cooler, includes a heat sink thermally connected to the semiconductor device; a first flow path extending from a refrigerant inlet and arranged with a guide portion having an inclined surface for guiding the refrigerant toward one side surface of the heat sink; a second flow path extending toward a refrigerant outlet and formed with a sidewall parallel to the other side surface of the heat sink; a flow velocity adjustment plate disposed in the second flow path and formed parallel to the other side surface of the heat sink at a distance therefrom; and a third flow path formed at a position communicating the first flow path and the second flow path. The heat sink is disposed in the third flow path.
摘要翻译：一种半导体模块冷却器，用于将制冷剂从外部供应到水套中并冷却设置在所述冷却器的外表面上的半导体装置，所述半导体模块冷却器包括热连接到所述半导体器件的散热器; 第一流路，其从制冷剂入口延伸并配置有具有倾斜面的引导部，用于将制冷剂导向散热器的一个侧面; 向制冷剂出口延伸并形成有与散热片的另一侧面平行的侧壁的第二流路; 流量调节板，设置在所述第二流路中并与所述散热器的另一侧表面平行; 以及形成在连通第一流路和第二流路的位置的第三流路。散热器设置在第三流路中。

6. 发明授权

US09237676B2 Semiconductor module cooler and semiconductor module 有权
标题翻译：半导体模块冷却器和半导体模块
公开(公告)号：US09237676B2
公开(公告)日：2016-01-12
申请号：US14110856
申请日：2012-04-16
申请人： Hiromichi Gohara , Akira Morozumi , Takeshi Ichimura
发明人： Hiromichi Gohara , Akira Morozumi , Takeshi Ichimura
IPC分类号： H05K7/20 , H01L23/373 , H01L23/473
CPC分类号： H05K7/20254 , H01L23/3735 , H01L23/473 , H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H05K7/20927 , H01L2924/00
摘要： A semiconductor module cooler supplies a coolant to a water jacket from outside and cools a semiconductor device arranged on an outer surface of the cooler. The semiconductor module cooler has a heat sink thermally connected to the semiconductor device; a first flow channel arranged inside the water jacket with a guide section extending from a coolant inlet and having an inclined surface for guiding the coolant toward one side surface of the heat sink; a second flow channel arranged inside the water jacket in parallel to the first flow channel and extending to a coolant outlet; and a third flow channel formed inside the water jacket at a position connecting the first flow channel and the second flow channel. The coolant inlet and the coolant outlet are formed on a same wall surface of the water jacket, and the heat sink is arranged in the third flow channel.
摘要翻译：半导体模块冷却器从外部将冷却剂供给水套，并冷却布置在冷却器的外表面上的半导体器件。半导体模块冷却器具有热连接到半导体器件的散热器; 第一流动通道，其布置在水套内部，具有从冷却剂入口延伸的引导部分，并具有用于将冷却剂朝向散热器的一个侧表面引导的倾斜表面; 第二流动通道，其布置在所述水套内并平行于所述第一流动通道并延伸到冷却剂出口; 以及形成在所述水套内的连接所述第一流路和所述第二流路的位置的第三流路。冷却剂入口和冷却剂出口形成在水套的同一壁表面上，并且散热器布置在第三流动通道中。

7. 发明授权

US07948725B2 Composite integrated semiconductor device 有权
标题翻译：复合集成半导体器件
公开(公告)号：US07948725B2
公开(公告)日：2011-05-24
申请号：US12071604
申请日：2008-02-22
申请人： Shin Kiuchi , Kazuhiko Yoshida , Takeshi Ichimura , Naoki Yaezawa , Shoichi Furuhata
发明人： Shin Kiuchi , Kazuhiko Yoshida , Takeshi Ichimura , Naoki Yaezawa , Shoichi Furuhata
IPC分类号： H02H9/00
CPC分类号： H03F3/45475 , H01L23/552 , H01L27/0255 , H01L2924/0002 , H03F1/26 , H03F1/52 , H03F2200/372 , H03F2200/444 , H03F2203/45136 , H01L2924/00
摘要： A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating circuit attenuates the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.
摘要翻译：复合集成半导体器件。在一个实施例中，输入浪涌/噪声吸收电路从输入信号吸收浪涌，衰减电路衰减输入信号，电信号转换电路将输入信号转换成输出信号。输入浪涌/噪声吸收电路，衰减电路和电信号转换电路一起形成一个单元，并且多个这些单元并联在一个半导体衬底中以形成复合集成半导体器件，从而减少安装在印刷电路板上的分立组件的数量。

8. 发明授权

US07405913B2 Semiconductor device having transistor with high electro-static discharge capability and high noise capability 有权
标题翻译：具有具有高静电放电能力和高噪声能力的晶体管的半导体器件
公开(公告)号：US07405913B2
公开(公告)日：2008-07-29
申请号：US10800013
申请日：2004-03-15
申请人： Hiroshi Tobisaka , Tatsuhiko Fujihira , Shin Kiuchi , Yoshiaki Minoya , Takeshi Ichimura , Naoki Yaezawa , Ryu Saitou , Shouichi Furuhata , Yuichi Harada
发明人： Hiroshi Tobisaka , Tatsuhiko Fujihira , Shin Kiuchi , Yoshiaki Minoya , Takeshi Ichimura , Naoki Yaezawa , Ryu Saitou , Shouichi Furuhata , Yuichi Harada
IPC分类号： H02H9/00 , H02H3/22
CPC分类号： H01L27/0259 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in includes a transistor and a surge absorption element such as Zener diode, that are formed on the same substrate and connected in parallel. The surge absorption element has a resistance during breakdown operation that is smaller than the resistance of the surge absorption element during breakdown operation of the transistor. In addition, the secondary breakdown current of the surge absorption element is larger than the secondary breakdown current of the transistor. Upon application of a high ESD voltage and high surge voltage, the energy of the ESD and surge is absorbed by operation of the surge absorption element and is limited to a voltage equal to or less than the breakdown voltage of the transistor, which would otherwise be destroyed.
摘要翻译：一种半导体器件包括晶体管和诸如齐纳二极管的浪涌吸收元件，其形成在同一衬底上并联连接。浪涌吸收元件在击穿操作期间具有小于在晶体管的击穿操作期间浪涌吸收元件的电阻的电阻。此外，浪涌吸收元件的次级击穿电流大于晶体管的次级击穿电流。在施加高ESD电压和高浪涌电压时，ESD和浪涌的能量被浪涌吸收元件的操作吸收并且被限制在等于或小于晶体管的击穿电压的电压，否则将是被毁了

9. 发明授权

US07247923B2 Semiconductor device having a lateral MOSFET and combined IC using the same 有权
标题翻译：具有横向MOSFET的半导体器件和使用其的组合IC
公开(公告)号：US07247923B2
公开(公告)日：2007-07-24
申请号：US11235415
申请日：2005-09-26
申请人： Kazuhiko Yoshida , Takeshi Ichimura , Tatsuhiko Fujihira , Naoki Kumagai
发明人： Kazuhiko Yoshida , Takeshi Ichimura , Tatsuhiko Fujihira , Naoki Kumagai
IPC分类号： H01L29/00
CPC分类号： H01L29/7816 , H01L27/0251 , H01L29/7817 , H01L29/7821 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.
摘要翻译：半导体器件在集成智能开关器件，双积分型信号输入和转换IC以及组合电源IC中使用的横向MOSFET的窄芯片区域内实现了高静电放电耐受能力和高耐冲击能力。半导体器件包括其中基极电连接到发射极和集电极的垂直双极晶体管，以及包括连接到表面电极的漏电极的横向MOSFET。当施加高静电放电电压或高浪涌电压时，垂直双极晶体管吸收静电放电或浪涌能量，并将静电放电电压或浪涌电压限制为低于横向MOSFET的击穿电压。

10. 发明授权

US08902589B2 Semiconductor module and cooler 有权
标题翻译：半导体模块和冷却器
公开(公告)号：US08902589B2
公开(公告)日：2014-12-02
申请号：US13634813
申请日：2011-04-21
申请人： Hiromichi Gohara , Takeshi Ichimura , Akira Morozumi
发明人： Hiromichi Gohara , Takeshi Ichimura , Akira Morozumi
IPC分类号： H05K7/20 , F28F3/12 , H01L23/373 , H01L23/473 , H01L25/07 , G06F1/20 , H01L23/00 , H01L25/18
CPC分类号： H01L23/3735 , H01L23/473 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/85447 , H01L2224/85455 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/1305 , H01L2924/13055 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor module and a cooler capable of cooling a semiconductor element efficiently. The semiconductor module supplies a refrigerant to a water jacket configuring the cooler, to cool a circuit element part disposed on an outer surface of a fin base. This semiconductor module has: a fin connected thermally to the circuit element part; a refrigerant introducing passage in the water jacket, which has a guide part that has one surface and another surface inclined to guide the refrigerant toward one side surface of the fin; a refrigerant discharge passage disposed in the water jacket to be parallel to the refrigerant introducing passage, which has a side wall parallel to another side surface of the fin; and a cooling passage formed in a position for communicating the refrigerant introducing passage and the refrigerant discharge passage with each other in the water jacket. The fin is disposed in the cooling passage.
摘要翻译：能够有效地冷却半导体元件的半导体模块和冷却器。半导体模块将制冷剂供给到构成冷却器的水套，以冷却设置在翅片基座的外表面上的电路元件部分。该半导体模块具有：与电路元件部分热连接的散热片; 所述水套中的制冷剂导入通路具有导向部，该引导部具有一个表面，另一个表面倾斜以朝向所述翅片的一个侧表面引导制冷剂; 制冷剂排出通道，设置在所述水套中，以平行于所述制冷剂引入通道，所述制冷剂排出通道具有平行于所述翅片的另一侧表面的侧壁; 以及形成在水套中使制冷剂导入通路和制冷剂排出通路彼此连通的位置的冷却通路。翅片设置在冷却通道中。

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