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1. 发明授权

US4578775A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4578775A
公开(公告)日：1986-03-25
申请号：US505379
申请日：1983-06-16
申请人： Ryo Suzuki , Yutaka Sugita , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Hiroshi Umezaki
发明人： Ryo Suzuki , Yutaka Sugita , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Hiroshi Umezaki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device is disclosed which is equipped with a minor loop of a magnetic bubble propagation track formed by ion implantation and a major loop or major line of a magnetic bubble propagation track consisting of a soft magnetic film and in which the thickness of an insulating film at at least the junction between the minor loop and the major loop or major line is less than the thickness of insulating film at the major line or major loop.
摘要翻译：公开了一种磁性气泡存储装置，其装备有通过离子注入形成的磁性气泡传播轨迹的小环和由软磁膜组成的磁性气泡传播轨迹的主要环或主线，其中，至少在小环和主环或主线之间的连接处的绝缘膜小于主线或主环上的绝缘膜的厚度。

2. 发明授权

US4589095A Magnetic bubble stretcher 失效
标题翻译：磁性气泡担架
公开(公告)号：US4589095A
公开(公告)日：1986-05-13
申请号：US636741
申请日：1984-08-01
申请人： Ryo Suzuki , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Yutaka Sugita
发明人： Ryo Suzuki , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0866
摘要： A magnetic bubble stretcher comprises a bubble fanning part for propagating a magnetic bubble while gradually stretching the bubble and a bubble propagation part for propagating the stretcher bubble. The bubble fanning and propagation parts include a bubble propagation patterns as fundament elements for stretching or propagating the bubble the bubble propagation patterns in the bubble fanning part are different in shape and/or dimension from the bubble propagation patterns in the bubble propagation part.
摘要翻译：磁性气泡拉伸器包括用于在逐渐拉伸气泡的同时传播磁性气泡的气泡扇形部分和用于传播担架气泡的气泡传播部分。泡沫扇形和传播部分包括气泡传播模式作为用于拉伸或传播气泡的基础元件，气泡扇形部分中的气泡传播图案的形状和/或尺寸与气泡传播部分中的气泡传播模式不同。

3. 发明授权

US4589094A Magnetic bubble device 失效
标题翻译：磁性气泡装置
公开(公告)号：US4589094A
公开(公告)日：1986-05-13
申请号：US633929
申请日：1984-07-24
申请人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Yutaka Sugita
发明人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0816
摘要： A magnetic bubble device includes ion-implanted bubble propagation tracks of meandering cord-like configuration to assure improved bubble propagation characteristic. Amplitude of a region in which inplane magnetization layer is absent or alternatively thickness thereof is smaller than that of other region, as measured in the direction perpendicular to the bubble propagating direction, is not greater than 7/8 of a pitch of the meandering pattern in the bubble propagating direction. The amplitude is more preferably selected so as to meet the condition that 1/4.ltoreq.W/P.ltoreq.3/4 for assuring much stabilized bubble propagating operation.
摘要翻译：磁性气泡装置包括离子注入的气泡传播轨道，其具有曲折的线状结构，以确保改进的气泡传播特性。在垂直于气泡传播方向的方向上测量的面内磁化层不存在或者其厚度小于其它区域的区域的幅度不大于曲面图案的间距的7/8 气泡传播方向。更优选选择振幅以满足1/4

4. 发明授权

US4607349A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4607349A
公开(公告)日：1986-08-19
申请号：US514668
申请日：1983-07-18
申请人： Ryo Suzuki , Masatoshi Takeshita , Teruaki Takeuchi , Naoki Kodama , Yutaka Sugita
发明人： Ryo Suzuki , Masatoshi Takeshita , Teruaki Takeuchi , Naoki Kodama , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0816
摘要： A highly density magnetic bubble memory device has bubble propagation paths having different pattern periods. The distance between a propagation path having shorter period and a magnetic film for holding magnetic bubbles is made smaller than that between propagation path having longer period and the magnetic film. An insulating layer formed between the propagation path and the magnetic film through another insulating layer has a declining slope having an angle of 60.degree. or less, thereby ensuring steady propagation of the magnetic bubbles along the propagation path.
摘要翻译：高密度磁气泡存储装置具有不同图案周期的气泡传播路径。使具有较短周期的传播路径和用于保持磁性气泡的磁性膜之间的距离小于具有较长周期的传播路径与磁性膜之间的距离。通过另一绝缘层在传播路径和磁性膜之间形成的绝缘层具有60度以下角度的下降斜率，从而确保磁性气泡沿传播路径的稳定传播。

5. 发明授权

US4601013A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4601013A
公开(公告)日：1986-07-15
申请号：US706182
申请日：1985-02-27
申请人： Ryo Suzuki , Yutaka Sugita , Naoki Kodama , Masatoshi Takeshita , Teruaki Takeuchi
发明人： Ryo Suzuki , Yutaka Sugita , Naoki Kodama , Masatoshi Takeshita , Teruaki Takeuchi
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0891 , G11C19/0883
摘要： Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implantation pattern and a second bubble propagation path made of permalloy elments in combination. The majority of the area for forming the second propagation path is processed by ion implantation in lower density and to smaller depth than those of ion implantation for forming the first propagation path on the surface of a bubble supporting layer.
摘要翻译：公开了具有以离子注入图案形成的第一气泡传播路径和由坡莫合金组合的第二气泡传播路径的磁性气泡存储装置。用于形成第二传播路径的大部分区域通过离子注入以比用于在气泡支撑层的表面上形成第一传播路径的离子注入更低的密度和更小的深度进行处理。

6. 发明授权

US4584668A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4584668A
公开(公告)日：1986-04-22
申请号：US603450
申请日：1984-04-24
申请人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
发明人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
IPC分类号： G11C19/08
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.
摘要翻译：磁性气泡存储器件具有两种类型的气泡传播轨迹。通过将离子注入到磁性层中形成一种类型的气泡传播轨迹。另一种由软磁性材料，例如坡莫合金形成。至少软磁性材料所在的区域的厚度比其他区域的厚度小。

7. 发明授权

US4547865A Magnetic bubble replicator 失效
标题翻译：磁性气泡复制器
公开(公告)号：US4547865A
公开(公告)日：1985-10-15
申请号：US538787
申请日：1983-10-04
申请人： Naoki Kodama , Masatoshi Takeshita , Ryo Suzuki , Teruaki Takeuchi , Yutaka Sugita
发明人： Naoki Kodama , Masatoshi Takeshita , Ryo Suzuki , Teruaki Takeuchi , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： In a magnetic bubble replicator having a soft magnetic material element for propagating a magnetic bubble along an edge thereof in response to a change in a direction of an external magnetic field and a hairpin-shaped conductor superimposed on the soft magnetic material element, an angle between a slit of the conductor and a propagation path of the magnetic bubble of the soft magnetic material element is set to no less than 90 degrees, preferably 5-85 degrees, and more preferably to 45-60 degrees.
摘要翻译：在具有用于响应于外部磁场的方向的变化和叠加在软磁性材料元件上的发夹形导体的沿其边缘传播磁性气泡的软磁性材料元件的磁性气泡复制器中，将导体的狭缝和软磁性体的磁性气泡的传播路径设定为90度以上，优选为5〜85度，更优选为45〜60度。

8. 发明授权

US4546452A Magnetic bubble device 失效
标题翻译：磁性气泡装置
公开(公告)号：US4546452A
公开(公告)日：1985-10-08
申请号：US544138
申请日：1983-10-21
申请人： Ryo Suzuki , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Yutaka Sugita
发明人： Ryo Suzuki , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0891
摘要： A magnetic bubble device in which a first propagation path having a cyclic shape formed by selectively implanting ions into a magnetic film capable of holding magnetic bubbles and a second propagation path including soft magnetic material elements are arranged on the same chip. A soft magnetic material element having a length in the direction perpendicular to the direction of bubble propagation in the first propagation path which is not less than 2.5 times the period of the first propagation path is included in the junction between the first and second propagation paths.
摘要翻译：一种磁性气体装置，其中具有通过将离子选择性地注入到能够保持磁性气泡的磁性膜中形成的循环形状的第一传播路径和包括软磁性材料元件的第二传播路径布置在同一芯片上。在第一和第二传播路径之间的连接处包括在第一传播路径中与第一传播路径中的气泡传播方向垂直的方向上的长度不小于第二传播路径周期的2.5倍的软磁性材料元件。

9. 发明授权

US4525808A Hybrid magnetic bubble memory device 失效
标题翻译：混合磁性气泡记忆装置
公开(公告)号：US4525808A
公开(公告)日：1985-06-25
申请号：US592954
申请日：1984-03-23
申请人： Naoki Kodama , Ryo Suzuki , Teruaki Takeuchi , Masatoshi Takeshita , Yutaka Sugita
发明人： Naoki Kodama , Ryo Suzuki , Teruaki Takeuchi , Masatoshi Takeshita , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0891
摘要： A hybrid magnetic bubble memory device includes a first magnetic bubble propagation tracks formed of a portion of the boundary between first and second regions of a magnetic medium film having uniaxial anisotropy and adapted to be applied with a magnetic field in a direction perpendicular to the magnetic medium film to generate magnetic bubbles therein, and a second magnetic bubble propagation tracks formed of a soft magnetic material film on the magnetic medium film and connected with the first magnetic bubble propagation tracks. The first region is implanted with ions under ion-implant conditions different from those for the second region, and thus the above boundary is produced. The boundary between the first region and the second region is bent at junctions for transferring a magnetic bubble from the second magnetic bubble propagation tracks to the first magnetic bubble propagation tracks, to divide the boundary into a boundary portion for propagating a magnetic bubble and another boundary portion having no connection with magnetic bubble propagation, and an angle between the boundary portions at the bend in the boundary is in a range from 45 to 180 degrees.
摘要翻译：混合磁气泡存储装置包括由具有单轴各向异性的磁介质膜的第一和第二区域之间的边界的一部分形成的第一磁性气泡传播轨道，并且适于在垂直于磁介质的方向上施加磁场膜以在其中产生磁性气泡，以及由磁性介质膜上的软磁性材料膜形成的第二磁性气泡传播轨道，并与第一磁性气泡传播轨道连接。第一区域在与第二区域不同的离子注入条件下注入离子，因此产生上述边界。第一区域和第二区域之间的边界在接合部处弯曲，以将磁性气泡从第二磁性气泡传播轨迹转移到第一磁性气泡传播轨迹，以将边界划分成用于传播磁性气泡和另一边界的边界部分与气泡传播无关的部分，边界弯曲处的边界部分之间的角度为45〜180度。

10. 发明授权

US4510231A Method for manufacturing a magnetic bubble memory 失效
标题翻译：磁性气泡存储器的制造方法
公开(公告)号：US4510231A
公开(公告)日：1985-04-09
申请号：US462229
申请日：1983-01-31
申请人： Masatoshi Takeshita , Naoki Kodama , Ryo Suzuki , Teruaki Takeuchi , Yutaka Sugita
发明人： Masatoshi Takeshita , Naoki Kodama , Ryo Suzuki , Teruaki Takeuchi , Yutaka Sugita
IPC分类号： G11C11/14 , H01F10/00 , H01F41/34 , B05D5/00 , H01F10/06
CPC分类号： H01F41/34
摘要： A conductor pattern and an ion implanting mask are simultaneously formed by photoetching a conductor film through a single photoresist pattern. An area on which a conductor pattern is to be formed is covered with a photoresist, and ions are implanted to a magnetic film using the conductor film portion not convered with the photoresist, to form a magnetic bubble propagation track. The ion implantation mask and the conductor pattern are formed simultaneously through one mask. Accordingly, reduction of accuracy due to an error in mask alignment is prevented and the manufacturing is facilitated.
摘要翻译：通过单一光致抗蚀剂图案对导体膜进行光刻，同时形成导体图案和离子注入掩模。要形成导体图案的区域被光致抗蚀剂覆盖，并且使用未被光致抗蚀剂覆盖的导体膜部分将离子注入到磁性膜中，以形成磁性气泡传播轨道。离子注入掩模和导体图案通过一个掩模同时形成。因此，防止由于掩模对准的误差而导致的精度降低，并且便于制造。

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