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1. 发明授权

US09502281B2 AVD hardmask for damascene patterning 有权
标题翻译：用于镶嵌图案的AVD硬掩模
公开(公告)号：US09502281B2
公开(公告)日：2016-11-22
申请号：US13995133
申请日：2011-12-29
申请人： Ruth A. Brain , Kevin J. Fischer , Michael A. Childs
发明人： Ruth A. Brain , Kevin J. Fischer , Michael A. Childs
IPC分类号： H01L21/768 , H01L23/498 , H01L21/311
CPC分类号： H01L23/5329 , H01L21/311 , H01L21/31144 , H01L21/76802 , H01L21/76807 , H01L23/49827 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A method including forming a dielectric layer on a contact point of an integrated circuit structure; forming a hardmask including a dielectric material on a surface of the dielectric layer; and forming at least one via in the dielectric layer to the contact point using the hardmask as a pattern. An apparatus including a circuit substrate including at least one active layer including a contact point; a dielectric layer on the at least one active layer; a hardmask including a dielectric material having at least one opening therein for an interconnect material; and an interconnect material in the at least one opening of the hardmask and through the dielectric layer to the contact point.
摘要翻译：一种包括在集成电路结构的接触点上形成介电层的方法; 在所述电介质层的表面上形成包括电介质材料的硬掩模; 以及使用所述硬掩模作为图案在所述电介质层中形成至少一个通孔到所述接触点。一种包括电路基板的装置，包括至少一个包括接触点的活性层; 所述至少一个有源层上的介电层; 包括其中具有用于互连材料的至少一个开口的电介质材料的硬掩模; 以及在硬掩模的至少一个开口中并通过介电层到接触点的互连材料。

2. 发明申请

US20130320564A1 AVD HARDMASK FOR DAMASCENE PATTERNING 有权
公开(公告)号：US20130320564A1
公开(公告)日：2013-12-05
申请号：US13995133
申请日：2011-12-29
申请人： Ruth A. Brain , Kevin J. Fischer , Michael A. Childs
发明人： Ruth A. Brain , Kevin J. Fischer , Michael A. Childs
IPC分类号： H01L21/768 , H01L23/498
CPC分类号： H01L23/5329 , H01L21/311 , H01L21/31144 , H01L21/76802 , H01L21/76807 , H01L23/49827 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A method including forming a dielectric layer on a contact point of an integrated circuit structure; forming a hardmask including a dielectric material on a surface of the dielectric layer; and forming at least one via in the dielectric layer to the contact point using the hardmask as a pattern. An apparatus including a circuit substrate including at least one active layer including a contact point; a dielectric layer on the at least one active layer; a hardmask including a dielectric material having a least one opening therein for an interconnect material; and an interconnect material in the at least one opening of the hardmask and through the dielectric layer to the contact point.
摘要翻译：一种包括在集成电路结构的接触点上形成介电层的方法; 在所述电介质层的表面上形成包括电介质材料的硬掩模; 以及使用所述硬掩模作为图案在所述电介质层中形成至少一个通孔到所述接触点。一种包括电路基板的装置，包括至少一个包括接触点的活性层; 所述至少一个有源层上的介电层; 包括其中具有用于互连材料的至少一个开口的电介质材料的硬掩模; 以及在硬掩模的至少一个开口中并通过介电层到接触点的互连材料。

3. 发明申请

US20130270675A1 ON-CHIP CAPACITORS AND METHODS OF ASSEMBLING SAME 有权
标题翻译：片上电容器及其组装方法
公开(公告)号：US20130270675A1
公开(公告)日：2013-10-17
申请号：US13995525
申请日：2011-10-01
申请人： Michael A. Childs , Kevin J. Fischer , Sanjay S. Natarajan
发明人： Michael A. Childs , Kevin J. Fischer , Sanjay S. Natarajan
IPC分类号： H01L23/522
CPC分类号： H01L23/5226 , H01L23/5223 , H01L28/60 , H01L2224/0401 , H01L2224/05016 , H01L2224/05568 , H01L2224/13007 , H01L2224/13099 , H01L2924/00014 , H01L2224/05552
摘要： An on-chip capacitor a semiconductive substrate is fabricated in a passivation layer that is above the back-end metallization. At least three electrodes are configured in the on-chip capacitor and power and ground vias couple at least two of the at least three electrodes. The first via has a first-coupled configuration to at least one of the first- second- and third electrodes and the second via has a second-coupled configuration to at least one of the first- second- and third electrodes.
摘要翻译：半导体衬底的片上电容器制造在位于后端金属化之上的钝化层中。至少三个电极配置在片上电容器中，并且电源和接地通孔耦合至少三个电极中的至少两个电极。第一通孔具有到第一和第三电极中的至少一个的第一耦合配置，而第二通孔具有到第一和第三电极中的至少一个的第二耦合配置。

4. 发明授权

US09627312B2 On-chip capacitors and methods of assembling same 有权
公开(公告)号：US09627312B2
公开(公告)日：2017-04-18
申请号：US13995525
申请日：2011-10-01
申请人： Michael A. Childs , Kevin J. Fischer , Sanjay S. Natarajan
发明人： Michael A. Childs , Kevin J. Fischer , Sanjay S. Natarajan
IPC分类号： H01L23/522 , H01L49/02
CPC分类号： H01L23/5226 , H01L23/5223 , H01L28/60 , H01L2224/0401 , H01L2224/05016 , H01L2224/05568 , H01L2224/13007 , H01L2224/13099 , H01L2924/00014 , H01L2224/05552
摘要： An on-chip capacitor a semiconductive substrate is fabricated in a passivation layer that is above the back-end metallization. At least three electrodes are configured in the on-chip capacitor and power and ground vias couple at least two of the at least three electrodes. The first via has a first-coupled configuration to at least one of the first- second- and third electrodes and the second via has a second-coupled configuration to at least one of the first- second- and third electrodes.

5. 发明授权

US5765385A Self-cooling beverage container 失效
标题翻译：自冷饮料容器
公开(公告)号：US5765385A
公开(公告)日：1998-06-16
申请号：US654556
申请日：1996-05-29
申请人： Michael A. Childs
发明人： Michael A. Childs
IPC分类号： F25D3/10 , F25D3/08
CPC分类号： F25D3/107 , F25D2331/805 , F25D2500/02
摘要： A self-cooling beverage container system. The system includes a can, and an external chamber coupled to the bottom of the can for containing compressed gas therein. Helical tubing in the form of a single or double helix resides within the can. A first open end of the tubing is disposed in communication with the external chamber, and an opposing terminal end of the tubing is closed, preferably being accessible with a pull-tab as presently known in the field for opening a vessel responsive to pulling action by a user. When the terminal end of the tubing is opened it communicates with atmosphere, permitting the compressed gas to flow from the external chamber through the tubing and into atmosphere. The gas expands as it flows, thereby withdrawing heat from the surrounding beverage in which the tubing is submerged to cool the beverage.
摘要翻译：自冷饮料容器系统。该系统包括罐和外部室，其联接到罐的底部以在其中容纳压缩气体。单螺旋或双螺旋形式的螺旋管位于罐内。管道的第一开口端设置成与外部腔室连通，并且管道的相对的末端被封闭，优选地可以通过本领域已知的拉片来接近，以便响应于拉动动作来打开容器一个用户当管道的末端打开时，它与大气连通，允许压缩气体从外部室通过管道流入大气。气体在其流动时膨胀，从而从管道浸没的周围饮料中排出热量以冷却饮料。

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