专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090110626A1 Low Pressure Method of Annealing Diamonds 审中-公开
标题翻译：退火钻石的低压方法
公开(公告)号：US20090110626A1
公开(公告)日：2009-04-30
申请号：US12244053
申请日：2008-10-02
申请人： Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan , Yufei Meng
发明人： Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan , Yufei Meng
IPC分类号： B01J3/06 , A62D3/10 , C30B15/14
CPC分类号： C30B29/04 , B01J2203/0695 , C30B33/02
摘要： The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400° C. to about 2200° C. at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.
摘要翻译：本发明涉及在低压下改进金刚石的光学性质的方法，更具体地说涉及一种制备所需光学质量的CVD金刚石的方法，其包括生长CVD金刚石并将CVD金刚石的温度从约1400℃升高在大约1至大约760托的压力下，在金刚石稳定性场的还原气氛中，时间为约5秒至约3小时。

2. 再颁专利

USRE41189E1 Method of making enhanced CVD diamond 有权
标题翻译：增强CVD金刚石的方法
公开(公告)号：USRE41189E1
公开(公告)日：2010-04-06
申请号：US12362529
申请日：2009-01-30
申请人： Wei Li , Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan
发明人： Wei Li , Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan
IPC分类号： C23C16/27
CPC分类号： C30B33/02 , C23C16/27 , C23C16/56 , C30B29/04 , Y10S427/103
摘要： Single crystal CVD diamond is heated to temperatures of 1500° C. to 2900° C. under a pressure that prevents significant graphitization. The result is a CVD diamond with improved optical properties.
摘要翻译：将单晶CVD金刚石在防止显着石墨化的压力下加热至1500℃至2900℃的温度。结果是具有改善的光学性质的CVD金刚石。

3. 发明申请

US20090038934A1 APPARATUS AND METHOD FOR DIAMOND PRODUCTION 审中-公开
标题翻译：钻石生产的装置和方法
公开(公告)号：US20090038934A1
公开(公告)日：2009-02-12
申请号：US12253287
申请日：2008-10-17
申请人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
发明人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
IPC分类号： C01B31/06
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.
摘要翻译：一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的散热支架，非接触式温度测量装置，测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度测量，基于温度测量控制生长表面的温度杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

4. 发明申请

US20080241049A1 Ultrahard diamonds and method of making thereof 有权
标题翻译：超硬钻石及其制造方法
公开(公告)号：US20080241049A1
公开(公告)日：2008-10-02
申请号：US11979699
申请日：2007-11-07
申请人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan
发明人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan
IPC分类号： C01B31/06
CPC分类号： C30B33/02 , C01B32/25 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105 , C30B29/04 , C30B33/00 , G11B2220/20 , G11B2220/65 , H04N5/76 , H04N5/765 , H04N5/775 , H04N5/781 , H04N9/8042 , H04N9/8205
摘要： A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
摘要翻译：通过微波等离子体化学气相沉积生长的单晶金刚石在超过4.0GPa的压力下退火，并加热至超过1500℃的温度，其硬度大于120GPa。用于制造硬质单晶金刚石的方法包括生长单晶金刚石并在超过4.0GPa的压力和超过1500摄氏度的温度下退火单晶金刚石以具有超过120GPa的硬度。

5. 发明授权

US07883684B2 Colorless single-crystal CVD diamond at rapid growth rate 有权
标题翻译：无色单晶CVD金刚石生长速度快
公开(公告)号：US07883684B2
公开(公告)日：2011-02-08
申请号：US11438260
申请日：2006-05-23
申请人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan
发明人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan
IPC分类号： C30B23/00 , C01B31/06
CPC分类号： C30B29/04 , C01B32/25 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105
摘要： The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20° C., and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8% to about 20% CH4 per unit of H2 and from about 5 to about 25% O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 μm/hour.
摘要翻译：本发明涉及以快速生长速度生产无色单晶金刚石的方法。用于金刚石生产的方法包括控制金刚石的生长表面的温度，使得穿过金刚石的生长表面的所有温度梯度小于约20℃，并且通过微波等离子体化学气相沉积生长单晶金刚石在具有气氛的沉积室中的生长温度下金刚石的生长表面，其中所述气氛包含每单位H 2约8％至约20％CH 4和每单位CH 4约5至约25％O 2。本发明的方法可以生产大于10克拉的钻石。使用本发明的方法的生长速度可以大于50μm/小时。

6. 发明授权

US07754180B2 Ultrahard diamonds and method of making thereof 有权
标题翻译：超硬钻石及其制造方法
公开(公告)号：US07754180B2
公开(公告)日：2010-07-13
申请号：US11979699
申请日：2007-11-07
申请人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan
发明人： Russell J. Hemley , Ho-Kwang Mao , Chih-shiue Yan
IPC分类号： C01B31/06
CPC分类号： C30B33/02 , C01B32/25 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105 , C30B29/04 , C30B33/00 , G11B2220/20 , G11B2220/65 , H04N5/76 , H04N5/765 , H04N5/775 , H04N5/781 , H04N9/8042 , H04N9/8205
摘要： A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
摘要翻译：通过微波等离子体化学气相沉积生长的单晶金刚石在超过4.0GPa的压力下退火，并加热至超过1500℃的温度，其硬度大于120GPa。用于制造硬质单晶金刚石的方法包括生长单晶金刚石并在超过4.0GPa的压力和超过1500摄氏度的温度下退火单晶金刚石以具有超过120GPa的硬度。

7. 发明申请

US20100123098A1 ULTRATOUGH SINGLE CRYSTAL BORON-DOPED DIAMOND 有权
标题翻译：超级单晶水晶钻石钻石
公开(公告)号：US20100123098A1
公开(公告)日：2010-05-20
申请号：US12435565
申请日：2009-05-05
申请人： Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan , Qi Liang
发明人： Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan , Qi Liang
IPC分类号： C30B25/10 , C09K3/00
CPC分类号： C23C16/278 , C23C16/274 , C30B23/00 , C30B25/00 , C30B25/105 , C30B25/16 , C30B25/165 , C30B29/04
摘要： The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 μm/h.
摘要翻译：本发明涉及具有至少约22MPa m1 / 2的韧性的单晶硼掺杂CVD金刚石。本发明还涉及制造单晶硼掺杂CVD金刚石的方法。金刚石的生长速率可以为约20-100μm/ h。

8. 发明授权

US07452420B2 Apparatus and method for diamond production 有权
标题翻译：钻石生产的装置和方法
公开(公告)号：US07452420B2
公开(公告)日：2008-11-18
申请号：US11785996
申请日：2007-04-23
申请人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
发明人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
IPC分类号： C30B25/12
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.
摘要翻译：一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的散热支架，非接触式温度测量装置，测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度测量，基于温度测量控制生长表面的温度杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

9. 发明申请

US20080205456A1 Laser uses for single-crystal CVD Diamond 有权
标题翻译：激光用于单晶CVD钻石
公开(公告)号：US20080205456A1
公开(公告)日：2008-08-28
申请号：US12010613
申请日：2008-01-28
申请人： Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan
发明人： Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan
IPC分类号： H01S3/16
CPC分类号： C30B29/04 , C30B25/105 , C30B25/12 , H01S3/0405 , H01S3/0612 , H01S5/02484
摘要： The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a χ(3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.
摘要翻译：本发明涉及通过化学气相沉积生产的单晶金刚石的新型激光相关用途。一种这样的用途是作为激光器的散热器; 另一个这样的用途是作为变频器。本发明还涉及用于包含单晶金刚石的拉曼激光转换器的奇异（3）非线性晶体材料。

10. 发明授权

US07235130B2 Apparatus and method for diamond production 有权
公开(公告)号：US07235130B2
公开(公告)日：2007-06-26
申请号：US11043062
申请日：2005-01-27
申请人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
发明人： Russell J. Hemley , Ho-kwang Mao , Chih-shiue Yan , Yogesh K. Vohra
IPC分类号： C30B24/14 , C30B25/14
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式