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    • 9. 发明授权
    • Detection and reduction of dielectric breakdown in semiconductor devices
    • 检测和减少半导体器件中的介质击穿
    • US07943401B2
    • 2011-05-17
    • US12114587
    • 2008-05-02
    • Jamil Tamir-KheliWilliam A. Goddard, IIIMasayasu Miyata
    • Jamil Tamir-KheliWilliam A. Goddard, IIIMasayasu Miyata
    • H01L21/66
    • G01N21/66H01L22/00H01L22/24
    • Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H2, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for H2 molecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.
    • 公开了一种用于检测具有薄介电层的半导体器件的击穿电位的方法。 该方法包括测量薄介电层的光谱,并确定光谱是否表现出分解前体(H2,H间隙自由基,H连接基团和H连接的二聚体)的存在。 优选地,该方法在跨介电层的基本上有效的施加电场的存在下进行。 还公开了根据该方法测试的半导体器件。 另外,用于减少具有薄介电层的半导体器件的电介质击穿的方法涉及电介质中存在的用于H 2分子的第二分子的取代。 该第二分子优选不与Si或O反应以形成不期望的附着状态,并且可以是分子大小接近氢原子如氦的惰性气体。 还公开了使用该方法制造的半导体器件。
    • 10. 发明授权
    • De novo processing of electronic materials
    • 从头处理电子材料
    • US06685772B2
    • 2004-02-03
    • US10113919
    • 2002-03-28
    • William A. Goddard, IIIGyeong S. Hwang
    • William A. Goddard, IIIGyeong S. Hwang
    • C30B110
    • G06F17/5018
    • Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted based on external conditions and fundamental data for a set of microscopic processes that can occur during material processing operations. The concentration behavior of one or more fast components is calculated in two stages, by solving a first relationship for a time period before the fast component reaches a pseudo steady state at which the concentration of the fast component is determined by concentrations of one or more second components, and by solving a second relationship for a time period after the first component reaches the pseudo steady state. Application of these methods to modeling ultrashallow junction processing is also described.
    • 计算机程序和计算机实现的方法,用于从第一原理预测掺杂剂的行为和电子材料加工中的缺陷。 掺杂剂和缺陷组分在衬底晶格中的分布是基于在材料加工操作期间可能发生的一组微观工艺的外部条件和基本数据来预测的。 一个或多个快速组分的浓度行为通过在快速组分达到假稳定状态之前的时间段内求解第一关系来计算两个阶段,其中快速组分的浓度由一个或多个第二个浓度确定 并且通过在第一分量达到伪稳定状态之后的时间段内求解第二关系。 还描述了这些方法对超浅接合处理建模的应用。