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1. 发明授权

US06322640B1 Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element 失效
标题翻译：用于形成反铁磁交换偏磁电阻（MR）传感器元件的多重热退火方法
公开(公告)号：US06322640B1
公开(公告)日：2001-11-27
申请号：US09489969
申请日：2000-01-24
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
IPC分类号： H01F4100
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/302 , H01L43/12 , Y10T29/49034
摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.
摘要翻译：一种用于形成磁偏置磁阻（MR）层的方法。首先提供基板。然后在衬底上形成铁磁磁阻（MR）材料层。然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

2. 发明授权

US06129957A Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications 失效
标题翻译：形成用于磁阻（MR）和巨磁（MR）应用的第二反铁磁交换耦合层的方法
公开(公告)号：US06129957A
公开(公告)日：2000-10-10
申请号：US415247
申请日：1999-10-12
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/32 , H01F41/22 , H01F41/30 , H01L43/08 , H01L43/12 , B29C35/08 , H01F1/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/304 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , G11B5/3954 , H01F10/3286 , Y10S428/90 , Y10T428/1129
摘要： A method of manufacturing a magnetoresistive head comprises forming a magnetoresistive structure with a magnetoresistive element with a first AFM element. Perform a first annealing step at a high temperature with a high magnetic field. Form the remaining MR structure including second AFM elements. Perform a low magnetic field (H.sub.ann) annealing step following the fabrication of the second AFM elements. Then perform a no externally applied field (H.sub.ann =0) annealing step at a high temperature to increase the H.sub.ex of the second AFM element to full strength, whereby the stability of the first AFM element is enhanced or increases its H.sub.ex if there were a decrease during the low magnetic field annealing step.
摘要翻译：制造磁阻头的方法包括用具有第一AFM元件的磁阻元件形成磁阻结构。在高磁场下进行第一退火步骤。形成剩下的MR结构，包括第二个AFM元素。在制造第二AFM元件之后执行低磁场（汉斯）退火步骤。然后在高温下进行无外部施加的场（Hann = 0）退火步骤，以将第二AFM元件的Hex增加到全强度，由此如果存在减少，则第一AFM元件的稳定性增强或增加其Hex 在低磁场退火步骤期间。

3. 发明授权

US06291087B1 Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias 失效
标题翻译：具有增强的电阻率敏感性和增强的磁交换偏置的磁阻（MR）传感器元件
公开(公告)号：US06291087B1
公开(公告)日：2001-09-18
申请号：US09336786
申请日：1999-06-21
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Kochan Ju , Cheng Horng , Jei-Wei Chang
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Kochan Ju , Cheng Horng , Jei-Wei Chang
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3954 , G11B5/66 , G11B2005/3996 , Y10S428/90 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T428/1121
摘要： A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method. The method is particularly useful for forming a dual stripe magnetoresistive (DSMR) sensor element by employing a single magnetic exchange bias material with separate blocking temperatures.
摘要翻译：一种用于形成磁阻（MR）传感器元件的方法和根据该方法制造的磁阻传感器元件。首先提供基板。然后在衬底上形成磁阻（MR）层，包括：（1）由第一磁阻（MR）材料形成的磁阻（MR）层的体层，其被优化以提供增强的磁阻（MR）电阻率敏感性磁阻（MR）层; 和（2）由第二磁阻（MR）材料形成的磁阻（MR）层的表面层，其优化以在磁阻（MR）层的表面层上形成磁交换偏置层时提供增强的磁交换偏压。最后，在磁阻（MR）层的表面层上形成磁交换偏置层。该方法考虑了根据该方法制造的磁阻（MR）传感器元件。该方法对于通过采用具有单独的阻挡温度的单个磁交换偏压材料形成双重磁阻（DSMR）传感器元件特别有用。

4. 发明授权

US07529067B2 Exchange bias structure for abutted junction GMR sensor 失效
标题翻译：对接结GMR传感器的交换偏置结构
公开(公告)号：US07529067B2
公开(公告)日：2009-05-05
申请号：US11375323
申请日：2006-03-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.
摘要翻译：虽然已知交换偏压可用于邻接接头用于纵向稳定化，但是需要相对较大的力矩来有效地将传感器边缘压下。由于交换偏压对磁性层厚度的反向依赖性，现有技术难以实现大的交换偏压。通过引入通过与反铁磁层交换而将偏压层的磁矩从上下两端钉住而将偏置层的磁矩大致加倍的结构已经解决了这个问题。另外，由于反铁磁层直接与自由层接触，所以它直接作用以帮助稳定传感器边缘，这是相对于已经使用的传统静磁钉扎的优点。

5. 发明授权

US07099125B2 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US07099125B2
公开(公告)日：2006-08-29
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
IPC分类号： G11B5/39 , G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

6. 发明授权

US07050273B2 Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon 失效
标题翻译：底部旋转阀传感器，其上制造有铅覆盖（LOL）结构
公开(公告)号：US07050273B2
公开(公告)日：2006-05-23
申请号：US10922540
申请日：2004-08-20
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

7. 发明授权

US06785954B2 Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor 失效
标题翻译：在底部自旋阀GMR读取传感器上制造引线覆盖层（LOL）的方法
公开(公告)号：US06785954B2
公开(公告)日：2004-09-07
申请号：US10124004
申请日：2002-04-17
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

8. 发明申请

US20060164766A1 Exchange bias structure for abutted junction GMR sensor 失效
公开(公告)号：US20060164766A1
公开(公告)日：2006-07-27
申请号：US11375323
申请日：2006-03-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： G11B5/33 , B05D5/12 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

9. 发明授权

US07035060B2 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US07035060B2
公开(公告)日：2006-04-25
申请号：US10091959
申请日：2002-03-06
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

10. 发明授权

US07022383B2 Exchange bias structure for abutted junction GMR sensor 失效
公开(公告)号：US07022383B2
公开(公告)日：2006-04-04
申请号：US10277477
申请日：2002-10-22
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： B05D3/06 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

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