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1. 发明授权

US4038171A Supported plasma sputtering apparatus for high deposition rate over large area 失效
标题翻译：用于大面积高沉积速率的支撑等离子体溅射装置
公开(公告)号：US4038171A
公开(公告)日：1977-07-26
申请号：US672402
申请日：1976-03-31
申请人： Ronald W. Moss , Edwin D. McClanahan, Jr. , Nils Laegreid
发明人： Ronald W. Moss , Edwin D. McClanahan, Jr. , Nils Laegreid
IPC分类号： C23C14/34 , C23C15/00
CPC分类号： C23C14/3478
摘要： A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

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