专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4240845A Method of fabricating random access memory device 失效
标题翻译：制造随机存取存储器件的方法
公开(公告)号：US4240845A
公开(公告)日：1980-12-23
申请号：US118257
申请日：1980-02-04
申请人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , George T. Wenning
发明人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , George T. Wenning
IPC分类号： G11C11/404 , H01L21/033 , H01L21/8242 , H01L27/108 , H01L21/26 , H01L21/223
CPC分类号： H01L27/1085 , G11C11/404 , H01L21/033 , H01L27/10805
摘要： A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure. The electrical capacitance or storage node structure of each cell has increased electrical charge storage capacity and may be considered as a single capacitor. The single (storage) capacitor of each cell is provided between the source of the field effect transistor, a source of reference potential (reference plane) and the monolithic semiconductor substrate on which the memory is fabricated.The arrangement of the memory cells, the structure and material of each of the memory cells, and a method of fabricating the entire memory is disclosed. Also disclosed is an improved field effect transistor structure and process for fabricating same. The process of fabrication, cell arrangement and the improved storage node of each memory cell, as structurally fabricated and uniquely arranged, provides a monolithic memory having improved density and operating characteristics.
摘要翻译：在半导体材料的单片芯片上制造动态随机存取存储器。存储器由被选择性地连接到单元的字和位线读取和写入的存储器单元的阵列形成。每个单元是具有改进的电荷存储能力的单场效应晶体管结构。每个单元的改进的电荷存储能力由唯一地排列和形成为场效应晶体管结构的整体部分的电容结构提供。每个场效应晶体管结构的栅电极连接到预定的一条字线。每个场效应晶体管的漏极连接到预定的一个位线。每个场效应晶体管结构的源极整体连接并形成场效应晶体管结构的唯一排列的电容结构的一部分。每个单元的电容或存储节点结构具有增加的电荷存储容量，并且可以被认为是单个电容器。每个单元的单个（存储）电容器设置在场效应晶体管的源极，参考电位源（参考平面）和其上制造存储器的单片半导体衬底之间。存储单元的布置，每个存储单元的结构和材料以及制造整个存储器的方法都被公开。还公开了一种改进的场效应晶体管结构及其制造方法。每个存储单元的制造，单元布置和改进的存储节点的过程在结构上制造和独特地布置，提供了具有改进的密度和操作特性的单片存储器。

2. 发明授权

US4219834A One-device monolithic random access memory and method of fabricating same 失效
标题翻译：单器件单片随机存取存储器及其制造方法
公开(公告)号：US4219834A
公开(公告)日：1980-08-26
申请号：US850762
申请日：1977-11-11
申请人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , G. Thomas Wenning
发明人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , G. Thomas Wenning
IPC分类号： G11C11/401 , G11C5/06 , G11C11/404 , G11C11/4097 , H01L21/033 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/78 , H01L27/02
CPC分类号： H01L27/1085 , G11C11/404 , G11C11/4097 , G11C5/063 , H01L21/033 , H01L27/10805
摘要： A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure. The electrical capacitance or storage node structure of each cell has increased electrical charge storage capacity and may be considered as a single capacitor. The single (storage) capacitor of each cell is provided between the source of the field effect transistor, a source of reference potential (reference plane) and the monolithic semiconductor substrate on which the memory is fabricated.The arrangement of the memory cells, the structure and material of each of the memory cells, and a method of fabricating the entire memory is disclosed. Also disclosed is an improved field effect transistor structure and process for fabricating same. The process of fabrication, cell arrangement and the improved storage node of each memory cell, as structurally fabricated and uniquely arranged, provides a monolithic memory having improved density and operating characteristics.
摘要翻译：在半导体材料的单片芯片上制造动态随机存取存储器。存储器由被选择性地连接到单元的字和位线读取和写入的存储器单元的阵列形成。每个单元是具有改进的电荷存储能力的单场效应晶体管结构。每个单元的改进的电荷存储能力由唯一地排列和形成为场效应晶体管结构的整体部分的电容结构提供。每个场效应晶体管结构的栅电极连接到预定的一条字线。每个场效应晶体管的漏极连接到预定的一个位线。每个场效应晶体管结构的源极整体连接并形成场效应晶体管结构的唯一排列的电容结构的一部分。每个单元的电容或存储节点结构具有增加的电荷存储容量，并且可以被认为是单个电容器。每个单元的单个（存储）电容器设置在场效应晶体管的源极，参考电位源（参考平面）和其上制造存储器的单片半导体衬底之间。存储单元的布置，每个存储单元的结构和材料以及制造整个存储器的方法都被公开。还公开了一种改进的场效应晶体管结构及其制造方法。每个存储单元的制造，单元布置和改进的存储节点的过程在结构上制造和独特地布置，提供了具有改进的密度和操作特性的单片存储器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式