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    • 10. 发明授权
    • Enhanced DRAM with embedded registers
    • 具有嵌入式寄存器的增强型DRAM
    • US06347357B1
    • 2002-02-12
    • US09182994
    • 1998-10-30
    • Ronald H. SartoreKenneth J. MobleyDonald G. CarriganOscar Frederick Jones
    • Ronald H. SartoreKenneth J. MobleyDonald G. CarriganOscar Frederick Jones
    • G06F1200
    • G11C7/106G06F12/0893G11C7/1006G11C7/1051G11C7/1078G11C7/1087G11C11/005G11C11/406G11C11/4096Y02D10/13
    • An enhanced DRAM contains embedded row registers in the form of latches. The row registers are adjacent to the DRAM array, and when the DRAM comprises a group of subarrays, the row registers are located between DRAM subarrays. When used as on-chip cache, these registers hold frequently accessed data. This data corresponds to data stored in the DRAM at a particular address. When an address is supplied to the DRAM, it is compared to the address of the data stored in the cache. If the addresses are the same, then the cache data is read at SRAM speeds. The DRAM is decoupled from this read. The DRAM also remains idle during this cache read unless the system opts to precharge or refresh the DRAM. Refresh or precharge occur concurrently with the cache read. If the addresses are not the same, then the DRAM is accessed and the embedded register is reloaded with the data at that new DRAM address. Asynchronous operation of the DRAM is achieved by decoupling the row registers from the DRAM array, thus allowing the DRAM cells to be precharged or refreshed during a read of the row register.
    • 增强型DRAM包含锁存器形式的嵌入式行寄存器。 行寄存器与DRAM阵列相邻,并且当DRAM包括一组子阵列时,行寄存器位于DRAM子阵列之间。 当用作片上缓存时,这些寄存器保存频繁访问的数据。 该数据对应于在特定地址处存储在DRAM中的数据。 当将地址提供给DRAM时,将其与存储在高速缓存中的数据的地址进行比较。 如果地址相同,则以SRAM速度读取缓存数据。 DRAM与此读取分离。 在该高速缓存读取期间,DRAM还保持空闲,除非系统选择预充电或刷新DRAM。 刷新或预充电与缓存读取同时发生。 如果地址不一样,则DRAM被访问,并且嵌入式寄存器被重新加载在该新DRAM地址处的数据。 DRAM的异步操作是通过将DRAM寄存器与DRAM阵列去耦合来实现的,从而允许DRAM单元在行寄存器的读取期间被预充电或刷新。