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1. 发明授权

US5221856A Bipolar transistor with floating guard region under extrinsic base 失效
标题翻译：双极晶体管，外部基极具有浮动保护区域
公开(公告)号：US5221856A
公开(公告)日：1993-06-22
申请号：US833599
申请日：1992-02-10
申请人： Ronald Dekker , Martinus C. A. M. Koolen , Henricus G. R. Maas
发明人： Ronald Dekker , Martinus C. A. M. Koolen , Henricus G. R. Maas
IPC分类号： H01L21/225 , H01L21/285 , H01L21/32 , H01L21/3213 , H01L21/3215 , H01L21/331 , H01L21/60 , H01L29/732
CPC分类号： H01L21/76897 , H01L21/2257 , H01L21/28506 , H01L21/28525 , H01L21/32 , H01L21/32134 , H01L21/32155 , H01L29/66242 , H01L29/66272 , H01L29/7325
摘要： A first device region (10) of one conductivity type adjacent one major surface (1a) of a semiconductor body (1) has a relatively highly doped subsidiary region (11) spaced from the one major surface (1a) by a relatively lowly doped subsidiary region (12). A second device region (20) of the opposite conductivity type within the subsidiary region (12) has an intrinsic subsidiary region (21) and an extrinsic subsidiary region (23,24) surrounding the intrinsic subsidiary region (21) forming respective first and second pn junctions (22,25) with the relatively lowly doped subsidiary region (12). A third device region (30) of the one conductivity type is formed within the intrinsic subsidiary region (21) surface (1a). An additional region (60,60',61,62) is provided beneath the extrinsic subsidiary region (23,24) so as to lie within the spread of the depletion region (250) associated with the second pn junction (25) when the first and second pn junction (22,25) are reverse-biassed thereby extending the depletion region (250) beneath the emitter region (30) to cause an increase in the Early voltage (V.sub.eaf) of the device.
摘要翻译：与半导体本体（1）的一个主表面（1a）相邻的一种导电类型的第一器件区域（10）具有相对高度掺杂的辅助区域（11），该区域通过相对低掺杂的子元件与一个主表面（1a）间隔开区域（12）。在辅助区域（12）内具有相反导电类型的第二设备区域（20）具有内部辅助区域（21）和围绕内部辅助区域（21）的外在辅助区域（23,24），形成相应的第一和第二 pn结（22,25）与相对低掺杂的辅助区域（12）。一个导电类型的第三器件区域（30）形成在本征辅助区域（21）表面（1a）内。在外部辅助区域（23,24）的下方提供附加区域（60,60'，61,62），以便当位于与第二pn结（25）相关联的耗尽区域（250）的扩展区内时第一和第二pn结（22,25）被反向偏压，从而将耗尽区（250）延伸到发射极区（30）之下，以引起器件的早期电压（Veaf）的增加。

2. 发明授权

US5828122A Semiconductor body with a substrate glued to a support body 失效
标题翻译：具有胶合到支撑体上的基底的半导体体
公开(公告)号：US5828122A
公开(公告)日：1998-10-27
申请号：US815253
申请日：1997-03-12
申请人： Henricus G. R. Maas , Ronald Dekker , Theodorus M. Michielsen , Wilhelmus T. A. J. Van Den Einden
发明人： Henricus G. R. Maas , Ronald Dekker , Theodorus M. Michielsen , Wilhelmus T. A. J. Van Den Einden
IPC分类号： H01L27/12 , H01L21/02 , H01L21/58 , H01L23/04 , H01L23/10 , H01L23/16 , H01L23/64 , H01L29/00
CPC分类号： H01L24/83 , H01L23/04 , H01L23/10 , H01L24/26 , H01L2224/8319 , H01L2224/8385 , H01L2924/01013 , H01L2924/01058 , H01L2924/07802
摘要： A semiconductor device comprises a substrate (1) with a plane surface (4) on which a layer structure (2) is formed in a number of layers (5, 7, 9, 13, 15, 17). The side of the substrate on which the layer structure was formed is fastened to a plane support body (18) by means of a glue layer (19) which encompasses spacer elements (20). These spacer elements are fastened to the surface of the substrate and all have the same height measured from the surface (4). In fastening the substrate to the support body, glue is provided and the substrate is pressed onto the support body so that the pressure is evenly distributed over the spacer elements.
摘要翻译：半导体器件包括具有平面（4）的基板（1），层结构（2）在多个层（5,7,9,13,15,17）上形成。其上形成有层结构的基板的侧面通过包围间隔元件（20）的胶层（19）固定在平面支撑体（18）上。这些间隔元件固定在基片的表面上，并且都具有从表面（4）测量的相同的高度。在将基底固定到支撑体上时，提供胶水并将基底压在支撑体上，使得压力均匀地分布在间隔元件上。

3. 发明授权

US5753537A Method of manufacturing a semiconductor device for surface mounting 失效
标题翻译：制造用于表面安装的半导体器件的方法
公开(公告)号：US5753537A
公开(公告)日：1998-05-19
申请号：US792338
申请日：1997-01-31
申请人： Ronald Dekker , Henricus G. R. Maas , Martinus P. J. G. Versleijen
发明人： Ronald Dekker , Henricus G. R. Maas , Martinus P. J. G. Versleijen
IPC分类号： H01L21/60 , H01L21/68 , H01L21/762 , H01L23/48 , H01L23/482 , H01L21/44
CPC分类号： H01L21/76264 , H01L21/6835 , H01L23/481 , H01L23/4822 , H01L24/11 , H01L24/13 , H01L21/76289 , H01L2221/68359 , H01L2221/68363 , H01L2221/68377 , H01L2224/1308 , H01L2224/13099 , H01L2224/131 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01033 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/30105
摘要： The invention relates to a method of manufacturing a semiconductor device (1) for surface mounting. Such a method is known, whereby such a semiconductor device is manufactured in that a semiconductor body with a semiconductor element is mounted on a metal lead frame with metal package leads, after which contact surfaces of the semiconductor element are connected to the package leads by means of bonding wires. It is found that semiconductor devices of small dimensions are difficult to realize by this known method, while in addition the manufacture of integrated circuits with very many package leads is comparatively expensive owing to the many connections which are to be made between the integrated circuits and the package leads. According to the invention, the semiconductor devices are packaged while they are still on a slice of semiconductor material, while the package leads are formed from the semiconductor material. In the method according to the invention, the semiconductor devices are manufactured without the necessity of a lead frame, bonding wires, or metal package leads. Thanks to the IC technologies at the wafer level, such as photolithography, etching, etc., the method according to the invention renders possible semiconductor devices of very small dimensions. In addition, integrated circuits with very many package leads can be manufactured in a simple manner without additional steps being necessary. The method according to the invention is thus comparatively inexpensive.
摘要翻译：本发明涉及制造用于表面安装的半导体器件（1）的方法。这种方法是已知的，由此制造这样的半导体器件，其中具有半导体元件的半导体本体安装在具有金属封装引线的金属引线框架上，之后半导体元件的接触表面通过装置连接到封装引线的接合线。发现通过这种已知的方法难以实现小尺寸的半导体器件，而另外由于在集成电路和集成电路之间需要进行许多连接，所以具有非常多的封装引线的集成电路的制造相当昂贵包装线根据本发明，半导体器件在它们仍然在半导体材料片上时被封装，而封装引线由半导体材料形成。在根据本发明的方法中，半导体器件被制造而不需要引线框架，接合线或金属封装引线。由于晶圆级的IC技术，例如光刻，蚀刻等，根据本发明的方法使得可能的尺寸非常小的半导体器件成为可能。此外，具有非常多的封装引线的集成电路可以以简单的方式制造而无需额外的步骤。因此，根据本发明的方法相对便宜。

4. 发明授权

US5405789A Method of manufacturing a semiconductor device whereby a laterally bounded semiconductor zone is formed in a semiconductor body in a self-aligning manner 失效
标题翻译：制造半导体器件的方法，由此横向界限的半导体区以自对准方式形成在半导体本体中
公开(公告)号：US5405789A
公开(公告)日：1995-04-11
申请号：US141888
申请日：1993-10-22
申请人： Ronald Dekker , Henricus G. R. Maas , Armand Pruijmboom , Wilhelmus T. A. J. Van Den Einden
发明人： Ronald Dekker , Henricus G. R. Maas , Armand Pruijmboom , Wilhelmus T. A. J. Van Den Einden
IPC分类号： H01L21/28 , H01L21/331 , H01L21/335 , H01L21/336 , H01L21/8249 , H01L29/78 , H01L21/265
CPC分类号： H01L29/66303 , H01L21/28 , H01L21/8249 , H01L29/66416
摘要： A method of manufacturing a semiconductor device with a semiconductor element which includes a semiconductor zone (19) situated below an electrode (18) and adjoining a surface (5) of a semiconductor body (1), which semiconductor zone substantially does not project outside the electrode (18) in lateral direction. The electrode (18) is here formed on the surface (5) of the semiconductor body (1), after which semiconductor material adjoining the surface (5) and not covered by the electrode (18) is removed by an etching treatment, whereby the position of the semiconductor zone (19) below the electrode (18) is defined. Before the electrode (18) is formed, a surface zone (16) adjoining the surface (5) is formed in the semiconductor body (1) with a depth and a doping such as are desired for the semiconductor zone (19) to be formed below the electrode (18), after which the electrode (18) is formed on this surface zone and, during the etching treatment, the portion of the surface zone (16) not covered by the electrode (18) is etched away through its entire thickness. Conducting materials such as aluminium or aluminium alloys may be used for the electrode (18), i.e. materials which are not resistant to temperatures necessary for forming semiconductor zones through diffusion.
摘要翻译：一种制造具有半导体元件的半导体器件的方法，该半导体元件包括位于电极（18）下方并邻接半导体本体（1）的表面（5）的半导体区（19），该半导体区基本上不会突出在半导体本体电极（18）。此时，电极（18）形成在半导体本体（1）的表面（5）上，然后通过蚀刻处理去除邻接表面（5）并且未被电极（18）覆盖的半导体材料，由此，限定电极（18）下方的半导体区域（19）的位置。在形成电极（18）之前，在半导体本体（1）中形成与表面（5）相邻的表面区域（16），以形成半导体区域（19）所需的深度和掺杂在电极（18）的下方，之后在该表面区域上形成电极（18），并且在蚀刻处理期间，未被电极（18）覆盖的表面区域（16）的部分通过其整个厚度。可以使用诸如铝或铝合金的导电材料用于电极（18），即不耐受通过扩散形成半导体区域所需的温度的材料。

5. 发明授权

US5770487A Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization 失效
标题翻译：制造器件的方法，通过该方法，将具有半导体元件和导体迹线的衬底通过金属化胶合到支撑体上
公开(公告)号：US5770487A
公开(公告)日：1998-06-23
申请号：US641058
申请日：1996-04-29
申请人： Henricus G. R. Maas , Ronald Dekker , Maria H. W. A. Van Deurzen
发明人： Henricus G. R. Maas , Ronald Dekker , Maria H. W. A. Van Deurzen
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/02 , H01L21/336 , H01L21/58 , H01L21/60 , H01L21/768 , H01L21/77 , H01L23/498 , H01L23/522 , H01L27/12 , H01L29/786 , H02M3/155 , H02M3/28 , H01L21/84
CPC分类号： H01L24/83 , H01L23/49811 , H01L24/29 , H01L24/81 , H01L2221/68368 , H01L2224/16 , H01L2224/24225 , H01L2224/2919 , H01L2224/81801 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/0665 , H01L2924/07802 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/3025 , Y10S438/928 , Y10S438/977
摘要： A method of manufacturing a device whereby a layer structure with semiconductor elements and conductor tracks is formed on a first side of a semiconductor wafer which is provided with a layer of semiconductor material disposed on an insulating layer. Then the semiconductor wafer is fastened with said first side to a support wafer by means of a glue layer, the support wafer being provided with a metallization. Material is then removed from the semiconductor wafer from the other, second side thereof until the insulating layer is exposed. Contact windows are provided in the insulating layer from the first side of the semiconductor wafer before the latter is refastened on the support wafer. These windows are filled with a material which can be removed selectively relative to the insulating layer. The contact windows are opened from the second side of the semiconductor wafer after the latter has been fastened on the support wafer and after the insulating layer has been exposed. Furthermore, openings are formed in the layer structure and in the flue layer at the areas of the contact windows, which openings extend down to the metallization on the support wafer, after which the contact windows and the openings formed are provided with conductive elements.
摘要翻译：一种制造器件的方法，其中具有半导体元件和导体迹线的层结构形成在设置有设置在绝缘层上的半导体材料层的半导体晶片的第一侧上。然后，半导体晶片通过胶层与所述第一侧紧固到支撑晶片，所述支撑晶片设置有金属化。然后从另一个第二侧将材料从半导体晶片中取出直到绝缘层露出。在半导体晶片的第一侧的绝缘层中提供接触窗口，然后在支撑晶片上重新对准窗口。这些窗口填充有可相对于绝缘层选择性地去除的材料。在半导体晶片被固定在支撑晶片上之后并且在绝缘层已经暴露之后，接触窗口从半导体晶片的第二侧被打开。此外，在接触窗口的区域中的层结构和烟道层中形成开口，这些开口向下延伸到支撑晶片上的金属化，之后形成的接触窗口和开口设置有导电元件。

6. 发明授权

US5736452A Method of manufacturing a hybrid integrated circuit 失效
标题翻译：混合集成电路的制造方法
公开(公告)号：US5736452A
公开(公告)日：1998-04-07
申请号：US815245
申请日：1997-03-12
申请人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. Van Den Einden , Maria H. W. A. Van Deurzen
发明人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. Van Den Einden , Maria H. W. A. Van Deurzen
IPC分类号： H01L21/762 , H01L21/02 , H01L21/20 , H01L21/58 , H01L21/84 , H01L25/16 , H01L27/12 , H01L27/13 , H01P11/00 , H01L21/306
CPC分类号： H01L24/83 , H01L24/29 , H01L2224/2919 , H01L2224/8319 , H01L2224/8385 , H01L2924/01013 , H01L2924/01015 , H01L2924/0665 , H01L2924/07802 , H01L2924/1305 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107
摘要： A method of manufacturing a semiconductor device with a substrate (1) provided with a passive element (2), a pattern of conductors (3, 4), and a semiconductor element (5) which is formed in a small slice (6) of semiconductor material. The passive element (2), the pattern of conductors (3, 4), and the semiconductor element (5) are formed at a first side (8) of a wafer of semiconductor material (7), whereupon this wafer is glued with its first side (8) to the substrate (1), and the semiconductor material of the wafer (7) is removed from the second side (22) thereof, except at the area of the semiconductor element (5). A small slice (6) of semiconductor material thus remains in which the semiconductor element (5) has been formed. The wiring may be realized in a simple manner without the introduction of additional and expensive process steps, while the introduction of parasitic capacitances and self-inductances is counteracted.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有设置有无源元件（2）的基板（1），导体图案（3,4）和半导体元件（5），所述半导体器件形成在小片（6）中半导体材料。无源元件（2），导体（3,4）和半导体元件（5）的图案形成在半导体材料（7）的晶片的第一侧（8）处，由此将该晶片与其第一侧（8）到基板（1），并且除了半导体元件（5）的区域之外，晶片（7）的半导体材料从第二侧（22）除去。因此，保留形成半导体元件（5）的半导体材料的小片（6）。在不引入附加和昂贵的工艺步骤的情况下，可以以简单的方式实现布线，同时抵消了寄生电容和自感的引入。

7. 发明授权

US5629554A Semiconductor device with a bipolar transistor formed in a layer of semiconductor material provided on an insulating substrate 失效
标题翻译：半导体器件具有形成在绝缘衬底上的半导体材料层中的双极晶体管
公开(公告)号：US5629554A
公开(公告)日：1997-05-13
申请号：US637012
申请日：1996-04-24
申请人： Henricus G. R. Maas , Ronald Dekker , Armand Pruijmboom
发明人： Henricus G. R. Maas , Ronald Dekker , Armand Pruijmboom
IPC分类号： H01L29/73 , H01L21/331 , H01L29/735 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/66265 , H01L29/7317
摘要： A semiconductor device with a bipolar transistor formed in a layer of semiconductor material (2) provided on an insulating substrate (1), in which material a collector zone (4), a base zone (5), and an emitter zone (6) are provided below a strip of insulating material (3) situated on the layer (2), which zones are connected to contact regions (7, 8, 9, 10) lying adjacent the strip (3), three of the contact regions (8, 9, 10) lying next to one another at a same side of the strip (3), of which two (8 and 9) are connected to the base zone (5) while the third (10), which lies between the former two (8 and 9), is connected to the emitter zone (6). The three contact regions (8, 9, 10) situated next to another at the same side of the strip (3) are provided alternately in the layer of semiconductor material (2) and in a further layer of semiconductor material (19) extending up to the strip (3). The three contact regions (8, 9, 10) connected to the base zone (5) and the emitter zone (6) may be provided with mutual interspacings which are smaller than the details which can be realised in a photoresist layer by means of the photolithographic process to be used in the manufacture of the transistor. As a result, the transistor can be manufactured with a very small extrinsic base.
摘要翻译：一种具有双极晶体管的半导体器件，其形成在设置在绝缘基板（1）上的半导体材料层（2）中，其中，集电区（4），基极区（5）和发射极区（6）设置在位于层（2）上的绝缘材料条（3）的下方，这些区域连接到位于条带（3）附近的接触区域（7,8,9,10），三个接触区域（8），9,10）彼此相邻放置在条带（3）的同一侧，其中两个（8和9）连接到基部区域（5），而第三个（10）位于前者两个（8和9）连接到发射区（6）。位于带（3）的同一侧的另一侧的三个接触区域（8,9,10）交替地设置在半导体材料层（2）中，并在另一层半导体材料（19）中向上延伸（3）。连接到基部区域（5）和发射极区域（6）的三个接触区域（8,9,10）可以具有相对的间隔，该相互间隔小于可以通过光刻胶层光刻工艺用于制造晶体管。结果，晶体管可以用非常小的外在基极制造。

8. 发明授权

US5504036A Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material provided on a support slice 失效
标题翻译：制造半导体器件的方法，半导体器件形成在设置在支撑片上的半导体材料层中
公开(公告)号：US5504036A
公开(公告)日：1996-04-02
申请号：US447597
申请日：1995-05-23
申请人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. van den Einden
发明人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. van den Einden
IPC分类号： H01L21/60 , H01L21/02 , H01L21/027 , H01L21/336 , H01L21/68 , H01L21/84 , H01L23/48 , H01L27/12 , H01L29/786 , H01L21/44
CPC分类号： H01L21/6835 , H01L21/84 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2224/04042 , H01L2224/05599 , H01L2224/05624 , H01L2224/48463 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/05042 , H01L2924/1305 , H01L2924/1306 , Y10S148/012
摘要： A method is provided of manufacturing a semiconductor device whereby semiconductor elements (5) and conductor tracks (14) are formed on a first side (2) of a semiconductor slice (1) which is provided with a layer of semiconductor material (4) disposed on an insulating layer (3). Then the semiconductor slice (1) is fastened with said first side (2) to a support slice (15), after which material is removed from the semiconductor slice (1) from the other, second side (17) until the insulating layer (3) has become exposed. The insulating layer (3) is provided with contact windows (18) in which conductive elements (19) are provided. This is done from the first side (2) of the semiconductor slice (1) before the latter is fastened to the support slice (15). The semiconductor elements (5) are externally contacted with a contact wire (20) via the conductive elements (19). The contact windows (18) and the conductive elements (19) may be formed during process steps which are carried out for manufacturing the semiconductor elements.
摘要翻译：提供一种制造半导体器件的方法，由此在半导体片（1）的第一侧（2）上形成半导体元件（5）和导体轨道（14），半导体片（1）设置有设置有半导体材料层（4）在绝缘层（3）上。然后将半导体片（1）与所述第一侧（2）紧固到支撑片（15），然后将材料从另一个第二侧（17）从半导体片（1）移除直到绝缘层（ 3）已经暴露。绝缘层（3）设有接触窗（18），其中设有导电元件（19）。这在半导体片（1）的第一侧（2）之前完成，之后将其固定到支撑片（15）。半导体元件（5）经由导电元件（19）与接触导线（20）外部接触。接触窗（18）和导电元件（19）可以在用于制造半导体元件的工艺步骤期间形成。

9. 发明授权

US06580583B1 Magnetic head with integrated circuit on a rigid body 失效
标题翻译：磁头与集成电路在刚体上
公开(公告)号：US06580583B1
公开(公告)日：2003-06-17
申请号：US08966229
申请日：1997-11-07
申请人： Derk J. Adelerhof , Ronald Dekker , Henricus G. R. Maas
发明人： Derk J. Adelerhof , Ronald Dekker , Henricus G. R. Maas
IPC分类号： G11B5147
CPC分类号： G11B5/127 , G11B5/31
摘要： A thin-film magnetic head has a semiconductor substrate in which there is an integrated circuit, and on which a magnetic layer structure is arranged. During manufacturing the integrated circuit is formed on one side of the semiconductor substrate, and that side of the semiconductor substrate is then secured to a carrier body by a securing layer. The substrate may then be ground or etched to a thickness less than 35&mgr;m before forming the magnetic layer structure on the opposite side. Securing to the carrier body prevents deformation of the layer structure during manufacturing, so that the resulting head has reproducible properties. Preferably a support body is secured over the layer structure. The head face is then formed such that the layer structure and the support and carrier bodies terminate in it.
摘要翻译：薄膜磁头具有半导体衬底，其中存在集成电路，并且在其上布置有磁性层结构。在制造期间，集成电路形成在半导体衬底的一侧上，然后通过固定层将半导体衬底的该侧固定到载体上。然后可以在形成相对侧的磁性层结构之前将衬底研磨或蚀刻至小于35μm的厚度。固定到承载体防止制造过程中的层结构的变形，从而得到的头具有可重现的性质。优选地，支撑体固定在层结构上。然后形成头部表面，使得层结构和支撑体和载体主体终止于其中。

10. 发明授权

US6104081A Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer 失效
标题翻译：具有半导体元件的半导体器件形成在粘合在支撑晶片上的半导体材料层中
公开(公告)号：US6104081A
公开(公告)日：2000-08-15
申请号：US80784
申请日：1998-05-18
申请人： Ronald Dekker , Henricus G. R. Maas , Steffen Wilhelm Hahn
发明人： Ronald Dekker , Henricus G. R. Maas , Steffen Wilhelm Hahn
IPC分类号： H01L21/02 , H01L21/20 , H01L21/336 , H01L21/58 , H01L21/60 , H01L21/68 , H01L23/498 , H01L27/12 , H01L29/786 , H01L29/06 , H01L23/58
CPC分类号： H01L21/6835 , H01L23/49811 , H01L24/29 , H01L24/81 , H01L24/83 , H01L27/1203 , H01L2221/68359 , H01L2221/68363 , H01L2224/2919 , H01L2224/81801 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01015 , H01L2924/01033 , H01L2924/0665 , H01L2924/07802 , H01L2924/1305 , H01L2924/1306 , H01L2924/30105 , Y10S438/928 , Y10S438/958
摘要： A method of manufacturing a semiconductor device which starts with a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) lying on an insulating layer (3) at a first side (2). Semiconductor elements (5) and conductor tracks (14) are formed on this first side (2) of the semiconductor wafer (1). Then the semiconductor wafer (1) is fastened with this first side (2) to a support wafer (15), and material (18) is removed from the semiconductor wafer (1) from its other, second side (17) until the insulating layer (3) has been exposed. The method starts with a semiconductor wafer (1) whose insulating layer (3) is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.
摘要翻译：一种制造半导体器件的方法，该半导体器件从在第一侧（2）上设置有位于绝缘层（3）上的半导体材料层（4）的半导体晶片（1）开始。在半导体晶片（1）的第一侧（2）上形成有半导体元件（5）和导体轨迹（14）。然后将半导体晶片（1）与该第一侧（2）紧固到支撑晶片（15），并且从其另一侧（17）将材料（18）从半导体晶片（1）移除，直到绝缘层（3）暴露。该方法从其绝缘层（3）和绝缘层的半导体晶片（1）开始。半导体器件在其制造之后必须设置有通常的钝化层，以便防止其受潮和其它影响。在这里描述的方法中，这种钝化层在半导体器件的制造开始之前已经存在。

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