专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5480686A Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges 失效
标题翻译：使用水基等离子体放电的金刚石膜的化学气相沉积工艺和设备
公开(公告)号：US5480686A
公开(公告)日：1996-01-02
申请号：US151184
申请日：1993-11-12
申请人： Ronald A. Rudder , George C. Hudson , Robert C. Hendry , Robert J. Markunas , Michael J. Mantini
发明人： Ronald A. Rudder , George C. Hudson , Robert C. Hendry , Robert J. Markunas , Michael J. Mantini
IPC分类号： H05H1/46 , B05D3/06 , C23C16/26 , C23C16/27 , C23C16/452 , C23C16/50 , C23C16/507 , C30B29/04
CPC分类号： C23C16/272 , C23C16/277 , C23C16/452 , C23C16/507
摘要： A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedstock gas enters a conversion zone. In the second step, by-products from the conversion zone proceed to an atomization zone where diamond is produced. In a preferred embodiment a feedstock gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (55.degree.-1100.degree. C.) and low pressure (0.1 to 100 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the reaction process, the feedstock gas mixture is converted to H.sub.2, CO, C.sub.2 H.sub.2, no O.sub.2, with some residual water. Oxygen formerly on the water is transferred to CO. Hence, an etchant species (H.sub.2 O, OH, O) is replaced in the reactor by CO, a growth species and prevents undesirous consumption of diamond (the net-product). In a preferred embodiment, the apparatus assures conversion by preventing gas circumvention of the conversion zone prior to dissociation in the hydrogen atomization zone to produce the necessary atomic hydrogen for diamond growth.
摘要翻译：用于使用具有所需部分的所选化合物的蒸气混合物生长金刚石膜的化学气相沉积（CVD）方法和装置，特别是提供除去石墨的碳和蚀刻剂物质的前体。该过程涉及两个步骤。在第一步中，原料气进入转化区。在第二步，转化区的副产物进入到产生钻石的雾化区。在优选的实施方案中，包含提供蚀刻剂物质的至少20％的水的原料气相混合物与在低温（55℃-1100℃）和低压（0.1至100℃）下提供所需碳前体的醇反应 Torr），优选在有助酸（乙酸）存在下，其有助于蚀刻剂物质的反应物。在反应过程中，原料气体混合物被转化为H 2，CO，C 2 H 2，没有O 2，并含有一些残留的水。以前在水上的氧气被转移到CO，因此，在反应器中用CO（一种生长物质）代替蚀刻剂物质（H 2 O，OH，O），并防止金刚石（净产物）的不必要的消耗。在优选的实施方案中，该装置通过在氢雾化区中解离之前防止气体绕开转化区来确保转化，以产生金刚石生长所需的原子氢。

IPRDB

热门服务

关于我们

友情链接

联系方式