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    • 6. 发明授权
    • Control process for a monocrystal pulling machine
    • 单晶拉机的控制过程
    • US4660149A
    • 1987-04-21
    • US659438
    • 1984-10-10
    • Francois LissaldeDelageniere BrunoFerrieu Bruno
    • Francois LissaldeDelageniere BrunoFerrieu Bruno
    • C30B15/20C30B15/22C30B15/28G05B11/00B01J17/00
    • C30B15/22C30B15/28Y10T117/1072
    • The invention relates to a process for the control of a monocrystal pulling machine.The process consists of recording in a computer memory parameters relating to the geometry of the monocrystal and the growth thereof, signals representative of the weight of the crystal and processed by processing circuits, then recording in said memory a programme so that the computer successively controls the raising to the appropriate temperature of the heating means for successively bringing about the melting of the product for forming the monocrystal, a fast automatic approach of the product bath by a pin carrying a nucleus up to a predetermined distance from the surface of said bath. Finally, the process consists of controlling a slower bath approach until the nucleus is in contact with the bath surface. Following this contact, the temperature of the heating means is automatically regulated for a zero growth of the crystal, the automatic pulling of the crystal and the cooling of the heating means at the end of pulling.Application to the pulling of monocrystals.
    • 本发明涉及一种用于控制单晶拉制机的方法。 该过程包括在计算机存储器中记录与单晶的几何形状及其生长相关的参数,表示晶体的重量并由处理电路处理的信号,然后在所述存储器中记录程序,使得计算机连续地控制 升高到加热装置的适当温度,以便连续地引起用于形成单晶的产物的熔化,通过将细胞核从所述浴表面延伸到预定距离的针快速自动接近产品浴。 最后,该过程包括控制较慢的浴法,直到细胞核与浴液表面接触。 在该接触之后,自动调节加热装置的温度以使晶体零增长,在拉动结束时晶体的自动拉动和加热装置的冷却。 应用于单晶的拉动。