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1. 发明申请

US20190092972A1 AQUEOUS SILICA SLURRY AND AMINE CARBOXYLIC ACID COMPOSITIONS SELECTIVE FOR NITRIDE REMOVAL IN POLISHING AND METHODS OF USING THEM 审中-公开
公开(公告)号：US20190092972A1
公开(公告)日：2019-03-28
申请号：US15719031
申请日：2017-09-28
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Naresh Kumar Penta , Yi Guo , David Mosley , Matthew Van Hanehem , Kwadwo E. Tettey
IPC分类号： C09G1/02 , C09K3/14
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.

2. 发明申请

US20180094166A1 CMP POLISHING COMPOSITION COMPRISING POSITIVE AND NEGATIVE SILICA PARTICLES 审中-公开
公开(公告)号：US20180094166A1
公开(公告)日：2018-04-05
申请号：US15281873
申请日：2016-09-30
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley
IPC分类号： C09G1/02 , H01L21/306 , H01L21/3105
CPC分类号： C09G1/02 , H01L21/30625 , H01L21/31051
摘要： The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising a positively charged silica particle composition with from 3 to 20 wt. % in total, based on the total silica particle solids in the CMP polishing composition, of one or more negatively charged silica particle compositions in which the silica particles have a z-average particle size as determined by Dynamic Light Scattering (DLS) of from 5 to 50 nm. The z-average particle size (DLS) ratio of the silica particles in the positively charged silica particle composition to that of the silica particles in the one or more negatively charged silica particle compositions ranges from 1:1 to 5:1 or, preferably, from 5:4 to 3:1. The compositions enable improved polishing of dielectric or oxide substrates and are shelf stable for at least 7 days at room temperature.

3. 发明授权

US09293339B1 Method of polishing semiconductor substrate 有权
标题翻译：抛光半导体衬底的方法
公开(公告)号：US09293339B1
公开(公告)日：2016-03-22
申请号：US14863548
申请日：2015-09-24
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley
IPC分类号： H01L21/302 , H01L21/461 , H01L21/306 , H01L21/3105
CPC分类号： H01L21/31055 , C09G1/02 , H01L21/02024
摘要： A process for chemical mechanical polishing of a substrate having an exposed silicon dioxide feature is provided comprising: providing a chemical mechanical polishing composition, containing, as initial components: water, a colloidal silica abrasive and a zirconyl compound; wherein a pH of the chemical mechanical polishing composition is ≦6; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad in proximity to an interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate; wherein the substrate is polished.
摘要翻译：提供了具有暴露的二氧化硅特征的基底的化学机械抛光的方法，其包括：提供化学机械抛光组合物，其包含作为初始成分的水，胶态二氧化硅磨料和锆基化合物; 其中所述化学机械抛光组合物的pH为6; 提供具有抛光表面的化学机械抛光垫; 将化学机械抛光组合物分配到化学机械抛光垫的抛光表面附近靠近化学机械抛光垫和基底之间的界面; 并且在化学机械抛光垫和衬底之间的界面处产生动态接触; 其中衬底被抛光。

4. 发明申请

US20190062593A1 AQUEOUS SILICA SLURRY COMPOSITIONS FOR USE IN SHALLOW TRENCH ISOLATION AND METHODS OF USING THEM 审中-公开
公开(公告)号：US20190062593A1
公开(公告)日：2019-02-28
申请号：US15691115
申请日：2017-08-30
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Naresh Kumar Penta , Julia Kozhukh , David Mosley , Kancharla-Arun K. Reddy , Matthew Van Hanehem
IPC分类号： C09G1/02 , H01L21/3105
摘要： The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallylamine salt having a cationic amine group, such as a diallylammonium halide, or a diallylalkylamine salt having a cationic amine group, such as a diallylalkylammonium salt, or mixtures of the copolymers, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallylamine salt having a cationic amine group comprises a copolymer of diallylammonium chloride and sulfur dioxide and the copolymer of the diallylalkylamine salt having a cationic amine group comprises a copolymer of diallylmonomethylammonium halide, e.g. chloride, and sulfur dioxide. The slurry compositions demonstrate good oxide selectivity in the CMP polishing of pattern wafers having nitride and silicon patterns.

5. 发明授权

US10119048B1 Low-abrasive CMP slurry compositions with tunable selectivity 有权
公开(公告)号：US10119048B1
公开(公告)日：2018-11-06
申请号：US15664544
申请日：2017-07-31
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley , Naresh Kumar Penta
IPC分类号： C09G1/02 , H01L21/3105
摘要： The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of one or more surfactants chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and colloidal silica particles having at least one cationic species, the colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, and the compositions having a pH ranging from 2 to 6. The surfactants have a hydrophobic tail. The CMP polishing compositions exhibit tunable oxide:polysilicon and oxide:nitride removal rate ratios and reduce both silicon nitride and polysilicon removal rates significantly without significantly reducing dielectric (e.g. TEOS) removal rates.

6. 发明授权

US09534148B1 Method of polishing semiconductor substrate 有权
标题翻译：抛光半导体衬底的方法
公开(公告)号：US09534148B1
公开(公告)日：2017-01-03
申请号：US14976066
申请日：2015-12-21
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley
IPC分类号： C09G1/02 , B24B37/20 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/20 , H01L21/31053
摘要： A process for chemical mechanical polishing of a substrate is provided, comprising: providing the substrate, wherein the substrate has an exposed silicon dioxide; providing a chemical mechanical polishing composition, consisting of, as initial components: water, a colloidal silica abrasive; optionally, a substance according to formula (I); a substance according to formula (II); and, optionally, a pH adjusting agent; wherein a pH of the chemical mechanical polishing composition is ≦6; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface in proximity to an interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished; wherein some of the exposed silicon dioxide is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供所述基板，其中所述基板具有暴露的二氧化硅; 提供化学机械抛光组合物，由以下组分组成：水，胶态二氧化硅磨料; 任选地，根据式（I）的物质; 根据式（II）的物质; 和任选的pH调节剂; 其中所述化学机械抛光组合物的pH为≤6; 提供具有抛光表面的化学机械抛光垫; 将化学机械抛光组合物分配到靠近化学机械抛光垫和基底之间的界面的抛光表面上; 并且以0.69〜34.5kPa的向下力在化学机械抛光垫与基板之间的界面处产生动态接触; 其中所述基底被抛光; 其中一些暴露的二氧化硅从基底上除去。

7. 发明申请

US20200239734A1 ACID POLISHING COMPOSITION AND METHOD OF POLISHING A SUBSTRATE HAVING ENHANCED DEFECT INHIBITION 审中-公开
公开(公告)号：US20200239734A1
公开(公告)日：2020-07-30
申请号：US16256593
申请日：2019-01-24
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley
IPC分类号： C09G1/02 , B24B37/04 , H01L21/306
摘要： An acid chemical mechanical polishing composition includes colloidal silica abrasive particles having a positive zeta potential, and select alkoxysilane succinic acid anhydride compounds to enhance the reduction of defects on dielectric materials of substrates such as silicon dioxide and silicon nitride. Also disclosed are methods for polishing a substrate with the acid chemical mechanical polishing composition to remove some of the dielectric materials such as silicon dioxide and silicon nitride.

8. 发明申请

US20190092970A1 AQUEOUS LOW ABRASIVE SILICA SLURRY AND AMINE CARBOXYLIC ACID COMPOSITIONS FOR USE IN SHALLOW TRENCH ISOLATION AND METHODS OF MAKING AND USING THEM 审中-公开
公开(公告)号：US20190092970A1
公开(公告)日：2019-03-28
申请号：US15718998
申请日：2017-09-28
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley , Naresh Kumar Penta
IPC分类号： C09G1/02 , C09K3/14 , H01L21/3105 , H01L21/762
摘要： The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising one or more dispersions of colloidal silica particles having a zeta potential of from +5 to +50 mV and having one or more aminosilane group, preferably, elongated, bent or nodular colloidal silica particles, or, more preferably, such particles which contain a cationic nitrogen atom, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) of from 2.5 to 5, preferably, from 3 to 4. The compositions have a pH of from 2.5 to 5.3. Preferably, the amine heterocycle carboxylic acid is an amine-containing heterocyclic monocarboxylic acid, such as nicotinic acid, picolinic acid, or isonicotinic acid. The compositions enable enhanced oxide:nitride removal rate ratios.

9. 发明授权

US09783702B1 Aqueous compositions of low abrasive silica particles 有权
公开(公告)号：US09783702B1
公开(公告)日：2017-10-10
申请号：US15297716
申请日：2016-10-19
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley , Matthew Van Hanehem
IPC分类号： G09G1/02 , C09G1/02 , C09K3/14 , C09G1/04 , C09G1/06 , C09G1/00 , C09K13/06 , C01B33/14 , H01L21/306 , C01B33/18 , B24B37/04 , H01L21/321
CPC分类号： C09G1/02 , B24B37/044 , C01B33/00 , C01B33/14 , C01B33/18 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.

10. 发明授权

US10781343B2 Acid polishing composition and method of polishing a substrate having enhanced defect inhibition 有权
公开(公告)号：US10781343B2
公开(公告)日：2020-09-22
申请号：US16256593
申请日：2019-01-24
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley
IPC分类号： C09G1/02 , H01L21/306 , B24B37/04 , B24B1/00 , C09G1/00 , C09K3/14 , C09G1/04 , C09G1/06 , C09K13/06 , H01L21/321
摘要： An acid chemical mechanical polishing composition includes colloidal silica abrasive particles having a positive zeta potential, and select alkoxysilane succinic acid anhydride compounds to enhance the reduction of defects on dielectric materials of substrates such as silicon dioxide and silicon nitride. Also disclosed are methods for polishing a substrate with the acid chemical mechanical polishing composition to remove some of the dielectric materials such as silicon dioxide and silicon nitride.

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