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    • 1. 发明申请
    • Bipolar transistor with graded base layer
    • 具有分级基极层的双极晶体管
    • US20050139863A1
    • 2005-06-30
    • US10969804
    • 2004-10-20
    • Roger WelserPaul DeLucaCharles LutzKevin StevensNoren Pan
    • Roger WelserPaul DeLucaCharles LutzKevin StevensNoren Pan
    • H01L21/331H01L29/10H01L29/20H01L29/737H01L31/0328
    • H01L29/1004H01L29/2003H01L29/66318H01L29/7371
    • A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.
    • 具有高碳掺杂浓度的半导体材料包括镓,铟,砷和氮。 所公开的半导体材料由于获得的高碳掺杂剂浓度而具有低的薄层电阻率。 该材料可以是基于砷化镓的异质结双极晶体管的基极层,并且可以通过控制基极层中的铟和氮的浓度而与砷化镓发射极和/或集电极层晶格匹配。 基层可以具有渐变带隙,其通过改变用于减少相对于表示该层的主体的不同III-V元素的带隙的III和V添加元素的沉积期间的流速而形成。 III和V添加元素的流速在沉积期间保持基本恒定的掺杂迁移率产物值,并且可以调节以在所得晶体管内的结处获得预选的基极 - 发射极电压。