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1. 发明授权

US5913713A CMP polishing pad backside modifications for advantageous polishing results 失效
标题翻译： CMP抛光垫背面修改，有利于抛光结果
公开(公告)号：US5913713A
公开(公告)日：1999-06-22
申请号：US904288
申请日：1997-07-31
申请人： Roger W. Cheek , John E. Cronin , Douglas P. Nadeau , Matthew J. Rutten , Terrance M. Wright
发明人： Roger W. Cheek , John E. Cronin , Douglas P. Nadeau , Matthew J. Rutten , Terrance M. Wright
IPC分类号： B24B37/26 , B24D13/12 , B24D13/14 , B24B1/00
CPC分类号： B24B37/26
摘要： A polishing pad and method of polishing with a chemical mechanical planarization apparatus includes providing a bulk polishing pad material having a front polishing surface side and a back side. The polishing pad further includes a polishing pad wear indicator for indicating a polishing pad wear during a life cycle of the polishing pad. The polishing pad wear indicator is formed on the back side of the bulk polishing pad material.
摘要翻译：抛光垫和用化学机械平面化装置抛光的方法包括提供具有前抛光表面侧和背面的主抛光垫材料。抛光垫还包括用于在抛光垫的寿命周期内指示抛光垫磨损的抛光垫磨损指示器。抛光垫磨损指示器形成在大量抛光垫材料的背面上。

2. 发明授权

US5877589A Gas discharge devices including matrix materials with ionizable gas filled sealed cavities 失效
标题翻译：气体放电装置包括具有可电离气体填充的密封空腔的基体材料
公开(公告)号：US5877589A
公开(公告)日：1999-03-02
申请号：US819346
申请日：1997-03-18
申请人： Clifford O. Morgan , Matthew J. Rutten , Erick G. Walton , Terrance M. Wright
发明人： Clifford O. Morgan , Matthew J. Rutten , Erick G. Walton , Terrance M. Wright
IPC分类号： H01J17/49 , H01J65/04
CPC分类号： H01J11/00 , H01J17/49 , H01J65/042
摘要： A gas discharge illumination device is prepared by encapsulating ionizable gas within microporous or nanoscale sealed cavities created within a matrix material. Upon exposure of said matrix material to an electric field, the ionizable gas becomes ionized and emits light. By incorporating several different ionizable gases into one matrix material, a display with different colors of light can be produced. The gas discharge illumination device can be fabricated by a variety of techniques including selective cavity formation with overcoating taking place in an ionizable gas ambient, and bubbling ionizable gas through the matrix material while it is in viscous form. The gas discharge illumination device can be used to form either active or passive displays, as a sensor for detecting electric fields, and in other applications.
摘要翻译：气体放电照明装置通过将可电离气体封装在基体材料内产生的微孔或纳米级密封空腔内来制备。当将所述基体材料暴露于电场时，可离子化气体被离子化并发光。通过将几种不同的可电离气体并入一种基质材料中，可以产生具有不同颜色的光的显示器。气体放电照明装置可以通过各种技术制造，包括在可电离气体环境中发生外涂层的选择性空腔形成，以及当其为粘性形式时通过基质材料鼓泡可电离气体。气体放电照明装置可用于形成有源或无源显示器，作为用于检测电场的传感器以及其它应用。

3. 发明授权

US6110832A Method and apparatus for slurry polishing 有权
标题翻译：浆料抛光方法和设备
公开(公告)号：US6110832A
公开(公告)日：2000-08-29
申请号：US301050
申请日：1999-04-28
申请人： Clifford O. Morgan, III , Matthew J. Rutten , Erick G. Walton , Terrance M. Wright
发明人： Clifford O. Morgan, III , Matthew J. Rutten , Erick G. Walton , Terrance M. Wright
IPC分类号： H01L21/302 , C09G1/02 , H01L21/00
CPC分类号： B24B37/26 , C09G1/02
摘要： A method and apparatus for Chemical-Mechanical Polishing of semiconductor wafers using various formulations of high viscosity slurry.
摘要翻译：使用高粘度浆料的各种配方的半导体晶片化学机械抛光的方法和装置。

4. 发明授权

US5312777A Fabrication methods for bidirectional field emission devices and storage structures 失效
标题翻译：双向场发射器件和存储结构的制造方法
公开(公告)号：US5312777A
公开(公告)日：1994-05-17
申请号：US951283
申请日：1992-09-25
申请人： John E. Cronin , Kent E. Morrett , Michael D. Potter , Matthew J. Rutten
发明人： John E. Cronin , Kent E. Morrett , Michael D. Potter , Matthew J. Rutten
IPC分类号： H01J9/02 , H01L21/8242 , H01L27/108 , H01L21/44
CPC分类号： H01L27/10852 , H01J9/025 , H01L27/108 , H01J2201/319
摘要： Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.
摘要翻译：描述了双向场致发射器件（FED）和相关的制造方法。基本装置包括第一单一场发射结构和相邻定位的第二单一场致发射结构。第一单一结构具有第一阴极部分和第一阳极部分，而第二整体结构具有第二阴极部分和第二阳极部分。结构被定位成使得第一阴极部分与第二阳极部分相对，使得电子可以通过场发射流动，并且第二阴极部分与第一阳极部分相反，使得电子可以通过场发射而流动。控制机构定义设备是否有效，而施加到第一和第二单一结构的偏置电压限定电流的方向。存在这种双向FED的多种应用。例如，讨论了FED DRAM单元，以及用于制造各种器件的方法。

5. 发明授权

US5530262A Bidirectional field emission devices, storage structures and fabrication methods 失效
标题翻译：双向场发射装置，存储结构和制造方法
公开(公告)号：US5530262A
公开(公告)日：1996-06-25
申请号：US541763
申请日：1995-05-25
申请人： John E. Cronin , Kent E. Morrett , Michael D. Potter , Matthew J. Rutten
发明人： John E. Cronin , Kent E. Morrett , Michael D. Potter , Matthew J. Rutten
IPC分类号： H01J9/02 , H01L21/8242 , H01L27/108 , H01L29/06
CPC分类号： H01L27/10852 , H01J9/025 , H01L27/108 , H01J2201/319
摘要： Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.
摘要翻译：描述了双向场致发射器件（FED）和相关的制造方法。基本装置包括第一单一场发射结构和相邻定位的第二单一场致发射结构。第一单一结构具有第一阴极部分和第一阳极部分，而第二整体结构具有第二阴极部分和第二阳极部分。结构被定位成使得第一阴极部分与第二阳极部分相对，使得电子可以通过场发射流动，并且第二阴极部分与第一阳极部分相反，使得电子可以通过场发射而流动。控制机构定义设备是否有效，而施加到第一和第二单一结构的偏置电压限定电流的方向。存在这种双向FED的多种应用。例如，讨论了FED DRAM单元，以及用于制造各种器件的方法。

6. 发明授权

US5549511A Variable travel carrier device and method for planarizing semiconductor wafers 失效
标题翻译：用于平面化半导体晶片的可变行进载体装置和方法
公开(公告)号：US5549511A
公开(公告)日：1996-08-27
申请号：US349848
申请日：1994-12-06
申请人： John E. Cronin , Matthew J. Rutten
发明人： John E. Cronin , Matthew J. Rutten
IPC分类号： B24B37/10 , H01L21/304 , B24B7/00 , B24B17/00
CPC分类号： B24B37/105
摘要： A chemical mechanical planarization tool and method are presented employing a non-linear motion of the carrier arm relative to the polishing pad. The non-linear motion of the carrier arm relative to the polishing pad can be accomplished in a variety of ways, for example, employing a mechanical template having an irregular opening or programming the carrier displacement mechanism to move the carrier in an irregular, non-rotational X-Y path over the polishing pad.
摘要翻译：使用载体臂相对于抛光垫的非线性运动来呈现化学机械平面化工具和方法。载体臂相对于抛光垫的非线性运动可以以各种方式实现，例如采用具有不规则开口的机械模板或编程载体位移机构以使载体移动成不规则的非 - 抛光垫上的旋转XY路径。

7. 发明授权

US06245668B1 Sputtered tungsten diffusion barrier for improved interconnect robustness 有权
标题翻译：溅射钨扩散屏障，提高互连鲁棒性
公开(公告)号：US06245668B1
公开(公告)日：2001-06-12
申请号：US09157012
申请日：1998-09-18
申请人： Stephen B. Brodsky , William J. Murphy , Matthew J. Rutten , David C. Strippe , Daniel S. Vanslette
发明人： Stephen B. Brodsky , William J. Murphy , Matthew J. Rutten , David C. Strippe , Daniel S. Vanslette
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , C23C14/564 , H01L21/2855 , H01L21/76876
摘要： A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.
摘要翻译：在金属层之间使用非平行溅射沉积沉积在通孔中的钨膜形成层间接触或通孔的方法。溅射室配置有约1mTorr至约10mTorr的压力，惰性气流至少为25cm 3 / min至约150cm 3 / min。在室内的屏蔽被涂覆有材料，优选氧化铝，其促进钨粘附到屏蔽层上。在沉积钨膜之前可以包括钛的粘附层。非准直的溅射沉积将目标增加到溅射室内的衬底距离; 降低与传统准直溅射相关的加热效应; 并提供更强大的扩散屏障。

8. 发明授权

US5896870A Method of removing slurry particles 失效
标题翻译：去除浆料颗粒的方法
公开(公告)号：US5896870A
公开(公告)日：1999-04-27
申请号：US814675
申请日：1997-03-11
申请人： Cuc K. Huynh , Harold G. Linde , Patricia E. Marmillion , Anthony M. Palagonia , Bernadette A. Pierson , Matthew J. Rutten
发明人： Cuc K. Huynh , Harold G. Linde , Patricia E. Marmillion , Anthony M. Palagonia , Bernadette A. Pierson , Matthew J. Rutten
IPC分类号： H01L21/304 , B24B37/04 , B24B55/12 , C09K3/14 , H01L21/3105 , H01L21/302 , B08B6/00
CPC分类号： B24B55/12 , B24B37/04 , C09K3/1463 , H01L21/31053
摘要： Disclosed is a method and apparatus for polishing a semiconductor wafer. This invention describes a novel in situ method for eliminating residual slurry and slurry abrasive particles on the wafer. A reactant is added to the slurry during the end of the Chemical Mechanical Polish (CMP) process to dissolve the slurry and etch the abrasive particles.
摘要翻译：公开了一种用于抛光半导体晶片的方法和装置。本发明描述了一种用于消除晶片上的残余浆料和浆料磨料颗粒的新颖的原位方法。在化学机械抛光（CMP）工艺结束时，向浆料中加入反应物以溶解浆料并蚀刻磨料颗粒。

9. 发明授权

US06838364B2 Sputtered tungsten diffusion barrier for improved interconnect robustness 有权
标题翻译：溅射钨扩散屏障，提高互连鲁棒性
公开(公告)号：US06838364B2
公开(公告)日：2005-01-04
申请号：US09850816
申请日：2001-05-08
申请人： Stephen B. Brodsky , William J. Murphy , Matthew J. Rutten , David C. Strippe , Daniel S. Vanslette
发明人： Stephen B. Brodsky , William J. Murphy , Matthew J. Rutten , David C. Strippe , Daniel S. Vanslette
IPC分类号： H01L21/28 , C23C14/04 , C23C14/16 , C23C14/56 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , C23C14/564 , H01L21/2855 , H01L21/76876
摘要： A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.
摘要翻译：在金属层之间使用非平行溅射沉积沉积在通孔中的钨膜形成层间接触或通孔的方法。溅射室配置有约1mTorr至约10mTorr的压力，惰性气流为至少25cm 3 / min至约150cm 3 / min。在室内的屏蔽被涂覆有材料，优选氧化铝，其促进钨粘附到屏蔽层上。在沉积钨膜之前可以包括钛的粘附层。非准直的溅射沉积将目标增加到溅射室内的衬底距离; 降低与传统准直溅射相关的加热效应; 并提供更强大的扩散屏障。

10. 发明授权

US06495917B1 Method and structure of column interconnect 有权
标题翻译：列互连的方法和结构
公开(公告)号：US06495917B1
公开(公告)日：2002-12-17
申请号：US09527276
申请日：2000-03-17
申请人： John J. Ellis-Monaghan , Paul M. Feeney , Robert M. Geffken , Howard S. Landis , Rosemary A. Previti-Kelly , Bette L. Bergman Reuter , Matthew J. Rutten , Anthony K. Stamper , Sally J. Yankee
发明人： John J. Ellis-Monaghan , Paul M. Feeney , Robert M. Geffken , Howard S. Landis , Rosemary A. Previti-Kelly , Bette L. Bergman Reuter , Matthew J. Rutten , Anthony K. Stamper , Sally J. Yankee
IPC分类号： H01L2358
CPC分类号： H01L24/12 , H01L21/76801 , H01L21/76835 , H01L23/3171 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/0401 , H01L2224/04042 , H01L2224/05006 , H01L2224/05567 , H01L2224/05624 , H01L2224/13022 , H01L2224/13099 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48724 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/00 , H01L2224/05552 , H01L2224/05556
摘要： A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.
摘要翻译：半导体芯片的方法和结构包括多层互连冶金，互连冶金上的至少一层可变形介电材料，至少一个输入/输出接合焊盘和支撑结构，其包括基本上刚性的电介质与垫的支撑关系，避免破坏可变形电介质材料。

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